SGS Thomson Microelectronics THBT7011D Datasheet

THBT7011D
ApplicationSpecific Discretes
A.S.D.
FEATURES
BIDIRECTIONALCROWBARPROTECTION. PEAKPULSECURRENT:
I
PP
HOLDINGCURRENT:
I
= 150mA.
H
BREAKDOWNVOLTAGE:70VMin. LOW DYNAMICBREAKOVERVOLTAGE.
DESCRIPTION
Dedicated to telecommunication equipment protection,thisdeviceprovidesa dualbidirectional protectionfunction.
Dynamic characteristics have been defined for severaltypesof surges,in order to meet the SLIC maximumratings.
DUAL OVERVOLTAGE
PROTECTION FOR TELECOM LINE
SO-8
FUNCTIONAL DIAGRAM
T
R
TM: ASD is trademarksof STMicroelectronics.
January 1999 - Ed: 5C
G
PINOUTCONFIGURATION
T NC NC
R
G
G G
G
1/8
THBT7011D
COMPLIESWITH THE
FOLLOWING STANDARDS:
Peak Surge
Voltage
(V)
Voltage
Waveform
(µs)
Current
Waveform
(µs)
Admissible
Ipp
(A)
Necessary
Resistor
(Ω)
CCITTK20 4000 10/700 5/310 25 ­VDE0433 4000 10/700 5/310 40 10 VDE0878 4000 1.2/50 1/20 50 ­IEC-1000-4-5
FCCPart68, lightningsurge typeA
FCCPart68, lightningsurge
level4 level4
1500
800
10/700
1.2/50
10/160 10/560
5/310
8/20
10/160 10/560
25 50
47 35
100 9/720 5/320 25 -
15.5
typeB BELLCORETR-NWT-001089
Firstlevel BELLCORETR-NWT-001089
2500 1000
2/10
10/1000
2/10
10/1000
90 30
5000 2/10 2/10 90 50
Secondlevel CNETl31-24
ABSOLUTE MAXIMUM RATINGS
4000 0.5/700 0.8/310 25 -
=25°C)
(T
amb
Symbol Parameter Value Unit
-
-
25
23 24
I
PP
I
TSM
Peak pulsecurrent (seenote1) 10/1000µs30 A Non repetitivesurge peak on-statecurrent
(F=50Hz)
T
stg
T
j
T
L
Note 1 : Pulsewaveform :
Storagetemperaturerange Maximumoperatingjunctiontemperature
Maximumleadtemperature forsolderingduring 10s 260 °C
10/1000µst
%I
100
50
0
=10µst
r
PP
t
r
tp = 100ms
t=1s
=1000µs
p
t
p
t
Itsm ( A )
30
25
20
15
10
5
0
50 100 200 500 1 000 2 000
t ( ms )
15.5 9
- 40 to+ 150 + 150
A
°C °C
F=50Hz Tj initial=+25°C
2/8
THBT7011D
TESTCIRCUITS FORI
PP
Transversal mode
See test circuit 3
TIP or
RING
I
PP
R
P
THBT
GND
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-a)
ELECTRICALCHARACTERISTICS
Symbol Parameter
V
RM
I
RM
V
R
V
BR
V
BO
I
H
I
BO
I
PP
C Capacitance
Junctionto ambient
=25°C)
(T
amb
Stand-offvoltage Leakagecurrent at stand-offvoltage ContinuousReversevoltage Breakdownvoltage Breakovervoltage Holdingcurrent Breakovercurrent Peakpulse current
170 °C/W
I
I
PP
I
BO
I
H
I
R
V
VRMV
R
BR
V
V
BO
STATICPARAMETERS BETWEENTIPAND GND,RINGANDGND
Type I
max. max.
@V
RM
AV
µ
RM
IR@V
R
note1
AV VmAmAmApF
µ
VBO@I
max.
note2
BO
I
H
min. max. min
note 3
THBT7011D 5 66 50 70 89 50 400 150 80
C
max
note4
3/8
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