SGS Thomson Microelectronics TS271M, TS271ID, TS271IN, TS271I, TS271CN Datasheet

TS271C,I,M

PROGRAMMABLE CMOS

SINGLE OPERATIONAL AMPLIFIERS

October 1997

.

OFFSET NULL CAPABILITY (by external compensation)

.

DYNAMIC CHARACTERISTICS ADJUSTABLEBY I

SET

.

CONSUMPTION CURRENT AND DYNAMIC PARAMETERS ARE STABLE REGARDING THE VOLTAGEPOWER SUPPLY VARIATIONS

.

OUTPUT VOLTAGE CAN SWING TO GROUND

.

VERYLARGE I

SET

RANGE

.

STABLEAND LOW OFFSETVOLTAGE

.

THREE INPUT OFFSETVOLTAGE SELECTIONS

DESCRIPTION

The TS271is a low cost, lowpowersingle operational amplifierdesigned to operate with single or

1

2

3

45

6

7

8

CC

+

-

+

1 - Offset Null 1 2 - InvertingInput 3 - Non-invertingInput 4-V 5 - Offset Null 2 6 - Output 7-V 8-I

CC

SET

PIN CONNECTIONS (top view)

ORDER CODES

Part Number

Temperature

Range

Package

ND

TS271C/AC/BC 0

o

C, +70oC ●● TS271I/AI/BI -40oC, +125oC ●● TS271M/AM/BM -55oC, +125oC ●●

Example : TS271ACN

N

DIP8

(Plastic Package)

D

SO8

(Plastic Micropackage)

dual supplies. This operational amplifier uses the SGS-THOMSONsilicon gate CMOS process giving it an excellent consumption-speedratio. This amplifier is ideallysuited for low consumption applications.

The powersupply is externallyprogrammablewith a resistorconnectedbetweenpins8and4.Itallows to choose the best consumption-speedratio and supply current can be minimizedaccording to the required speed. This device is specified for the followingI

SET

currentvalues: 1.5µA, 25µA,130µA.

This CMOS amplifieroffers very high input impedance and extremelylow input currents.The major advantage versus JFET devices is the very low input currents drift withtemperature(see figure 3).

1/15

MAXIMUMRATINGS

Symbol Parameter Value Unit

V

CC

+

Supply Voltage - (note 1) 18 V

V

id

Differential Input Voltage- (note 2) ±18 V

V

i

Input Voltage - (note 3) -0.3 to 18 V

I

O

Output Current for V

CC

+

≥ 15V ±30 mA

I

in

Input Current ±5mA

T

oper

Operating Free-Air TemperatureRange

TS271C/AC/BC TS271I/AI/BI TS271M/AM/BM

0to+70

-40 to +125

-55 to +125

o

C

T

stg

Storage TemperatureRange -65 to +150

o

C

Notes : 1. All voltage values, except differential voltage, are with respect to network ground terminal.

2. Differential voltages are thenon-inverting input terminal with respect to the invertinginput terminal.

3. The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage.

Iset Input Input

Offset null

E E

Input

differential

Second

stage

Output

stage

Output

CC

V

CC

V

BLOCK DIAGRAM

OPERATINGCONDITIONS

Symbol Parameter Value Unit

V

CC

+

Supply Voltage 3 to 16 V

V

icm

Common Mode Input Voltage Range 0 to V

CC

+

- 1.5 V

TS271C,I,M

2/15

T26

T27

V

CC

V

CC

T28

Input -

T1

T2 Input +

Set Current

T29

T3 T4

C1

R1

T7

T6T5

T8

T11

T12

T10

T13

T9

T14

T16

Output

C2

T15

Offset Null 1

Offset Null 2

SCHEMATIC DIAGRAM

TS271C,I,M

3/15

25k

Ω

V

CC

5

1

8

R

set

OFFSETCOMPENSATION GUARANTEED FOR TS271BCX (I

SET

>25µA),TS271ACX (I

SET

>90µA)

OFFSET VOLTAGENULL CIRCUIT

= +3V = +5V

V

CC

V

CC

= +10V = +16V

V

CC

V

CC

R

set

10k Ω

100k Ω

1M Ω

10M Ω

1

µA 10µA 100µA

I

set

0.1µA

Figure 1 : R

SET

Connectedto V

CC

-

.

V

CC

R

set

V

O

V

CC

V

CC

R

set

V

O

V

CC

R

SET

CONNECTED TO

GROUND

R

SET

CONNECTED TO

V

CC

-

(R

SET

VALUE : SEE

Fig.1)

RESISTOR BIASING

TS271C,I,M

4/15

ELECTRICAL CHARACTERISTICS FOR I

SET

= 1.5µA

V

CC

+

= +10V,V

CC

-

=0V, T

amb

=25oC (unless otherwisespecified)

Symbol Parameter

TS271C/AC/BC

TS271I/AI/BI

TS271M/AM/BM

Unit

Min. Typ. Max. Min. Typ. Max.

V

io

Input Offset Voltage

V

O

= 1.4V,Vic= 0V TS271C/I/M

TS271AC/AI/AM TS271BC/BI/BM

T

min.

≤ T

amb

≤ T

max.

TS271C/I/M TS271AC/AI/AM TS271BC/BI/BM

1.1

0.9

0.25

10

5 2

12

6.5 3

1.1

0.9

0.25

10

5 2

12

6.5

3.5

mV

DV

io

Input Offset VoltageDrift 0.7 0.7 µV/oC

I

io

Input Offset Current - (note 1)

V

ic

=5V,Vo=5V

T

min

. ≤ T

amb

≤ T

max

.

1

100

1

200

pA

I

ib

Input Bias Current - (note 1)

V

ic

=5V,Vo=5V

T

min

. ≤ T

amb

≤ T

max

.

1

150

1

300

pA

V

OH

High Level Output Voltage

V

id

= 100mV,RL=1MΩ

T

min

. ≤ T

amb

≤ T

max

.

8.8

8.7

9 8.8

8.6

9

V

OL

Low Level Output Voltage (Vid= -100mV) 50 50 mV

A

vd

Large Signal VoltageGain

V

o

=1Vto6V,RL=1MΩ,Vic=5V

T

min

. ≤ T

amb

≤ T

max

.

30 20

100 30

20

100

V/mV

GBP Gain Bandwidth Product (A

v

= 40dB,

R

L

=1MΩ,CL= 100pF,fin= 10kHz) 0.1 0.1

MHz

CMR Common Mode Rejection Ratio

V

o

= 1.4V,Vic= 1V to 7.4V 60 80 60 80

dB

SVR Supply Voltage Rejection Ratio

V

CC

+

= 5V to 10V ,Vo= 1.4V 60 80 60 80

dB

I

CC

Supply Current

A

v

= 1, no load, Vo=5V

T

min

. ≤ T

amb

≤ T

max.

10 15

17

10 15

18

µA

I

o

Output Short Circuit Current

V

id

= 100mV, Vo=0V 60 60

mA

I

sink

Output Sink Current

V

id

= -100mV, Vo=V

CC

45 45

mA

SR Slew-Rate at Unity Gain

R

L

=1MΩ,CL= 100pF, Vi= 3 to7V 0.04 0.04

V/µs

∅m Phase Margin at Unity Gain

A

v

= 40dB, RL=1MΩ

C

L

= 10pF

C

L

= 100pF

35 10

Degrees

K

ov

Overshoot Factor

C

L

= 10pF

C

L

= 100pF

40 70

%

e

n

Equivalent Input Noise Voltage

f = 1kHz, R

S

= 100Ω 68 68

nV

√Hz

Note : 1. Maximum values including unavoidable inaccuracies of theindustrial test.

TS271C,I,M

5/15