SGS Thomson Microelectronics TS1220-600B Datasheet
®
FEATURES
I
= 12A
T(RMS)
V
DRM/VRRM
= 600V
IGT < 200µA
HIGH I
= 110A (tp = 10ms)
TSM
DESCRIPTION
TS1220-600B
SENSITIVE SCR
A
A
G
K
The TS1220-600B is us ing a high performance
TOPGLASS PNPN technology and is intended for
DPAK
(Plastic)
applications requiring high surge capability (like
power tools, crowbar protection, capacitive discharge ignition...).
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
V
DRM
V
RRM
I
T(RMS)
Repetitive peak off-state voltage
= 125°C RGK = 220
T
j
RMS on-state current
600 V
Ω
Tc= 105°C12 A
(180° conduction angle)
I
T(AV)
Average on-state current
Tc= 105°C8 A
(180° conduction angle)
I
TSM
Non repetitive surge peak on-state current
(T
initial = 25°C )
j
tp = 10 m s 110 A
tp = 8.3 ms 115
2
I
t
2
I
t Value for fusing
tp = 10 m s 40 A
2
s
dI/dt Critical rate of rise of on-state current
= 10 mA dIG /dt = 0.1 A/µs.
I
G
T
stg
T
j
T
May 1998 - Ed: A3
Storage junction temperature range
Operating junction temperature range
Maximum temperature for soldering dur ing 10s
50 A/µs
- 40 to + 150
- 40 to + 125
260
°
C
°
C
1/5
TS1220-600B
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth(j-c)
Rth(j-a) Junction to ambient (S = 0.5 cm
GATE CHARACTE RIST ICS
P
= 0.2W PGM = 3 W (tp = 20 µs) IGM = 1.2 A (tp = 20 µs)
G (AV)
Junction to case for D.C
(maximum values)
1.5
2
)70
ELECTRICAL CHARACTERI STICS
Symbol Test Conditions Type Value Unit
I
GT
V
GT
V
GD
V
RG
I
H
V
TM
I
DRM
VD=12V RL=140
VD=12V RL=140
VD=12V(DC) RL=33
IRG = 10µA Tj= 25°C MIN 8 V
IT=50mA IG=5mA RGK = 1k
ITM= 24A tp= 380µs Tj= 25°CMAX 1.6 V
VD= V
DRM RGK
Ω
Ω
Ω
= 220
Tj= 25°C MAX 200
Tj= 25°C MAX 0.8 V
Tj= 25°C MAX 0.1 V
Ω
Ω
Tj= 25°C MAX 5 mA
Tj= 25°C MAX 10
°
C/W
°
C/W
µ
A
µ
A
I
RRM
dV/dt V
VR= V
=67%V
D
RGK = 220
RRM
RGK = 220
DRM
ORDERING INFORMATION
TS 12 20 - 600 B
THYRISTOR
SENSITIVE
CURRENT
Ω
Ω
Tj= 125°C MAX 2 mA
Tj= 125°CMIN 5 V/µs
Add "-TR" suffix for Tape and Reel shipment
VOLTAGE
S ENSITIVITY
PACKAGE
B = DPAK
2/5
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