SGS Thomson Microelectronics THBT7011D Datasheet



THBT7011D

ApplicationSpecific Discretes

A.S.D.

FEATURES

BIDIRECTIONALCROWBARPROTECTION.
PEAKPULSECURRENT:

=30Afor 10/1000µs surge.

I

PP

HOLDINGCURRENT:

I

= 150mA.

H

BREAKDOWNVOLTAGE:70VMin.
LOW DYNAMICBREAKOVERVOLTAGE.

DESCRIPTION

Dedicated to telecommunication equipment
protection,thisdeviceprovidesa dualbidirectional
protectionfunction.

Dynamic characteristics have been defined for
severaltypesof surges,in order to meet the SLIC
maximumratings.

DUAL OVERVOLTAGE

PROTECTION FOR TELECOM LINE

SO-8

FUNCTIONAL DIAGRAM

T

R

TM: ASD is trademarksof STMicroelectronics.

January 1999 - Ed: 5C

G

PINOUTCONFIGURATION

T
NC
NC

R

G

G
G

G

1/8

THBT7011D

COMPLIESWITH THE

FOLLOWING STANDARDS:

Peak Surge

Voltage

(V)

Voltage

Waveform

(µs)

Current

Waveform

(µs)

Admissible

Ipp

(A)

Necessary

Resistor

(Ω)

CCITTK20 4000 10/700 5/310 25 ­VDE0433 4000 10/700 5/310 40 10
VDE0878 4000 1.2/50 1/20 50 ­IEC-1000-4-5

FCCPart68, lightningsurge
typeA

FCCPart68, lightningsurge

level4
level4

1500

800

10/700

1.2/50

10/160
10/560

5/310

8/20

10/160
10/560

25
50

47
35

100 9/720 5/320 25 -

15.5

typeB
BELLCORETR-NWT-001089

Firstlevel
BELLCORETR-NWT-001089

2500
1000

2/10

10/1000

2/10

10/1000

90
30

5000 2/10 2/10 90 50

Secondlevel
CNETl31-24

ABSOLUTE MAXIMUM RATINGS

4000 0.5/700 0.8/310 25 -

=25°C)

(T

amb

Symbol Parameter Value Unit

-

-

25

23
24

I

PP

I

TSM

Peak pulsecurrent (seenote1) 10/1000µs30 A
Non repetitivesurge peak on-statecurrent

(F=50Hz)

T

stg

T

j

T

L

Note 1 : Pulsewaveform :

Storagetemperaturerange
Maximumoperatingjunctiontemperature

Maximumleadtemperature forsolderingduring 10s 260 °C

10/1000µst

%I

100

50

0

=10µst

r

PP

t

r

tp = 100ms

t=1s

=1000µs

p

t

p

t

Itsm ( A )

30

25

20

15

10

5

0

50 100 200 500 1 000 2 000

t ( ms )

15.5
9

- 40 to+ 150
+ 150

A

°C
°C

F=50Hz
Tj initial=+25°C

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THBT7011D

TESTCIRCUITS FORI

PP

Transversal mode

See test
circuit 3

TIP or

RING

I

PP

R

P

THBT

GND

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th (j-a)

ELECTRICALCHARACTERISTICS

Symbol Parameter

V

RM

I

RM

V

R

V

BR

V

BO

I

H

I

BO

I

PP

C Capacitance

Junctionto ambient

=25°C)

(T

amb

Stand-offvoltage
Leakagecurrent at stand-offvoltage
ContinuousReversevoltage
Breakdownvoltage
Breakovervoltage
Holdingcurrent
Breakovercurrent
Peakpulse current

170 °C/W

I

I

PP

I

BO

I

H

I

R

V

VRMV

R

BR

V

V

BO

STATICPARAMETERS BETWEENTIPAND GND,RINGANDGND

Type I

max. max.

@V

RM

AV

µ

RM

IR@V

R

note1

AV VmAmAmApF

µ

VBO@I

max.

note2

BO

I

H

min. max. min

note 3

THBT7011D 5 66 50 70 89 50 400 150 80

C

max

note4

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