.OPTIMIZED FOR SSB
.30 MHz
.50 VOLTS
.EFFICIENCY 40%
.COMMON EMITTER
.GOLD METALLIZATION
.P
= 220 W PEP WITH 13 dB GAIN
OUT
SD1731 (TH562)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATI ONS
.500 4LF L (M174)
epoxy sealed
ORDER CODE
SD1731
PIN CO NNECTI O N
DESCRIPTIO N
The SD1731 is a 50 V epitaxial silicon NPNplanar
transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
ABSOLUT E MAXIMUM RATINGS (T
Symbol Parameter Valu e Unit
V
V
V
P
T
CBO
CEO
EBO
I
C
DISS
T
J
STG
Collector-BaseVoltage 110 V
Collector-EmitterVoltage 55 V
Emitter-BaseVoltage 4.0 V
Device Current 20 A
Power Dissipation (T
Junction Temperature +200
Storage Temperature
heatsink
case
= 25°C)
≤ 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
233 W
65 to +150
−
BRAN DI N G
TH562
°
C
°
C
THERMAL DATA
R
TH(j-c)
R
TH(c-s)
July 10, 1995 1/7
Junction-CaseThermal Resistance 0.55
Case-HeatsinkThermal Resistance 0.2
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
SD1731 (TH562)
STATIC (T
Symbol T est Conditions
BV
CBO I
BV
CEO I
BV
EBO
I
CEO
I
CES
h
FE
DYNAMIC (T
Symbol Test Condition s
P
OUT
*
G
P
IMD*
η
c* P
C
OB f = 1 MHz V
= 25°C)
case
= 200mA IE= 0mA
C
= 200mA IB= 0mA
C
IE= 20 mA IC= 0mA
VCE= 30 V IE= 0mA
VCE= 55 V IE= 0mA
VCE= 6V IC=10 A
heatsink
= 25°C)
f = 30 MHz VCE= 50 V ICQ= 150 mA
P
= 220 W PEP VCE= 50 V ICQ= 150 mA
OUT
= 220 W PEP VCE= 50 V ICQ= 150 mA
P
OUT
= 220 W PEP VCE= 50 V ICQ= 150 mA
OUT
= 50 V
CB
Value
Min. Typ. Max.
Unit
110 — — V
55 — — V
4.0 — — V
—— 5mA
— — 10 mA
15 — 80 —
Value
Min. Typ. Max.
Unit
220 — — W
13 — — dB
——
−30
dBc
40 — — %
— 330 — pf
July 10, 1995 2/7
SD1731 (TH562)
TYPICAL PERFORM ANCE
POWER OUTPUT PEP vs POWER INPUT COLLECTOR EFFICIENCY vs POWER
OUTPUT PEP
INTERMODULATION DISTORTION
vs POWER OUTPUT PEP
July 10, 1995 3/7
TYPICAL PERFORM ANCE
SD1731 (TH562)
POWER GAIN vs POWER OUTPUT PEP
COLLECTOR BASE CAPACITANCE vs COLLECTOR
EMITTER VOLTAGE
July 10, 1995 4/7
TEST CI RCUIT
SD1731 (TH562)
C1 : Arco 426 + 220pF + 330pF Chips
C2 : 2 x 10nF Chips
C3 : Arco 4615 + 2.2nF + 2 x 1nF LCC + 4.7nF +
C4 : Arco 4213 + 330pF Chip
C5 : 10nF Chip
C6 : 3 x 10nF Chips
C7, C8, C9,
C10, C11 : 1nF + 10nF + 100nF + 4.7
L1 : 3 Turns of 1.2mm Unenameled Wire Diameter,
L2, L3 : 8 Turns of 0.55mm Enameled Wire on Ferrite Core
560pf Chps
µF, 63V + 100µF, 63V
7.1mm, Length 13mm
Phillips 4C6 97170 (9 x 6 x 3)
L4 : 10 Turns of 1.2mm Enameled Wire, Diameter
L5 : 7 Turns of 1.2mm Enameled Wire on Ferrite Core
T1 : 6:3.5 Impedance Transformer on toriod Phillips
T2 : Twisted Pair 4:1 Transformer, 4 Turns Made with
T3 : Feedback Transformer
T4 : Twisted Pair 4:1 Transformer, 4 Turns of bifilar Twisted
8.1mm, Length 20mm
Phillips 4C6 97180
4C6 97180
1.0mm Enameled on toriod Phillips 4C6 97180
Primary: 2 Turns of 1mm Enameled Wire
Secondary: 8 Turns of 1mm Enameled Wire
1.2mm Wires on Ferrite Core Phillips 4C6 97200
July 10, 1995 5/7
MOUNTI NG CIRCUIT
SD1731 (TH562)
BIAS CIRCUI T
July 10, 1995 6/7
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0174 rev. A
SD1731 (TH562)
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - All Rights Reserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
July 10, 1995 7/7
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