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TIP142T
®
COMPLEMENTARY SILICON POWER
■ STMicroelectronics P REF ERRED
SALESTYPES
■ COMPLEMENTARY PNP - NPN DEVICES
■ MONOLI THIC D A RLING TO N
CONFIGU R ATIO N
■ LOW VOLTAGE
■ HIGH CURRENT
■ HIGH GAI N
APPLICATIONS
■ GENERAL PURPOSE SWITCHING
DESCRIPTION
The TIP142T is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration, mounted in TO-220 plastic
package. It is intented for use in power linear and
switching applications.
The complementary PNP type is TIP147T .
TIP147T
DARLINGTON TRANSISTORS
3
2
1
TO-220
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP142T
PNP TIP147T
V
V
V
I
P
T
For PNP types voltage and current values are negative.
March 2000
Collector-Base Voltage (IE = 0) 100 V
CBO
Collector-Emitter Voltage (IB = 0) 100 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
I
Collector Current 15 A
C
Collector Peak Current (tp < 5ms) 20 A
CM
Base Current 0.5 A
I
B
Total Dissipation at T
tot
Storage Temperature - 65 to 150
stg
T
Max. Operating Junction Temperature 150
j
case
≤ 25 oC
90 W
o
C
o
C
1/4
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TIP142T / TIP147T
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.38
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
* Collector-Emitter
= 100 V 1 mA
V
CB
= 50 V 2 mA
V
CE
= 5 V 2 mA
V
EB
I
= 30 mA 100 V
C
Sustaining Voltage
(I
= 0)
B
V
* Collector-Emitter
CE(sat)
Saturation Voltage
V
* Base-Emitter Voltage IC =10 A VCE = 4 V 3 V
BE(on)
h
* DC Current Gain IC = 5 A VCE = 4 V
FE
IC = 5 A IB = 10 mA
I
= 10 A IB = 40 mA
C
I
= 10 A VCE = 4 V
C
2
3
1000
500
RESISTIVE LOAD
t
t
For PNP types voltage and current values are negative.
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
on
off
Turn-on Time
Turn-off Time
I
= 10 A IB1 = 10 mA
C
= -40 mA RL = 3 Ω
I
B2
0.9
4
V
V
µs
µs
2/4