THBT7011D
ApplicationSpecific Discretes
A.S.D.
FEATURES
BIDIRECTIONALCROWBARPROTECTION.
PEAKPULSECURRENT:
=30Afor 10/1000µs surge.
I
PP
HOLDINGCURRENT:
I
= 150mA.
H
BREAKDOWNVOLTAGE:70VMin.
LOW DYNAMICBREAKOVERVOLTAGE.
DESCRIPTION
Dedicated to telecommunication equipment
protection,thisdeviceprovidesa dualbidirectional
protectionfunction.
Dynamic characteristics have been defined for
severaltypesof surges,in order to meet the SLIC
maximumratings.
DUAL OVERVOLTAGE
PROTECTION FOR TELECOM LINE
SO-8
FUNCTIONAL DIAGRAM
T
R
TM: ASD is trademarksof STMicroelectronics.
January 1999 - Ed: 5C
G
PINOUTCONFIGURATION
T
NC
NC
R
G
G
G
G
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THBT7011D
COMPLIESWITH THE
FOLLOWING STANDARDS:
Peak Surge
Voltage
(V)
Voltage
Waveform
(µs)
Current
Waveform
(µs)
Admissible
Ipp
(A)
Necessary
Resistor
(Ω)
CCITTK20 4000 10/700 5/310 25 VDE0433 4000 10/700 5/310 40 10
VDE0878 4000 1.2/50 1/20 50 IEC-1000-4-5
FCCPart68, lightningsurge
typeA
FCCPart68, lightningsurge
level4
level4
1500
800
10/700
1.2/50
10/160
10/560
5/310
8/20
10/160
10/560
25
50
47
35
100 9/720 5/320 25 -
15.5
typeB
BELLCORETR-NWT-001089
Firstlevel
BELLCORETR-NWT-001089
2500
1000
2/10
10/1000
2/10
10/1000
90
30
5000 2/10 2/10 90 50
Secondlevel
CNETl31-24
ABSOLUTE MAXIMUM RATINGS
4000 0.5/700 0.8/310 25 -
=25°C)
(T
amb
Symbol Parameter Value Unit
-
-
25
23
24
I
PP
I
TSM
Peak pulsecurrent (seenote1) 10/1000µs30 A
Non repetitivesurge peak on-statecurrent
(F=50Hz)
T
stg
T
j
T
L
Note 1 : Pulsewaveform :
Storagetemperaturerange
Maximumoperatingjunctiontemperature
Maximumleadtemperature forsolderingduring 10s 260 °C
10/1000µst
%I
100
50
0
=10µst
r
PP
t
r
tp = 100ms
t=1s
=1000µs
p
t
p
t
Itsm ( A )
30
25
20
15
10
5
0
50 100 200 500 1 000 2 000
t ( ms )
15.5
9
- 40 to+ 150
+ 150
A
°C
°C
F=50Hz
Tj initial=+25°C
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THBT7011D
TESTCIRCUITS FORI
PP
Transversal mode
See test
circuit 3
TIP or
RING
I
PP
R
P
THBT
GND
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-a)
ELECTRICALCHARACTERISTICS
Symbol Parameter
V
RM
I
RM
V
R
V
BR
V
BO
I
H
I
BO
I
PP
C Capacitance
Junctionto ambient
=25°C)
(T
amb
Stand-offvoltage
Leakagecurrent at stand-offvoltage
ContinuousReversevoltage
Breakdownvoltage
Breakovervoltage
Holdingcurrent
Breakovercurrent
Peakpulse current
170 °C/W
I
I
PP
I
BO
I
H
I
R
V
VRMV
R
BR
V
V
BO
STATICPARAMETERS BETWEENTIPAND GND,RINGANDGND
Type I
max. max.
@V
RM
AV
µ
RM
IR@V
R
note1
AV VmAmAmApF
µ
VBO@I
max.
note2
BO
I
H
min. max. min
note 3
THBT7011D 5 66 50 70 89 50 400 150 80
C
max
note4
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