SGS Thomson Microelectronics TIP29A, TIP30C, TIP30A, TIP29C Datasheet
TIP29A/29C
®
COMPLEMENTARY SILICON POWER
■ STMicroelectronics P REFE RRE D
SALESTYPES
■ COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The TIP29A and TIP29C are silicon
Epitaxial-Base NPN power transistors mounted in
Jedec TO-220 plastic package. They are intented
for use in medium power linear and switching
applications.
The complementary PNP types are TIP30A and
TIP30C respectively.
TIP30A/30C
TRANSISTORS
3
2
1
TO-220
INTERNAL SCHEMAT I C DI AGRAM
ABSOLUTE MA XIMU M RAT INGS
Symbol Parameter Value Unit
NPN TIP29A TIP29C
PNP TIP30A TIP30C
V
V
V
I
P
T
For PNP types voltage and current values are negative.
Collector-Base Voltage (IE = 0) 60 100 V
CBO
Collector-Emitter Voltage (IB = 0) 60 100 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
I
Collector Current 1 A
C
Collector Peak Current 3 A
CM
Base Current 0.4 A
I
B
Total Dissipation at T
tot
T
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
case
amb
≤ 25 oC
≤ 25 oC
30
2
W
W
o
C
o
C
January 2000
1/4
TIP29A / TIP29C / TIP30A / TIP30C
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
4.17
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specif ied)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEO
I
CES
I
EBO
V
CEO(sus)
V
CE(sat)
Collector Cut-off
Current (I
= 0)
B
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
= 0)
C
* Collector-Emitter
Sustaining Voltage
(I
= 0)
B
* Collector-Emitter
for TIP29A/30A V
for TIP29C/30C V
for TIP29A/30A V
for TIP29C/30C V
= 5 V 1 mA
V
EB
= 30 mA
I
C
for TIP29A/30A
for TIP29C/30C
= 30 V
CE
= 60 V
CE
= 60
CE
= 100 V
CE
0.3
0.3
0.2
0.2
60
100
IC = 1 A IB = 125 mA 0.7 V
Saturation Voltage
V
* Base-Emitter Voltage IC = 1 A VCE = 4 V 1.3 V
BE(on)
hFE* DC Current Gain IC = 0.2 A VCE = 4 V
I
= 1 A VCE = 4 V
C
h
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
For PNP types voltage and current values are negative.
Small Signal Current
fe
Gain
IC = 0.2 A VCE = 10 V f = 1 KHz
I
= 0.2 A VCE = 10 V f = 1 MHz203
C
40
15 75
mA
mA
mA
mA
V
V
2/4
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