SGS Thomson Microelectronics TH562 Datasheet
.OPTIMIZED FOR SSB
.30 MHz
.50 VOLTS
.EFFICIENCY 40%
.COMMON EMITTER
.GOLD METALLIZATION
.P
= 220 W PEP WITH 13 dB GAIN
OUT
SD1731 (TH562)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATI ONS
.500 4LF L (M174)
epoxy sealed
ORDER CODE
SD1731
PIN CO NNECTI O N
DESCRIPTIO N
The SD1731 is a 50 V epitaxial silicon NPNplanar
transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
ABSOLUT E MAXIMUM RATINGS (T
Symbol Parameter Valu e Unit
V
V
V
P
T
CBO
CEO
EBO
I
C
DISS
T
J
STG
Collector-BaseVoltage 110 V
Collector-EmitterVoltage 55 V
Emitter-BaseVoltage 4.0 V
Device Current 20 A
Power Dissipation (T
Junction Temperature +200
Storage Temperature
heatsink
case
= 25°C)
≤ 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
233 W
65 to +150
−
BRAN DI N G
TH562
°
C
°
C
THERMAL DATA
R
TH(j-c)
R
TH(c-s)
July 10, 1995 1/7
Junction-CaseThermal Resistance 0.55
Case-HeatsinkThermal Resistance 0.2
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
SD1731 (TH562)
STATIC (T
Symbol T est Conditions
BV
CBO I
BV
CEO I
BV
EBO
I
CEO
I
CES
h
FE
DYNAMIC (T
Symbol Test Condition s
P
OUT
*
G
P
IMD*
η
c* P
C
OB f = 1 MHz V
= 25°C)
case
= 200mA IE= 0mA
C
= 200mA IB= 0mA
C
IE= 20 mA IC= 0mA
VCE= 30 V IE= 0mA
VCE= 55 V IE= 0mA
VCE= 6V IC=10 A
heatsink
= 25°C)
f = 30 MHz VCE= 50 V ICQ= 150 mA
P
= 220 W PEP VCE= 50 V ICQ= 150 mA
OUT
= 220 W PEP VCE= 50 V ICQ= 150 mA
P
OUT
= 220 W PEP VCE= 50 V ICQ= 150 mA
OUT
= 50 V
CB
Value
Min. Typ. Max.
Unit
110 — — V
55 — — V
4.0 — — V
—— 5mA
— — 10 mA
15 — 80 —
Value
Min. Typ. Max.
Unit
220 — — W
13 — — dB
——
−30
dBc
40 — — %
— 330 — pf
July 10, 1995 2/7
SD1731 (TH562)
TYPICAL PERFORM ANCE
POWER OUTPUT PEP vs POWER INPUT COLLECTOR EFFICIENCY vs POWER
OUTPUT PEP
INTERMODULATION DISTORTION
vs POWER OUTPUT PEP
July 10, 1995 3/7
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