SGS Thomson Microelectronics TDE1891V, TDE1891L, TDE1890V, TDE1890D Datasheet
TDE1890
INDUSTRIALINTELLIGENT POWER SWITCH
2A OUTPUT CURRENT
18V TO35V SUPPLY VOLTAGE RANGE
INTERNALCURRENT LIMITING
THERMALSHUTDOWN
OPENGROUNDPROTECTION
INTERNALNEGATIVE VOLTAGE CLAMPING
TOV
DIFFERENTIAL INPUTS WITH LARGE COM-
MON MODE RANGE AND THRESHOLD
HYSTERESIS
UNDERVOLTAGELOCKOUTWITHHYSTERESIS
OPENLOAD DETECTION
TWODIAGNOST ICOUTPU TS
OUTPUTSTATUSLEDDRIVER
DESCRIPTION
The TDE1890/1891 is a monolithic Intelligent
Power Switch in Multipower BCD Technology, for
BLOCK DIAGRAM
- 50VFOR FASTDEMAGNETIZATION
S
TDE1891
2A HIGH-SIDE DRIVER
MULTIPOWER BCD TECHNOLOGY
MULTIWATT11 MULTIWATT11V PowerSO20
(In line)
ORDERING NUMBERS:
TDE1891L TDE1890V TDE1890D
TDE1891V
driving inductive or resistive loads. An internal
ClampingDiode enablesthe fast demagnetization
of inductiveloads.
Diagnostic for CPU feedback and extensive use
of electrical protections make this device extremely rugged and specially suitable for industrial automationapplications.
July 1998
1/12
TDE1890 - TDE1891
PIN CONNECTION (Topview)
11
10
9
8
7
6
5
4
3
2
1
D93IN022
OUTPUT
SUPPLY VOLTAGE
OUTPUT
N.C.
N.C.
GND
OUTPUT STATUS
INPUT INPUT +
DIAGNOSTIC 2
DIAGNOSTIC 1
GND
OUTPUT
OUTPUT
N.C.
SUPPLY VOLTAGE
SUPPLY VOLTAGE
N.C.
OUTPUT
OUTPUT N.C.
GND GND
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
GND1
OUTPUT STATUS
INPUT INPUT +
N.C.
DIAGNOSTIC 2
DIAGNOSTIC 1
N.C.
D93IN021
Note: Output pins mustbe must be connectedexternally to the package touse allleadsfor the outputcurrent (Pin9 and 11 for Multiwatt
package, Pin 2, 3, 8 and 9 for PowerSO20package).
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
S–VO
V
V
I
P
T
T
E
S
I
O
tot
op
stg
Supply Voltage (Pin 10) (TW< 10ms) 50 V
Supply toOutputDifferential Voltage. Seealso VCl(Pins10 - 9) internally limited V
Input Voltage (Pins 3/4) -10 to VS +10 V
i
Differential Input Voltage (Pins 3 - 4) 43 V
i
Input Current (Pins 3/4) 20 mA
i
Output Current(Pin 9). See also ISC (Pin 9) internally limited A
Power Dissipation.See also THERMAL CHARACTERISTICS. internally limited W
Operating Temperature Range (T
) -25 to +85 °C
amb
Storage Temperature -55 to 150 °C
Energy Induct.Load TJ=85°C1J
I
THERMAL DATA
Symbol Description Multiwatt PowerSO20 Unit
Thermal Resistance Junction-case Max. 1.5 1.5 ÉC/W
Thermal Resistance Junction-ambient Max. 35 – ÉC/W
2/12
R
th j-case
R
th j-amb
TDE1890 - TDE1891
ELECTRICALCHARACTERISTICS (VS= 24V; T
= –25 to +85°C, unlessotherwisespecified)
amb
Symbol Parameter Test Condition Min. Typ. Max. Unit
V
smin
Supply Voltage for Valid
I
> 0.5mA ; V
diag
= 1.5V 9 35 V
dg1
Diagnostics
V
s
I
q
V
sth1
V
sth2
V
shys
I
sc
V
don
I
oslk
V
ol
V
cl
Supply Voltage (operative) 18 24 35 V
Quiescent Current
I
out=Ios
=0
V
V
il
ih
3
5
7
8
Undervoltage Threshold 1 (See fig. 1),Tamb = 0 to +85°C11 V
Undervoltage Threshold 2 15.5 V
Supply Voltage Hysteresis 1 V
Short Circuit Current VS= 18 to 35V; RL=2Ω 2.6 5 A
Output VoltageDrop Iout = 2.0A Tj=25°C
T
= 125°C
I
= 2.5A Tj=25°C
out
j
T
= 125°C
j
360
575
440
700
500
800
575
920
Output LeakageCurrent Vi=Vil;Vo= 0V 500 µA
Low State Out Voltage Vi=Vil;RL=
Internal Voltage Clamp (VS-VO)IO=1A
∞
48 53 58 V
0.8 1.5 V
Single Pulsed: Tp = 300µs
I
old
V
id
I
ib
V
ith
V
iths
Open Load Detection Current Vi=Vih;T
Common Mode Input Voltage
Range (Operative)
VS= 18 to 35V,
V
S-Vid
= 0 to +85°C 0.5 9.5 mA
amb
–7 15 V
< 37V
Input Bias Current Vi= –7 to 15V;–In = 0V –250 250 µA
Input Threshold Voltage V+In > V–In 0.8 1.4 2 V
Input Threshold Hysteresis
V+In > V–In 50 400 mV
Voltage
R
id
I
ilk
V
oth1
Diff. Input Resistance 0 < +In < +16V; –In = 0V
–7 < +In < 0V ; –In = 0V
Input Offset Current V+In = V–In +Ii
0V < V
<5.5V –Ii
i
–In = GND +Ii
0V < V+In <5.5V –Ii –250
+In = GND +Ii
0V < V–In <5.5V –Ii
Output StatusThreshold 1
(See fig. 1) 11.5 V
400
150
–20
–75 –25
+10
–125
–100
–50
–30
–15
+20 µA
+50 µA
Voltage
V
oth2
Output StatusThreshold 2
(See fig. 1) 8.5 V
Voltage
V
ohys
Output StatusThreshold
(See fig. 1) 0.7 V
Hysteresis
I
osd
V
osd
I
oslk
V
dgl
I
dglk
Output StatusSource Current V
Active Output Status Driver
Drop Voltage
Output StatusDriver Leakage
Current
out>Voth1;Vos
VS – Vos;Ios= 2mA
T
= -25 to +85°C
amb
V
out<Voth2;Vos
V
= 18 to 35V
S
Diagnostic Drop Voltage D1 / D2 = L ; I
D1/D2=L; I
= 2.5V 2 4 mA
=0V
= 0.5mA
diag
= 3mA
diag
Diagnostic Leakage Current D1 / D2 =H ; 0 < Vdg < V
5V
25 µA
250
1.5
s
25 µA
VS= 15.6 to 35V
V
fdg
Clamping Diodes at the
Idiag = 5mA; D1 / D2 = H 2 V
Diagnostic Outputs.
Voltage Drop to V
Note Vil< 0.8V, Vih> 2V @ (V+In > V–In)
S
mA
mA
mV
mV
mV
mV
KΩ
KΩ
µ
µA
µA
µ
mV
V
A
A
3/12
TDE1890 - TDE1891
SOURCEDRAIN NDMOS DIODE
Symbol Parameter Test Condition Min. Typ. Max. Unit
V
fsd
I
fp
t
rr
t
fr
THERMALCHARACTERISTICS
Ø Lim Junction Temp. Protect. 135 150 °C
T
H
SWITCHING CHARACTERISTICS (VS= 24V; RL=12Ω)
Forward On Voltage @ Ifsd = 2.5A 1 1.5 V
Forward Peak Current t = 10ms; d = 20% 6 A
Reverse Recovery Time If = 2.5A di/dt = 25A/µs 200 ns
Forward Recovery Time 100 ns
Thermal Hysteresis 30 °C
t
on
t
off
t
d
Turn on Delay Time 200 µs
Turn off Delay Time 40 µs
Input Switchingto Diagnostic
200 µs
Valid
Note Vil < 0.8V, Vih > 2V@ (V+In> V–In)
Figure 1
TRUE
FALSE
HIGH
LOW
DIAGNOSTICTRUTHTABLE
Diagnostic Conditions Input Output Diag1 Diag2
Normal Operation L
H
Open Load Condition (I
)L
o<Iold
H
Short to V
S
L
H
Short Circuit to Ground (I
) (**) TDE1891
O=ISC
TDE1890
H <H (*) H L
HH
Output DMOS Open L
H
Overtemperature L
H
Supply Undervoltage (V
S<Vsth2
)L
H
(*) According to theintervention of the current limitingblock.
(**) A cold lampfilament,or a capacitiveload may activate the current limiting circuit of the IPS, when the IPSis initially turned on. TDE1891
uses Diag2 to signal such condition, TDE1890 does not.
L
H
L
H
H
H
L
L
L
L
L
L
L
H
H
H
L
L
L
H
H
H
L
H
H
L
L
H
H
H
H
H
H
H
H
H
H
L
L
L
L
4/12
Loading...