SGS Thomson Microelectronics TIP122FP, TIP127FP Datasheet
COMPLEMENTARY SILICON POWER
■ SGS-THOMSONPREFERRED SALESTYPES
■ FULLYMOLDEDISOLATEDPACKAGE
■ 2000V DC ISOLATION(U.L. COMPLIANT)
DESCRIPTION
The TIP122FP is a silicon epitaxial-base NPN
power transistor in monolithic Darlington
configuration Jedec TO-220FP fully molded
isolated package, intented for use in power linear
and switching applications.
The complementaryPNP type is TIP127FP.
TIP122FP
TIP127FP
DARLINGTON TRANSISTORS
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
R1Typ. = 5 KΩ R2Typ. =150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TI P 122 F P
PNP T I P127FP
V
V
V
I
P
T
* For PNP types voltage and current values are negative.
Collect or- B as e Voltage (IE= 0) 100 V
CBO
Collector-Emitter Voltage (IB= 0) 100 V
CEO
Emitter-Base Voltage ( IC=0) 5 V
EBO
Collect or Current 5 A
I
C
Collect or Peak Current 8 A
CM
Base Current 0.1 A
I
B
Tot al Dissipa t ion at T
tot
Storage Temperature -65 t o 150
stg
Max. O per ating J unct ion T emperature 150
T
j
T
case
amb
≤ 25 oC
≤ 25 oC
29
2
W
W
o
C
o
C
April 1998
1/4
TIP122FP / TIP127FP
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistance Ju nct ion-case Max
Ther mal Resistance Ju nct ion-ambient Max
4.3
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
CEO
I
CBO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
B
=0)
Collector Cut-off
Current (I
B
=0)
Emit ter Cut-o f f Current
=0)
(I
C
* Collector-Emitter
=50V 0.5 mA
V
CE
V
=100V 0.2 mA
CE
V
=5V 2 mA
EB
I
= 30 mA 100 V
C
Sust aining Voltage
=0)
(I
B
V
* Collector-Emitter
CE(sat)
Saturation Voltage
V
* Base- Emitt er Voltage IC=3A VCE=3V 2.5 V
BE(on)
h
* DC Current Gain IC=0.5A VCE=3V
FE
* For PNP types voltage and current values are negative.
IC=3A IB=12mA
=5A IB=20mA
I
C
=3A VCE=3V
I
C
1000
1000
2
4
V
V
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