SGS Thomson Microelectronics THDT6511D Datasheet
THDT6511D
ApplicationSpecific Discretes
A.S.D.
FEATURES
DUALASYMETRICALTRANSIEN TSUPPR ESSOR
PEAKPULSE CURRENT: I
HOLDINGCURRENT: 150mA min.
BREAKDOWNVOLTAGE: 65V min.
LOWDYNAMICCHARACTERISTICS
STANDCCITT K20 ANDLSSGR
DESCRIPTION
This device has been especially designed to
protectsubscriberline cardsagainst overvoltage.
Two diodes clamp positive overloads while
negativesurges are suppressedby two protection
thyristors.
Aparticularattentionhas beengiven to theinternal
wire bonding. The ”4-point” configuration ensures
a reliable protection, eliminating overvoltages
introduced by the parasitic inductances of the
wiring (Ldi/dt), especially for very fast transient
overvoltages.
= 40A, 10/100µs
PP
TRANSIENT VOLTAGE SUPPRESSOR
FOR SLIC PROTECTION
PRELIMINARY DATASHEET
SO8
SCHEMATIC DIAGRAM
TIP
GND
GND
1
2
3
TIP
8
GND
7
GND
6
COMPLIESWITHTHEFOLLOWINGSTANDAR DS:
CCITTK20 : 10/700µs 1kV
5/310µs 38A
VDE0433 : 10/700µs 2kV
5/310µs 50A
VDE0878 : 1.2/50µs 1.5kV
1/20µs 40A
I3124 :
FCCpart 68 :
BELLCORE
TR-NWT-001089: 2/10µs 2.5kV
(*)with series resistors or PTC.
February 1998 - Ed: 2
0.5/700µs 1kV
0.2/310µs 38A
2/10µs 2.5kV
2/10µs 125A (*)
2/10µs 125A (*)
10/1000µs 1kV
10/1000µs 40A (*)
RING
45
RING
1/6
THDT6511D
ABSOLUTE MAXIMUM RATINGS (T
amb
=25°C)
Symbol Parameter Value Unit
I
PP
I
TSM
I
TSM
T
stg
T
j
T
L
Note 1 : Pulse waveform :
Peak pulsecurrent (see note1) 10/1000µs
5/310µs
2/10µs
Non repetitivesurge peakon-statecurrent
F = 50 Hz
t = 300ms
t=1s
t=5s
40
50
125
10
3.5
1
F = 50 Hz, 60 x 1s, 2 mn betweenpulse 1 A
Storagetemperaturerange
Maximumjunctiontemperature
- 55 to+ 150
150
Maximumleadtemperaturefor solderingduring 10s 260 °C
%I
10/1000µstr=10µst
5/310µst
2/10µst
=5µst
r
=2µst
r
=1000µs
p
=310µs
p
=10µs
p
100
50
0
PP
t
rp
t
t
A
A
°C
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-a)
Junctionto ambient
170 °C/W
ELECTRICAL CHARACTERISTICS
(T
=25°C)
amb
Symbol Parameter
V
RM
I
RM
V
BR
V
BO
I
H
V
F
V
FP
I
BO
I
PP
Stand-offvoltage
Leakagecurrentat stand-offvoltage
Breakdownvoltage
Breakovervoltage
Holdingcurrent
Forward voltagedrop
Peak forwardvoltage
Breakovercurrent
Peak pulsecurrent
VBO
VBR
VRM
I
IF
VF
IRM
IH
IBO
C Capacitance
αT Temperaturecoefficient
Ipp
V
2/6
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