SGS Thomson Microelectronics TIP107, TIP105, TIP102 Datasheet
TIP102
COMPLEMENTARY SILICON POWER
■ STMicroelectronics PREFERRED
SALESTYPES
■ COMPLEMENTARY PNP - NPNDEVICES
■ INTEGRATEDANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■ LINEARAND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The TIP102 is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in TO-220 plastic
package.It is intented for use in power linearand
switchingapplications.
ThecomplementaryPNP typeis TIP107.
AlsoTIP105 is a PNP type.
TIP105 TIP107
DARLINGTONTRANSISTORS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1Typ. = 5 KΩ R2Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP102
PNP TIP105 TIP107
V
V
V
I
P
T
* For PNP types voltageand current values are negative.
October 1999
Collec t or -Base Volt age ( IE= 0) 60 100 V
CBO
Collec t or -Emitt er V ol ta ge (IB= 0) 60 100 V
CEO
Emitter-Base Voltage (IC=0) 5 V
EBO
Collector Current 8 A
I
C
Collector Peak Current 15 A
CM
Base Current 1 A
I
B
Tot al Dissipation at T
tot
St orage Tem pe r at ure -65 to 150
stg
Max. Operat ing Junct ion Tem per at ur e 150
T
j
T
case
amb
o
≤ 25
≤ 25 oC
C
80
2
W
W
o
C
o
C
1/4
TIP102 / TIP105 / TIP107
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistanc e Junc t ion- ca se Max
Ther mal Resistanc e Junc t ion- am bie nt Max
1.56
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
I
CEO
I
CBO
I
EBO
V
CEO(su s)
Collect o r Cut- off
Current (I
B
=0)
Collect o r Cut- off
Current (I
E
=0)
Emitter Cut-of f Current
=0)
(I
C
* Col lec tor-Em i tter
Sust aining Voltage
=0)
(I
B
V
* Collect o r- E mi tter
CE(sat)
Sat urat ion Voltage
V
* Base- Em i t t er Volt age IC=8A VCE=4V 2.8 V
BE
h
* DC Current Gain IC=3A VCE=4V
FE
V
*ForwardVoltageof
F
for TIP105 V
for T I P1 02/TI P107 V
for TIP105 V
for T I P1 02/TI P107 V
V
=5V 8 mA
EB
I
=30mA
C
TIP105
for
for T I P1 02/TI P107
=30V
CE
=50V
CE
=60V
CB
=100V
CB
60
100
IC=3A IB=6mA
=8A IB=80mA
I
C
1000
=8A VCE=4V
I
C
I
=-IC=10A 2.8 V
F
200
50
50
50
50
2
2.5
20000
Commutat ion Diode
=0)
(I
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
B
µA
µ
µA
µ
V
V
V
V
A
A
SafeOperating Area
2/4
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