SGS Thomson Microelectronics THD277HI Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronics PREFERRED
SALESTYPE
■ HIGH VOLTAGECAPABILITY
■ U.L.RECOGNISED ISOWATT218PACKAGE
(U.L. FILE # E81734(N)).
APPLICATIONS
■ HORIZONTAL DEFLECTIONFOR COLOUR
TV AND MONITORS
■ SWITCHMODEPOWER SUPPLIES
THD277HI
NPN POWER TRANSISTOR
3
2
1
DESCRIPTION
This device is manufactured using Multiepitaxial
ISOWATT218
Mesa technology for cost-effective high
performance and uses a Hollow Emitter structure
to enhanceswitchingspeeds.
The THD series are designed for use in
horizontal deflection circuits in televisions and
monitors.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
Collector-Base Voltage (IE= 0) 1500 V
CBO
Collector-Emitter V oltage (IB= 0) 700 V
CEO
Emitter-Base Voltage (IC=0) 10 V
EBO
Collect or Current 8 A
I
C
Collect or Peak Cu rr ent (tp<5ms) 15 A
CM
Base Current 5 A
I
B
Base Peak Cu r rent (tp<5ms) 8 A
BM
Total Dis sipati on at Tc=25oC50W
tot
Stora ge Temperat u re -65 t o 150
stg
Max. O perat i ng J unc t i on Temperat u r e 150
T
j
o
C
o
C
December 1999
1/5
THD277HI
THERMAL DATA
R
thj-case
Ther mal Resistance J u nc t io n-c ase Max 2.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Un it
I
CES
I
EBO
V
V
CEO(sus)
Collector Cut- of f
Current (V
Emit ter Cut -off Current
=0)
(I
C
EBO
Emitt er-Base Voltage IE=10mA 10 V
∗ Collector-E mitt er
BE
=0)
V
= 1500 V 200 µA
CE
V
=5V 50 µA
EB
I
= 100 mA 700 V
C
Sust aining Voltage
=0)
(I
B
V
∗ Collector- Emitt er
CE(sat)
IC=4A IB=1A 0.9 V
Sat uration Voltag e
V
BE(sat )
∗ Base-Emitt er
IC=4A IB=1A 1.3 V
Saturation Voltage
∗ DC Cur rent Gain IC=4A VCE=5V
h
FE
t
t
RESI STIVE LO AD
St orage Time
s
t
Fall Time
f
INDUCTI VE LO AD
St orage Time
s
t
Fall Time
f
=4A VCE=5V Tj= 100oC
I
C
VCC=400V IC=4A
=1A IB2=-2A 2.1
I
B1
IC=4A f=15625Hz
=1A IB2=-2A
I
B1
V
ceflyback
= 1050 sin
6
4
140
4.3
π
6
tV
10
10
370
13
3.2
210
µs
ns
µs
ns
INDUCTI VE LO AD
s
t
f
St orage Time
Fall Time
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IC=4A f=31250Hz
I
=1A IB2=-2A
B1
V
ceflyback
= 1050 sin
π
10
10
6
tV
Safe Operating Area ThermalImpedance
4.3
330
µs
ns
2/5
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