SGS Thomson Microelectronics THBT200S1 Datasheet
THBT200S1
ApplicationSpecific Discretes
A.S.D.
FEATURES
DUALBIDIRECTIONAL CROWBAR
PROTECTION.
PEAK PULSECURRENT :
= 35 A, 10/1000 µs.
-I
PP
HOLDINGCURRENT= 150mAmin
BREAKDOWNVOLTAGE= 200 V min.
BREAKOVERVOLTAGE= 290V max.
MONOLITHICDEVICE.
DESCRIPTION
This monolithic protection device has been especiallydesignedto protectsubscriberlinecards.The
THBT200Sdeviceis particularlysuitableto protect
ring generator relay against transient overvoltages.
TRANSIENT VOLTAGE SUPPRESSOR
FOR SLIC PROTECTION
SIP3
COMPLIESWITHTHE FOLLOWINGSTANDAR DS:
CCITTK20 :
10/700µs 1kV
5/310µs 25A
VDE0433 : 10/700µs 2kV
µs 45A(*)
5/310
VDE0878 : 1.2/50
µs 1.5kV
1/20 µs 40A
FCCpart 68 : 2/10 µs 2.5kV
2/20µs 80A(*)
BELLCORE
TR-NWT-001089: 2/10 µs 2.5kV
2/10µs 80A
10/1000µs 1kV
10/1000µs 35A(*)
(*)with series resistors or PTC.
TM: ASD istrademarks of SGS-THOMSON Microelectronics.
February 1998 Ed:2
SCHEMATICDIAGRAM
NC
Tip
GND
Ring
1
2
3
4
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THBT200S1
ABSOLUTE MAXIMUMRATINGS(T
amb
=25°C)
Symbol Parameter Value Unit
I
I
TSM
T
T
T
Note 1 : Pulse waveform :
Peak pulsecurrent (see note 1)
PP
10/1000
8/20
2/10
µs
µs
µs
35
70
80
Non repetitivesurge peakon-state current tp= 20ms 20 A
Storageand operatingjunction temperaturerange
stg
Maximumjunctiontemperature
j
Maximumlead temperaturefor solderingduring 10s 230 °C
L
%I
10/1000µstr=10µst
5/310µst
2/10µst
=5µst
r
=2µst
r
=1000µs
p
=310µs
p
=10µs
p
PP
100
50
0
t
rp
- 40 to + 150
+ 150
t
THERMAL RESISTANCE
A
°C
t
Symbol Parameter Value Unit
R
th (j-a)
Junctionto ambient 80 °C/W
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THBT200S1
ELECTRICAL CHARACTERISTICS
Symbol Parameter
V
I
RM
V
V
I
I
BO
I
PP
Stand-offvoltage
RM
Leakagecurrentat V
Continuousreverse voltage
BR
Breakovervoltage
BO
Holdingcurrent
H
Breakovercurrent
Peakpulse current
RM
(T
amb
=25°C)
I
I
BO
IRM
I
pp
I
H
V
RM
C Capacitance
1 - PARAMETERSRELATED TO ONE TRISIL.(BetweenTIP and GNDor RINGand GND)
I
RM
@V
RM
VBR@I
R
V
BO @IBO
I
H
VBR
V
V
BO
C
max. min. max. min. max. min. max.
note1 note2 note 3
µA V V mA V mA mA mA pF
10 180 200 1 290 150 800 150 200
Note 1 : See reference test circuit 1 for IH,IBOand VBOparameters.
Note 2 : See test circuit 2.
Note 3 : VR= 1V, F = 1MHz.
2 - PARAMETERSRELATED TO
TIPand RING TRISIL.
I
RM
@V
RM
C
max. max.
µAVpF
10 180 200
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