TIP102
COMPLEMENTARY SILICON POWER
■ STMicroelectronics PREFERRED
SALESTYPES
■ COMPLEMENTARY PNP - NPNDEVICES
■ INTEGRATEDANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■ LINEARAND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The TIP102 is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in TO-220 plastic
package.It is intented for use in power linearand
switchingapplications.
ThecomplementaryPNP typeis TIP107.
AlsoTIP105 is a PNP type.
TIP105 TIP107
DARLINGTONTRANSISTORS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1Typ. = 5 KΩ R2Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP102
PNP TIP105 TIP107
V
V
V
I
P
T
* For PNP types voltageand current values are negative.
October 1999
Collec t or -Base Volt age ( IE= 0) 60 100 V
CBO
Collec t or -Emitt er V ol ta ge (IB= 0) 60 100 V
CEO
Emitter-Base Voltage (IC=0) 5 V
EBO
Collector Current 8 A
I
C
Collector Peak Current 15 A
CM
Base Current 1 A
I
B
Tot al Dissipation at T
tot
St orage Tem pe r at ure -65 to 150
stg
Max. Operat ing Junct ion Tem per at ur e 150
T
j
T
case
amb
o
≤ 25
≤ 25 oC
C
80
2
W
W
o
C
o
C
1/4
TIP102 / TIP105 / TIP107
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistanc e Junc t ion- ca se Max
Ther mal Resistanc e Junc t ion- am bie nt Max
1.56
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
I
CEO
I
CBO
I
EBO
V
CEO(su s)
Collect o r Cut- off
Current (I
B
=0)
Collect o r Cut- off
Current (I
E
=0)
Emitter Cut-of f Current
=0)
(I
C
* Col lec tor-Em i tter
Sust aining Voltage
=0)
(I
B
V
* Collect o r- E mi tter
CE(sat)
Sat urat ion Voltage
V
* Base- Em i t t er Volt age IC=8A VCE=4V 2.8 V
BE
h
* DC Current Gain IC=3A VCE=4V
FE
V
*ForwardVoltageof
F
for TIP105 V
for T I P1 02/TI P107 V
for TIP105 V
for T I P1 02/TI P107 V
V
=5V 8 mA
EB
I
=30mA
C
TIP105
for
for T I P1 02/TI P107
=30V
CE
=50V
CE
=60V
CB
=100V
CB
60
100
IC=3A IB=6mA
=8A IB=80mA
I
C
1000
=8A VCE=4V
I
C
I
=-IC=10A 2.8 V
F
200
50
50
50
50
2
2.5
20000
Commutat ion Diode
=0)
(I
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
B
µA
µ
µA
µ
V
V
V
V
A
A
SafeOperating Area
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TO-220 MECHANICAL DATA
TIP102 / TIP105 / TIP107
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
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TIP102 / TIP105 / TIP107
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in thispublication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized foruse as critical components in life support devices or systems without express written approval ofSTMicroelectronics.
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