SGS Thomson Microelectronics THD218DHI Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronics PREFERRED
SALESTYPE
■ HIGH VOLTAGECAPABILITY
■ U.L.RECOGNISED ISOWATT218PACKAGE
(U.L. FILE # E81734(N))
■ NPNTRANSISTOR WITH INTEGRATED
FREEWHEELINGDIODE.
THD218DHI
NPN POWER TRANSISTOR
APPLICATIONS
■ HORIZONTAL DEFLECTIONFOR COLOUR
TV
DESCRIPTION
This devices is manufacturedusingMultiepitaxial
Mesa technology for cost-effective high
performance and uses a Hollow Emitter structure
to enhanceswitchingspeeds.
The THDseries is designed for use in horizontal
deflectioncircuits in televisionsand monitors.
ABSOLUTE MAXIMUM RATINGS
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
December 1999
Collector-Base Voltage (IE= 0) 1500 V
CBO
Collector-Emitter V oltage (IB= 0) 700 V
CEO
Emitter-Base Voltage (IC=0) 10 V
EBO
Collect or Current 7 A
I
C
Collect or Peak Cu rr ent (tp<5ms) 12 A
CM
Base Current 4 A
I
B
Base Peak Cu r rent (tp<5ms) 7 A
BM
Total Dis sipati on at Tc=25oC50W
tot
Stora ge Temperat u re -65 t o 150
stg
Max. O perat i ng J unc t i on Temperat u r e 150
T
j
o
C
o
C
1/6
THD218DHI
THERMAL DATA
R
thj-case
Ther mal Resistance Junct ion-case Max 2.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Un it
I
I
V
CE(sat)
CES
Collector Cut- of f
Current (V
EBO
Emit ter Cut -off Current
=0)
(I
C
∗ Collector-E mitt er
BE
=0)
V
=1500V
CE
=1500V Tj= 125oC
V
CE
V
=5V 300 mA
EB
0.2
2
IC=4A IB=1A 1.5 V
Saturation Voltage
V
BE(sat )
∗ Base-Emitt er
IC=4A IB=1A 1.3 V
Saturation Voltage
∗ DC Current Gain IC=4A VCE=5V
h
FE
INDUCTI VE LO AD
t
V
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
St orage Time
s
t
Fall Time
f
Diode Forward Voltage IF=4A 2.5 V
F
=4A VCE=5V Tj= 100oC
I
C
IC= 4 A f = 15625 Hz
=1A IB2=-2A
I
B1
V
ceflyback
= 1050 sin
5
3.5
4.7
π
6
tV
10
5
0.48
10
mA
mA
µs
µs
Safe OperatingArea ThermalImpedance
2/6
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