SGS Thomson Microelectronics THX15 Datasheet
.OPTIMIZED FOR SSB
.30 MHz
.50 VOLTS
.IMD −30 dB
.COMMON EMITTER
.GOLD METALLIZATION
.P
= 150 W PEP MIN. WITH 14 dB GAIN
OUT
SD1727 (THX15)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
.500 4LFL (M164)
epoxy sealed
ORDER CO DE
SD1727
PIN CONNECTION
BRANDING
THX15
DESCRIPTION
The SD17 27 is a 50 V epitaxial silicon NPN planar
transistor designed primarily for SSB communications. This device utilizes emitter ballasting to
achieve extreme ruggedness under severe operating conditions.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMAL DATA
R
TH(j-c)
Collector-Base Voltage 110 V
Collector-Emitter Voltage 55 V
Emitter-Base Voltage 4.0 V
Device Current 10 A
Power Dissipation 233 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.75 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
November 1992
1/7
SD1727 (THX15)
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
BV
BV
BV
I
I
CBO
CES
CEO
EBO
CEO
CES
h
FE
IC = 100mA IE = 0mA 110 — — V
IC = 100mA VBE = 0V 110 — — V
IC = 100mA IB = 0mA 55 — — V
IE = 10mA IC = 0mA 4.0 — — V
VCE = 30V IE = 0mA — — 5 mA
VCE = 60V IE = 0mA — — 5 mA
VCE = 6V IC = 1.4A 18 — 43.5 —
DYNAMIC
Symbol Test Conditi ons
P
OUT
GP*P
IMD* P
η
c* P
C
OB
Note: The SD1727 i s als o usabl e i n C lass A at 4 0 V. Typ ic al pe rfor mance i s:
f = 30 MHz VCE = 50 V ICQ = 100mA 150 — — W
= 150 W PEP VCE = 50 V ICQ = 100mA 14 — — dB
OUT
= 150 W PEP VCE = 50 V ICQ = 100mA — — −30 dBc
OUT
= 150 W PEP VCE = 50 V ICQ = 100mA 37 — — %
OUT
f = 1 MHz VCB = 50 V — — 220 pF
P
= 30 W PEP, GP = 14 dB, IMD
OUT
* f1 = 30.00 MHz ; f2 = 30.001 MHz
=
−
40dBc
Valu e
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
2/7
TYPICAL PERFORMANCE
INTERMODULATION DISTORTION vs POWER
SD1727 (THX15)
OUTPUT PEP
POWER OUTPUT PEP vs POWER INPUT
COLLECTOR EFFICIENCY vs POWER OUTPUT PEP
3/7
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