SGS Thomson Microelectronics THD200FI Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronics PREFERRED
SALESTYPE
■ HIGH VOLTAGECAPABILITY
■ VERYHIGH SWITCHING SPEED
■ U.L.RECOGNISED ISOWATT218PACKAGE
(U.L. FILE # E81734(N))
THD200FI
NPN POWER TRANSISTOR
APPLICATIONS:
■ HORIZONTAL DEFLECTIONFOR
MONITORS
DESCRIPTION
The THD200FI is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structureto enhance switching speeds.
The THDseries is designed for use in horizontal
deflectioncircuits in televisionsand monitors.
ABSOLUTE MAXIMUM RATINGS
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
December 1999
Collector-Base Voltage (IE= 0) 1500 V
CBO
Collector-Emitter V oltage (IB= 0) 700 V
CEO
Emitter-Base Voltage (IC=0) 10 V
EBO
Collect or Current 10 A
I
C
Collect or Peak Cu rr ent ( tp<5ms) 20 A
CM
Base Current 5 A
I
B
Base Peak Cu r rent (tp<5ms) 10 A
BM
Total Dis sipation at Tc=25oC57W
tot
Stora ge Temper at u re -65 t o 150
stg
Max. O perating Junct i on T em per at u r e 150
T
j
o
C
o
C
1/7
THD200FI
THERMAL DATA
R
thj-case
Ther mal Resistance Junc t io n- case Max 2.2
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
CES
I
EBO
V
CEO(sus )
Collector Cut -off
Current (V
BE
=0)
Emit ter Cut- o f f Curr ent
=0)
(I
C
∗ Co llector-Emit t er
V
=1500V
CE
=1500V Tj= 125oC
V
CE
V
=5V 100 µA
EB
I
= 100 mA 700 V
C
0.2
2
Sust aining Voltage
=0)
(I
C
V
V
CE(sat)
EBO
Emitt er-Base Voltage
=0)
(I
B
∗ Collector- E mitter
I
=10mA 10 V
E
IC=7A IB= 1.5 A 1.5 V
Saturation Voltage
V
BE(sat)
∗ Base-Emitt er
IC=7A IB= 1.5 A 1.3 V
Saturation Voltage
∗ DC Cur rent Gain IC=7A VCE=5V
h
FE
t
t
RESI STIVE LO AD
St orage Time
s
t
Fall Time
f
INDUCTIVE LO A D
St orage Time
s
t
Fall Time
f
=7A VCE=5V Tj=100oC
I
C
VCC=400V IC=7A
=1.5A IB2= 3.5 A 2.1
I
B1
IC= 7 A f = 31250 Hz
=1.5A IB2=-3.5A
I
B1
V
ceflyback
= 1200 sin
6.5
4
140
3.5
π
6
tV
10
5
320
13
3.1
210
mA
mA
µs
ns
µs
ns
INDUCTIVE LO A D
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
s
t
f
St orage Time
Fall Time
2/7
IC=7A f=64KHz
=1.5A IB2=-3.5A
I
B1
π
V
ceflyback
= 1200 sin
10
5
6
tV
1.7
215
µs
ns
THD200FI
Safe OperatingArea
Derating Curve
Thermal Impedance
DC Current Gain
CollectorEmitter SaturationVoltage
BaseEmitter Saturation Voltage
3/7
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