SGS Thomson Microelectronics TDE1898CSP, TDE1898CFP, TDE1898CDP, TDE1897CFP, TDE1897CDP Datasheet

TDE1897C TDE1898C
0.5A HIGH-SIDE DRIVER
INDUSTRIALINTELLIGENT POWER SWITCH
PRELIMINARY DATA
0.5A OUTPUT CURRENT 18V TO 35V SUPPLY VOLTAGE RANGE INTERNALCURRENTLIMITING THERMALSHUTDOWN OPENGROUND PROTECTION INTERNAL NEGATIVE VOLTAGE CLAMPING
TO V DIFFERENTIAL INPUTS WITH LARGE COM-
MON MODE RANGE AND THRESHOLD HYSTERESIS
UNDERVO LTAGELOCKOUTWITHHYSTER ESIS OPENLOAD DETECTION TWO DIAGNOSTIC OUTPUTS OUTPUTSTATUS LED DRIVER
DESCRIPTION
The TDE1897C/TDE1898C is a monolithic Intelli­gent Power Switch in Multipower BCD Technol-
BLOCKDIAGRAM
- 45V FOR FAST DEMAGNETIZATION
S
MULTIPOWERBCD TECHNOLOGY
Minidip SIP9 SO20
ORDERING NUMBERS:
TDE1897CDP TDE1898CSP TDE1897CFP TDE1898CDP TDE1898CFP
ogy, for driving inductive or resistive loads. An in­ternal Clamping Diode enables the fast demag­netizationof inductive loads. Diagnostic for CPU feedback and extensive use of electrical protections make this device inher­ently indistructible and suitable for general pur­pose industrial applications.
October 1995
1/12
TDE1897C- TDE1898C
PIN CONNECTIONS (Top view)
SIP9
Minidip
SO20
ABSOLUTE MAXIMUM RATINGS (Minidippin reference)
Symbol Parameter Value Unit
V
V
S–VO
V V
I
E P T
T
S
I
i
O
tot op
stg
Supply Voltage (Pins 3 - 1) (TW< 10ms) 50 V Supply to OutputDifferential Voltage. SeealsoVCl3-2(Pins3 - 2) internally limited V Input Voltage (Pins 7/8) -10 to VS +10 V
i
Differential Input Voltage (Pins 7 - 8) 43 V
i
Input Current (Pins 7/8) 20 mA Output Current (Pins 2 - 1). See also ISC internally limited A Energy from Inductive Load(TJ=85°C) 200 mJ
l
Power Dissipation. See alsoTHERMAL CHARACTERISTICS. internally limited W Operating Temperature Range (T
) -25 to +85 °C
amb
Storage Temperature -55 to 150 °C
THERMALDATA
Symbol Description Minidip Sip SO20 Unit
Thermal Resistance Junction-case Max. 10 °C/W Thermal Resistance Junction-ambient Max. 100 70 90 °C/W
2/12
R
th j-case
R
th j-amb
TDE1897C - TDE1898C
ELECTRICALCHARACTERISTICS (VS=24V; T
= –25 to +85°C,unless otherwise specified)
amb
Symbol Parameter Test Condition Min. Typ. Max. Unit
3 Supply Voltage for Valid
V
smin
I
> 0.5mA @ V
diag
= 1.5V 9 35 V
dg1
Diagnostics
V
3 Supply Voltage (operative) 18 24 35 V
s
3 Quiescent Current
I
q
V
sth1
V
sth2
V
shys
I
sc
V
don
I
oslk
V
ol
3-2 Internal Voltage Clamp (VS-VO)@IO= -500mA 45 55 V
V
cl
I
old
7-8 Common Mode Input Voltage
V
id
I
out=Ios
=0
Undervoltage Threshold 1 (See fig. 1); T
3 Undervoltage Threshold 2 (See fig. 1); Tamb = 0 to +85°C 15.5 V
Supply Voltage Hysteresis (See fig. 1); T Short Circuit Current VS= 18 to 35V; RL=1 0.75 1.5 A
3-2 Output Voltage Drop @ I
2 OutputLeakage Current @ Vi=Vil,Vo= 0V 300 µA
2 Low State Out Voltage @ Vi=Vil;RL= 0.8 1.5 V
2 Open Load Detection Current Vi=Vih;T
Range (Operative)
7-8 Input Bias Current Vi= –7 to 15V; –In = 0V –700 700 µA
I
ib
7-8 InputThreshold Voltage V+In > V–In 0.8 1.4 2 V
V
ith
7-8 Input Threshold Hysteresis
V
iths
V
il
V
ih
= 0 to +85°C11 V
amb
= 0 to +85°C 0.4 1 3 V
amb
= 625mA; Tj=25°C
out
@I
= 625mA; Tj= 125°C
out
= 0 to +85°C1 6mA
amb
VS= 18 to 35V, V
S=Vid
7-8 < 37V
–7 15 V
V+In > V–In 50 400 mV
2.5
4.5
250 400
4
7.5
425 600
Voltage
R
7-8 Diff. InputResistance @ 0 < +In < +16V; –In = 0V
id
@ –7 < +In < 0V; –In= 0V
I
7-8 Input Offset Current V+In = V–In +Ii
ilk
0V < V
<5.5V –Ii
i
–In = GND +Ii 0V < V+In <5.5V –Ii –250
+In = GND +Ii 0V < V–In <5.5V –Ii
V
2 Output Status Threshold 1
oth1
(See fig. 1) 12 V
–20 –75 –25
–100
–50
400 150
+10
–125
–30 –15
+20 µA
+50 µA
Voltage
V
2 Output Status Threshold 2
oth2
(See fig. 1) 9 V
Voltage
V
2 Output Status Threshold
ohys
(See fig. 1) 0.3 0.7 2 V
Hysteresis
I
4 Output Status Source Current V
osd
3-4 Active Output Status Driver
V
osd
Drop Voltage
4 Output Status Driver Leakage
I
oslk
Current
5/6 Diagnostic Drop Voltage D1 / D2 = L @ I
V
dgl
out>Voth1,Vos
Vs–Vos@Ios= 2mA;
T
= -25 to 85°C
amb
V
out<Voth2,Vos
V
= 18 to 35V
S
D1 / D2 = L @ I
5/6 Diagnostic Leakage Current D1 / D2 =H @ 0 < Vdg<V
I
dglk
= 2.5V 2 4 mA
5V
=0V
diag diag
= 0.5mA = 3mA
s
25 µA
250
1.5 25 µA
VS= 15.6 to 35V
5/6-3 Clamping Diodes at the
V
fdg
@I
= 5mA; D1 / D2 = H 2 V
diag
Diagnostic Outputs. Voltage Drop to V
Note Vil < 0.8V, Vih > 2V @ (V+In> V–In); Minidip pin reference.
All test not dissipative.
S
mA mA
mV mV
K K
µA
µA µA
µA
mV
V
3/12
TDE1897C- TDE1898C
SOURCEDRAIN NDMOS DIODE
Symbol Parameter Test Condition Min. Typ. Max. Unit
2-3 Forward On Voltage @ I
V
fsd
2-3 Forward Peak Current t = 10ms; d = 20% 2 A
I
fp
2-3 Reverse Recovery Time If= 625mA di/dt = 25A/µs 200 ns
t
rr
2-3 Forward Recovery Time 50 ns
t
fr
THERMALCHARACTERISTICS (*)
Θ Lim Junction Temp. Protect. 135 150 °C
T
H
Thermal Hysteresis 30 °C
SWITCHINGCHARACTERISTICS (VS=24V; RL=48Ω) (*)
= 625mA 1 1.5 V
fsd
t
on
t
off
t
d
Turn on Delay Time 100 µs Turn off Delay Time 20 µs Input Switching to Diagnostic
100 µs
Valid
Note Vil < 0.8V, Vih > 2V @ (V+In > V–In); Minidip pin reference. (*) Not tested.
Figure1
DIAGNOSTICTRUTH TABLE
Diagnostic Conditions Input Output Diag1 Diag2
Normal Operation L
H
Open Load Condition (I
)L
o<Iold
H
Short to V
S
L
H
Short Circuit to Ground (I
) (**) TDE1897C
O=ISC
TDE1898C
H <H (*) H L HH
Output DMOS Open L
H
Overtemperature L
H
SupplyUndervoltage (V supplyvoltage;V
S<Vsth2
S<Vsth1
in the fallingphase of the
inthe rising phaseof the supply
L
H
voltage)
(*) According to the intervention of the current limiting block. (**) A cold lampfilament,or a capacitive load may activatethe current limiting circuit of the IPS,when theIPS is initially turned on.TDE1897 uses Diag2 to signal such condition, TDE1898 does not.
4/12
L
H
L
H H
H
H H
H
L L
L
H
L L
L L
L L
L
H H
L
H H
L L
H H
H H
H H
H H
H H
L L
L L
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