SGS Thomson Microelectronics TIP137, TIP135, TIP132 Datasheet

TIP132
COMPLEMENTARY SILICON POWER
STMicroelectronicsPREFERRED
SALESTYPES
APPLICATION
LINEARAND SWITCHING INDUSTRIAL
DESCRIPTION
The TIP132 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package.It is intentedfor use in power linearand switchingapplications.
ThecomplementaryPNP type is TIP137 . AlsoTIP135 is aPNP type.
TIP135 TIP137
DARLINGTONTRANSISTORS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
R
Typ. = 5 K R2Typ. = 150
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP132 PNP TIP135 TIP13 7
V V V
I
P
T
* ForPNPtypes voltageand current values are negative.
October 1999
Coll ect o r -B a s e Volt age (IE= 0) 60 100 V
CBO
Coll ect o r -E mit t er Voltage ( IB= 0) 60 100 V
CEO
Emit ter-B ase Voltage (IC=0) 5 V
EBO
Coll ect o r Current 8 A
I
C
Coll ect o r P e ak Cur rent 12 A
CM
Base Current 0.3 A
I
B
Total Dissipation at T
tot
St orage Te mpe r ature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
T
case amb
o
≤ 25
25 oC
C
70
2
W W
o
C
o
C
1/4
TIP132 / TIP135 / TIP137
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Res ist ance J unction-cas e Max Ther mal Res ist ance J unction-amb ien t Max
1.78
63.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unlessotherwisespecified)
(T
case
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
I
CEO
I
CBO
I
EBO
V
CEO(su s)
Collec to r Cut- off Current (I
B
=0)
Collec to r Cut- off Current (I
E
=0)
Emitter Cut-off Current
=0)
(I
C
* Collector-E mitter
Sust aining Vo lt age
=0)
(I
B
V
* Collector-Emitte r
CE(sat)
Sat uration V oltage
V
* Base-Emitter Voltage IC=4A VCE=4V 2.5 V
BE
h
* DC Current Gain IC=1A VCE=4V
FE
Pulsed: Pulse duration= 300 µs, dutycycle 1.5%
For PNP typesvoltage and current values are negative.
V
= Half Rated V
CE
V
=RatedV
CB
V
=5V 5 mA
EB
I
=30mA
C
for TIP 135 for TIP132/TIP137
CEO
CBO
60
100
IC=4A IB=16mA
=6A IB=30mA
I
C
0.5 mA
0.2 mA
2 4
500
=4A VCE=4V
I
C
1000 15000
V V
V V
2/4
PowerDerating CurveSafeOperating Areas
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