SGS Thomson Microelectronics THBT200S1 Datasheet

THBT200S1
ApplicationSpecific Discretes
A.S.D.
FEATURES
DUALBIDIRECTIONAL CROWBAR PROTECTION.
= 35 A, 10/1000 µs.
-I
PP
HOLDINGCURRENT= 150mAmin BREAKDOWNVOLTAGE= 200 V min. BREAKOVERVOLTAGE= 290V max. MONOLITHICDEVICE.
DESCRIPTION
This monolithic protection device has been espe­ciallydesignedto protectsubscriberlinecards.The THBT200Sdeviceis particularlysuitableto protect ring generator relay against transient overvol­tages.
TRANSIENT VOLTAGE SUPPRESSOR
FOR SLIC PROTECTION
SIP3
COMPLIESWITHTHE FOLLOWINGSTANDAR DS: CCITTK20 :
10/700µs 1kV 5/310µs 25A
VDE0433 : 10/700µs 2kV
µs 45A(*)
5/310
VDE0878 : 1.2/50
µs 1.5kV
1/20 µs 40A
FCCpart 68 : 2/10 µs 2.5kV
2/20µs 80A(*)
BELLCORE TR-NWT-001089: 2/10 µs 2.5kV
2/10µs 80A 10/1000µs 1kV 10/1000µs 35A(*)
(*)with series resistors or PTC.
TM: ASD istrademarks of SGS-THOMSON Microelectronics.
February 1998 Ed:2
SCHEMATICDIAGRAM
NC
Tip
GND
Ring
1
2
3
4
1/7
THBT200S1
ABSOLUTE MAXIMUMRATINGS(T
amb
=25°C)
Symbol Parameter Value Unit
I
I
TSM
T
T
T
Note 1 : Pulse waveform :
Peak pulsecurrent (see note 1)
PP
10/1000
8/20 2/10
µs µs
µs
35 70
80 Non repetitivesurge peakon-state current tp= 20ms 20 A Storageand operatingjunction temperaturerange
stg
Maximumjunctiontemperature
j
Maximumlead temperaturefor solderingduring 10s 230 °C
L
%I
10/1000µstr=10µst 5/310µst 2/10µst
=5µst
r
=2µst
r
=1000µs
p
=310µs
p
=10µs
p
PP
100
50
0
t
rp
- 40 to + 150 + 150
t
THERMAL RESISTANCE
A
°C
t
Symbol Parameter Value Unit
R
th (j-a)
Junctionto ambient 80 °C/W
2/7
THBT200S1
ELECTRICAL CHARACTERISTICS
Symbol Parameter
V
I
RM
V V
I
I
BO
I
PP
Stand-offvoltage
RM
Leakagecurrentat V Continuousreverse voltage
BR
Breakovervoltage
BO
Holdingcurrent
H
Breakovercurrent Peakpulse current
RM
(T
amb
=25°C)
I
I
BO
IRM
I
pp
I
H
V
RM
C Capacitance
1 - PARAMETERSRELATED TO ONE TRISIL.(BetweenTIP and GNDor RINGand GND)
I
RM
@V
RM
VBR@I
R
V
BO @IBO
I
H
VBR
V
V
BO
C
max. min. max. min. max. min. max.
note1 note2 note 3
µA V V mA V mA mA mA pF
10 180 200 1 290 150 800 150 200
Note 1 : See reference test circuit 1 for IH,IBOand VBOparameters. Note 2 : See test circuit 2. Note 3 : VR= 1V, F = 1MHz.
2 - PARAMETERSRELATED TO TIPand RING TRISIL.
I
RM
@V
RM
C
max. max.
µAVpF
10 180 200
3/7
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