SGS Thomson Microelectronics THBT200S Datasheet
THBT200S
ApplicationSpecific Discretes
A.S.D.
FEATURES
DUALBIDIRECTION ALCROWBARPROTECTION.
PEAK PULSECURRENT :
-I
= 75 A, 10/1000 µs.
PP
HOLDINGCURRENT = 150 mA min
BREAKDOWNVOLTAGE=200Vmin.
BREAKOVERVOLTAGE= 290V max.
MONOLITHICDEVICE.
DESCRIPTION
This monolithic protection device has been especiallydesignedto protectsubscriberline cards.The
THBT200 device is particularly suitable to protect
ring generator relay against transient overvoltages.
TRANSIENT VOLTAGE SUPPRESSOR
FOR SLIC PROTECTION
SIP3
COMPLIESWITHTHE FOLLOWINGSTANDARDS:
CCITTK20:
10/700µs 1kV
5/310µs 25A
VDE0433: 10/700µs 2kV
µs 50A
5/310
VDE0878: 1.2/50
µs 1.5kV
1/20 µs 40A
FCCpart68 : 2/10 µs 2.5kV
2/20µs 225A(*)
BELLCORE
TR-NWT-001089: 2/10 µs 2.5kV
2/10µs 225A(*)
10/1000µs 1kV
10/1000µs 75A(*)
(*)with series resistorsor PTC.
TM: ASDis trademarks of SGS-THOMSON Microelectronics.
February 1998 Ed:2
SCHEMATICDIAGRAM
NC
Tip
GND
Ring
1
2
3
4
1/7
THBT200S
ABSOLUTE MAXIMUM RATINGS(T
amb
=25°C)
Symbol Parameter Value Unit
I
PP
I
TSM
Peakpulse current(see note 1) 10/1000 µs
µs
5/310
µs
8/20
2/10
µs
Nonrepetitivesurge peak on-statecurrent
tp= 20ms 30 A
75
125
150
225
(F= 50Hz)
T
T
T
Note 1: Pulse waveform:
Storagetemperaturerange
stg
Maximumjunction temperature
j
Maximumlead temperatureforsolderingduring 10s 230 °C
L
10/1000µstr=10µst
5/310µst
2/10µst
=1000µs
=5µst
r
=2µst
r
p
=310µs
p
=10µs
p
%I
100
50
0
PP
t
rp
- 40 to + 150
150
t
°C
A
t
THERMAL RESISTANCE
Symbol Parameter Value Unit
R
th (j-a)
Junctionto ambient 80 °C/W
2/7
THBT200S
ELECTRICALCHARACTERISTICS
Symbol Parameter
V
I
RM
V
V
I
I
BO
I
PP
Stand-offvoltage
RM
Leakagecurrent at V
Continuousreversevoltage
BR
Breakovervoltage
BO
Holdingcurrent
H
Breakovercurrent
Peakpulse current
RM
(T
amb
=25°C).
I
I
pp
I
BO
I
H
I
RM
V
RMVBR
C Capacitance
PARAMETERS RELATEDTO ONE TRISIL(BetweenTIPandGNDorRINGand GND)
@V
I
RM
RM
VBR@I
R
V
BO @IBO
I
H
V
V
BO
C
max. min. max. min. max. min. max.
note1 note2 note 3
A V V mA V mA mA mA pF
µ
10 180 200 1 290 150 800 150 200
Note 1: See referencetest circuit 1 for IBOandVBOparameters.
Note 2: See testcircuit 2.
Note 3:VR=1V, F =1MHz.
3/7
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