TIP110/112
COMPLEMENTARY SILICON POWER
■ STMicroelectronics PREFERRED
SALESTYPES
■ COMPLEMENTARYPNP - NPN DEVICES
■ MONOLITHICDARLINGTON
CONFIGURATION
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTERDIODE
APPLICATIONS
■ LINEARANDSWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The TIP110 and TIP112 are silicon
Epitaxial-Base NPN transistors in monolithic
Darlington configuration mounted in Jedec
TO-220 plastic package. They are intented for
use in medium power linear and switching
applications.
The complementary PNP types are TIP115 and
TIP117.
TIP115/117
DARLINGTONTRANSISTORS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1Typ.= 7K Ω R2Typ.= 230
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP110 TIP112
PNP TIP115 TIP117
V
V
V
I
P
T
* For PNP types voltageand current valuesare negative
June 1999
Collector-Base Voltag e (IE=0) 60 100 V
CBO
Collect or-Emitter Voltage (IB=0) 60 100 V
CEO
Emitter-Base Voltage (IC=0) 5 V
EBO
Collector Curr en t 2 A
I
C
Collector Peak Current 4 A
CM
Base Current 50 mA
I
B
Tot al D is sip at ion at T
tot
Sto rage Temperature -65 to 150
stg
Max. Operatin g J unction Temperatu r e 150
T
j
T
case
amb
≤ 25oC
≤ 25oC
50
2
W
W
o
C
o
C
1/6
TIP110/TIP112/TIP115/TIP117
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resist ance Junction-case Ma x
Ther mal Resist ance Junction-ambient Max
2.5
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEO
I
CBO
I
EBO
V
CEO(sus)
V
CE(sat)
Collec t or Cut-off
Current (I
B
=0)
Collec t or Cut-off
Current (I
E
=0)
Emitt er Cut-off Current
(I
=0)
C
∗ Collec t or -Emitt er
Sust aining V o lt age
=0)
(I
B
∗ Co llec t or -Emitt er
V
= Half Rated V
CE
V
=RatedV
CB
=5V 2 mA
V
EB
I
=30mA
C
for TIP110/115
for TIP112/117
CEO
CBO
60
100
2mA
1mA
IC=2A IB=8mA 2.5 V
Saturation Voltage
∗ Base-Emi tter Volta ge IC=2A VCE=4V 2.8 V
V
BE
h
∗ DC Cur rent Gain IC=1A VCE=4V
FE
∗
Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
For PNP types voltage and current valuesare negative.
=2A VCE=4V
I
C
1000
500
V
V
Safe OperatingAreas DeratingCurve
2/6
TIP110/TIP112/TIP115/TIP117
DCCurrent Gain (NPNtype)
Collector-Emitter SaturationVoltage (NPN type)
DC Current Gain(PNP type)
Collector-EmitterSaturation Voltage(PNP type)
Base-EmitterSaturationVoltage(NPN type)
Base-EmitterSaturationVoltage (PNP type)
3/6
TIP110/TIP112/TIP115/TIP117
Base-EmitterOn Voltage (NPN type) Base-EmitterOn Voltage(PNP type)
Freewheel DiodeForward Voltage (NPN types) FreewheelDiode Forward Voltage (PNP types)
4/6
TO-220 MECHANICAL DATA
TIP110/TIP112/TIP115/TIP117
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
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TIP110/TIP112/TIP115/TIP117
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