SGS Thomson Microelectronics THD215HI Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronics PREFERRED
SALESTYPE
■ HIGH VOLTAGECAPABILITY
■ U.L.RECOGNISED ISOWATT218PACKAGE
(U.L. FILE # E81734(N)).
APPLICATIONS
■ HORIZONTAL DEFLECTIONFOR COLOUR
TV AND MONITORS
DESCRIPTION
This device is manufactured using Multiepitaxial
Mesa technology for cost-effective high
performance and uses a Hollow Emitter structure
to enhanceswitchingspeeds.
The THDseries is designed for use in horizontal
deflectioncircuits in televisionsand monitors.
THD215HI
NPN POWER TRANSISTOR
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
Collector-Base Voltage (IE= 0) 1500 V
CBO
Collector-Emitter V oltage (IB= 0) 700 V
CEO
Emitter-Base Voltage (IC=0) 10 V
EBO
Collect or Current 10 A
I
C
Collect or Peak Cu rr ent (tp<5ms) 20 A
CM
Base Current 5 A
I
B
Base Peak Cu r rent (tp<5ms) 10 A
BM
Total Dis sipati on at Tc=25oC57W
tot
Stora ge Temperat u re -65 t o 150
stg
Max. O perat i ng J unc t i on Temperat u r e 150
T
j
o
C
o
C
December 1999
1/6
THD215HI
THERMAL DATA
R
thj-case
Ther mal Resistance Junct ion-case Max 2.2
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Un it
I
CEO
I
CES
I
EBO
V
CEO(sus)
Collector Cut- of f
Current (I
B
=0)
Collector Cut- of f
Current (V
BE
=0)
Emit ter Cut -off Current
=0)
(I
C
∗ Co llector- Emitt er
V
=700V 10 µA
CE
V
=1500V 10 µA
CE
V
=5V 100 µA
EB
I
= 100 mA 700 V
C
Sust aining Voltage
=0)
(I
B
V
∗ Collector-E mitt er
CE(sat)
IC=6A IB= 1.2 A 1.3 V
Saturation Voltage
V
BE(sat )
∗ Base-Emitt er
IC=6A IB= 1.2 A 1.3 V
Saturation Voltage
∗ DC Cur rent Gain IC=10mA VCE=5V
h
FE
INDUCTI VE LO AD
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
s
t
f
St orage Time
Fall Time
I
=6A VCE=5V
C
=6A VCE=5V Tj= 125oC
I
C
IC=4.5A f=64KHz
=1.5A IB2=-2.4A
I
B1
V
ceflyback
= 1100 sin
π
6
tV
10
5
10
6
13
4
3.3
160
µs
ns
Safe OperatingArea ThermalImpedance
2/6
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