SGS Thomson Microelectronics TDF1747, TDE1747 Datasheet
INTERFACECIRCUIT – RELAY AND LAMP – DRIVER
OPENGROUNDPROTECTION
HIGHOUTPUTCURRENT
ADJUSTABLE SHORT-CIRCUIT PROTEC-
TION TO GROUND
THERMAL PROTECTION WITH HYSTERE-
SIS TO AVOID THE INTERMEDIATE OUTPUTLEVELS
LARGE SUPPLY VOLTAGE RANGE : + 10 V
TO + 45 V
SHORT-CIRCUIT PROTECTION TO V
DESCRIPTION
The TDE/TDF1747is a monolithiccomparatordesigned for high current and high voltage applications, specifically to drive lamps, relays, stepping
motors.
These device is essentially blow-out proof. Current limiting is available to limit the peak output
current to safe values, the adjustment only requires one external resistor. In addition, thermal
shut down is provided to keep the I.C.from overheating. If internals dissipation becomes too
great, the driver will shut down to prevent excessive heating. TDE1747 has an open ground protection. The output is also protected from shortcircuitswith the positivepower supply.
PIN CONNECTIONS (Topview)
CC
TDE1747
TDF1747
Minidip (DP)
SO14 (FP)
ORDERING NUMBERS:
TDE1747DP
TDE1747FP
TDF1747DP
The device operates over a wide range of supply
voltages from standard ± 15 V operationalamplifier supplies down to the single + 12 V or + 24
usedfor industrial electronicsystems.
Minidip
November 1991
This is advanced information on anew product now in development or undergoing evaluation. Details are subject tochange without notice.
SO14
1/11
TDE1747 - TDF1747
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
V
ID
V
I
I
O
P
tot
T
stg
T
oper
(*) 60V, tâ 10ms
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
R
th(j-c)
R
th(j-a)
R
th
R
th
Supply Voltage 50 * V
Differantial Input Voltage 50 V
Input Voltage 50 V
Output Current 1 A
Power Dissipation (T
=+25°C) Internally Limited W
amb
Storage Temperature Range – 65 to + 150 °C
Operating Ambient Temperature Range
TDE1747
TDF1747
–25to+85
–40to+85
Maximum Junction-caseThermal Resistance 50 °C/W
Maximum Junction-ambient Thermal Resistance 120 °C/W
Junction-ceramic Substrate (case glued to substrate) SO14 90 °C/W
Junction-ceramic Substrate (case glued to substrate, substrate temperature
maintened constant)
65 °C/W
SO14
°C
°C
SCHEMATIC DIAGRAM
2/11
TEST CIRCUIT
TDE1747 - TDF1747
SIMPLIFIEDCIRCUIT
3/11
TDE1747 - TDF1747
ELECTRICAL CHARACTERISTICS Tj= – 25 to +85 °C, VCC= 8 to 45 V, unless otherwise specified
(note 1).
Symbol Parameter Min. Typ. Max. Unit
V
IO
I
IB
I
CC
Input Offset Voltage - (note 2) – 2 50 mV
Input Bias Current – 0.1 1.5 mA
Supply Current (VCC= + 24 V, IO=0)
High Level
Low Level
–
–
4
2
6
4
mA
mA
V
I(max)
I
SC
V
CC–VO
I
OL
Notes :
1) For operating at high temperature, the TDE/TDF1747, must be derated based on a + 150 C maximum junction temperature and a
junction-ambient thermal resistance of 120 °C/W for Minidip and 100 °C/W for the SO14.
2) The offsetvoltage given isthe maximum value of input voltage required to drive the output voltage within 2 V of the ground or the supply
voltage.
Figure1: Available Output Current vs. Limiting
Common-mode Input Voltage Range 2 – VCC–2 V
Short-circuit Current Limit
=+25°C, VCC= + 24)
(T
amb
= 1.5 Ω TDE1747
R
SC
= ∞
R
SC
–
–
480
35
–
50
Output Saturation Voltage(output high)
(R
=0, VI+–VI– ≥ 50 mV)
SC
= 300 mA, Tj=+25°C
I
O
= + 150 °C
T
j
–
1.15
–
1.05
1.4
1.3
Low Level Output Current
=0, VCC=+24V)
(V
O
=+25°C – 0.01 10 µA
T
j
Figure2: Peak Short-circuit Output Current vs.
Resistor
LimitingResistor
mA
mA
V
V
4/11
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