SGS Thomson Microelectronics THBT27011D, THBT20011D, THBT16011D, THBT15011D Datasheet
THBTxxx11D
ApplicationSpecific Discretes
A.S.D.
FEATURES
BIDIRECTIONALCROWBARPROTECTION
BETWEENTIP AND GND, RINGANDGND
ANDBETWEENTIP AND RING.
PEAKPULSECURRENT:
=30Afor 10/1000µs surge.
I
PP
HOLDINGCURRENT:
I
= 150mA.
H
AVAILABLEIN SO8 PACKAGES.
LOW DYNAMICBREAKOVERVOLTAGE.
DESCRIPTION
Dedicated to telecommunication equipment
protection, these devices provide a triple
bidirectionalprotection function.
They ensure the same protection capability with
the same breakdown voltage both in longitudinal
modeandtransversalmode.
A particularattentionhas beengiven to theinternal
wire bonding.The ”4-point”configurationensures
a reliable protection, eliminating overvoltages
introduced by the parasitic inductances of the
wiring (Ldi/dt), especially for very fast transient
overvoltages.
Dynamic characteristics have been defined for
several types of surges, in order to meetthe SLIC
maximumratings.
TRIPOLAR OVERVOLTAGE
PROTECTION FOR TELECOM LINE
SO8
SCHEMATIC DIAGRAM
TIP
GND
GND
1
2
3
8 TIP
GND
7
GND
6
COMPLIESWITHTHEFOLLOWINGSTANDARDS:
CCITTK20: 10/700µs 1.5kV
5/310µs 20A(*)
VDE0433:
VDE0878:
CNET: 0.5/700µs 1.5kV
FCCpart68 : 2/10µs 2.5kV
BELLCORE
TR-NWT-001089:
(*)With series resistors or PTC.
September 1998 - Ed: 5A
10/700µs 2kV
5/310µs 20A(*)
1.2/50µs 1.5kV
1/20µs 20A(*)
0.2/310µs 20A(*)
2/10µs 40A(*)
2/10µs 2.5kV
2/10µs 40A(*)
RING
TM: ASDis trademarks ofSGS-THOMSON Microelectronics.
4
5
RING
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THBTxxx11D
ABSOLUTE MAXIMUM RATINGS
(T
amb
=25°C)
Symbol Parameter Value Unit
I
PP
I
TSM
T
stg
T
j
T
L
Note 1 : Pulsewaveform :
Peak pulsecurrent (seenote 1) 10/1000µs30 A
Non repetitivesurge peak on-statecurrent
(F=50Hz)
Storagetemperaturerange
Maximumoperatingjunctiontemperature
tp= 10 ms
t=1s
8
3.5
- 40 to+ 150
+ 150
Maximumleadtemperature forsolderingduring 10s 260 °C
10/1000µst
%I
100
50
0
=10µst
r
PP
t
r
=1000µs
p
t
p
t
A
°C
°C
TESTCIRCUITS FORI
PP
Longitudinal mode
TIP
R
/2
I
See test
circuit 3
RING
PP
/2
I
PP
P
R
P
THBT
GND
Transversalmode
See test
circuit 3
TIP or
RING
I
PP
R
P
THBT
GND
THERMALRESISTANCES
Symbol Parameter Value Unit
R
th (j-a)
Junctionto ambient 170 °C/W
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THBTxxx11D
ELECTRICALCHARACTERISTICS(T
Symbol Parameter
V
RM
I
RM
V
V
BR
V
BO
I
H
I
BO
V
I
PP
Stand-offvoltage
Leakagecurrent at stand-offvoltage
ContinuousReverse voltage
R
Breakdownvoltage
Breakovervoltage
Holdingcurrent
Breakovercurrent
Forwardvoltagedrop
F
Peak pulsecurrent
amb
=25°C)
I
I
PP
I
BO
I
H
I
R
V
V
RM
BR
C Capacitance
STATICPARAMETERS
Type I
THBT15011D
@V
RM
RM
max. max.
µAVµA V V mAmAmA pF
IR@V
note1
R
VBO@I
max.
note 2
BO
I
H
min. max. min
note 3
note4
5 135 50 150 210 50 400 150 80
THBT16011D 5 135 50 160 230 50 400 150 80
THBT20011D 5 180 50 200 290 50 400 150 80
THBT27011D 5 240 50 270 380 50 400 150 80
Note 1: IRmesuared at VRguaranteesVBR>V
Note 2: Measured at 50Hz (1 cycle) test circuit1.
Note 3: See thereference test circuit 2.
Note 4: V
= 1V,F =1MHz.
R
R
V
V
BO
C
max
DYNAMICBREAKOVERVOLTAGES(Transversalmode)
Type Symbol Testconditions
THBT15011D V
BO
10/700µs 1.5kV Rp=10Ω IPP=30A
1.2/50µs 1.5kV R
2/10µs 2.5kV R
THBT16011D V
BO
10/700µs 1.5kV Rp=10Ω IPP=30A
1.2/50µs 1.5kV R
2/10µs 2.5kV R
THBT20011D V
BO
10/700µs 1.5kV Rp=10Ω IPP=30A
1.2/50µs 1.5kV R
2/10µs 2.5kV R
THBT27011D V
BO
10/700µs 1.5kV Rp=10Ω IPP=30A
1.2/50µs 1.5kV R
2/10µs 2.5kV R
Note 5: See test circuit 3 forVBOdynamic parameters; Rpisthe protectionresistor located on theline card.
(seenote5)
=10Ω IPP=30A
p
=62Ω IPP=38A
p
=10Ω IPP=30A
p
=62Ω IPP=38A
p
=10Ω IPP=30A
p
=62Ω IPP=38A
p
=10Ω IPP=30A
p
=62Ω IPP=38A
p
Maximum Unit
240
V
250
260
260
V
270
290
320
V
350
400
390
V
440
480
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