SGS Thomson Microelectronics TDA9511 Datasheet

DC COUPLINGHIGH VOLTAGE VIDEO AMPLIFIER

.

BANDWIDTH : 40MHzTYPICAL

.

RISEANDFALLTIME : 9nsTYPICAL

.

SUPPLYVOLTAGE: 110V

.

POWERDISSIPATION: 3.0W

.

ESD PROTECTED

DESCRIPTION

The TDA9511isa video amplifier designed with a
high voltage Bipolar/CMOS/DMOS technology
(BCD).It drives in DC coupling modeone cathode
of a monitor and is protected against flashovers.
It is available in Heptawatt package.

HEPTAWATT

(Plastic Package)

ORDER CODE :

TDA9511

TDA9511

PIN CONNECTIONS

7
6
5
4
3
2
1

Tab connected to Pin 4

PIN CONFIGURATION

Pin N Symbol Function

1 IN- Inputof the amplifier
2V
3V
4 GNDA Analog Ground
5 GNDP Power Ground
6 OUT Output driving the cathode
7V

CC

REF

DD

Low VoltagePower Supply(12V Typ.)
Internal Voltage Reference (3.3V)

High Voltage Power Supply (110V Max.)

V

DD

OUT
GNDP
GNDA
V

REF

V

CC

IN-

9511-01.EPS

9511-01.TBL

April 1998

1/5

TDA9511

BLOCKDIAGRAM

CC

IN- 1

TDA9511

2V

4AGND

V

7

DD

6 OUT

V

REF

5 PGND

3

V

REF

9511-02.EPS

ABSOLUTE MAXIMUMRATINGS

Symbol Parameter Value Unit

V

DD

V

CC

Supply High Voltage (Pin 7) 120 V
Supply Low Voltage (Pin 2) 20 V

VESD ESD Susceptibility

I

OD

I

OG

I

j

T

j

T

oper

T

stg

Note 1 :

Pulsed current t≤50µs

Human Body Model, 100pF Discharge through 1.5kΩ
EIAJ Norm, 200pF Discharge through 0Ω

Output Current to VDD(Pin 6)
Output Current to Ground (Pin 6) (see Note 1)

Input Current (Pin 1) 50 mA
Junction Temperature 150
Operating Ambient Temperature 0, +70
Storage Temperature -20, +150

2

300

protected

80 mA

THERMAL DATA

Symbol Parameter Value Unit

R
R

th (j-c)
th (j-a)

Junction-Case Thermal Resistance Max. 3
Junction-Ambient Thermal Resistance Typ. 70

kV

o
o
o

o

C/W

o

C/W

V

C
C
C

9511-02.TBL

9511-03.TBL

2/5

TDA9511

ELECTRICAL CHARACTERISTICS

= 12V,VDD= 110V,T

(V

CC

=25oC, unless otherwisespecified)

amb

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V
V

I

I

V

V

dV

IN

dV

IN

V

SATH

V

SATL

ELin Linearity Error 17V < V

High Supply Voltage(Pin 7) 20 110 V

DD

Low SupplyVoltage (Pin 2) 10 12 15 V

CC

DCCurrentofHighVoltageSupply

DD

(without feedback current)
Low VoltageSupply Internal DC Current 15 mA

CC

Internal Reference (Pin 3) 3.2 V

REF

Input Voltage V

IN

/dVCCDrift of Input Voltage versus V

CC

V

= 60V 9 mA

OUT

= 60V 3.25 V

OUT

Measured on Pin 1 0.12 %

/dT Driftof InputVoltageversus Temperature 0.5 mV/oC

High OutputSaturation Voltage (Pin 6) IO= -60mA VDD- 8.5 V
Low OutputSaturationVoltage (Pin 6) IO= 60mA 12 V

OUT<VDD

- 15V 5 %

OS Overshoot 5%

BW Bandwidth at -3dB Measured on CRT cathodes.

= 10pF, Rprotect = 220Ω,

C

LOAD

t

R,tF

G

Rise and Fall Time Measured between 10% & 90%

Open Loop Gain V

O

= 60V, ∆V

V

OUT

Feedback gain= 20

of output pulse,

= 10pF, Rprotect = 220Ω,

C

LOAD

= 60V, ∆V

V

OUT

= 60V 60 dB

OUT

OUT

OUT

= 20VPP,

= 40V

PP

Open Loop Gain Temperature

40 MHz

9ns

o

0.03 dB/

C

Coefficient

I

R

Note 2 : Characterized and not tested.

Input Bias Current(Pin 1) V

IB

= 60V 20 30 µA

OUT

Input Bias TemperatureCoefficient 90 nA/
Input Resistance See Note 2 200 kΩ

IN

o

C

9511-04.TBL

Figure1 : Measurementof Input Voltage

V

VIN=

OUT

(1 + R2/R1)

R1

R2

V

IN

V

OUT

9511-03.EPS

3/5

TDA9511

TYPICALAPPLICATION

TheTDA9511consists of :

- A differentialamplifierwithactiveload,

- A DMOS output buffer,

- Abandgapvoltagereference(Pin3forfilteringonly).

PC boardlay-out

The best performances are obtained with a care­fully designed HF PC-Board, especially for the
output and input capacitors.
ThefeedbackresistorR
capacitor(C

< 0.3pF).

F

This parasitic capacitor C
by a capacitor R3 (roughly 20 ⋅ C
parallelwiththe input resistor R1.
The full bandwidth of the device is only obtained
with well matched compensation otherwise the
applicationwill have either an integrator response
with a low bandwidth or a differentiator response
withtoo much ringing.
Adiode D

(seeFigure2) has to be connectedfor

P

flashoverprotection.

Figure2 :

TypicalEvaluationSchematic

musthavea lowparasitic

F

must be compensated

F

) connected in

F

Powerdissipation

The power dissipationconsistsof a staticpart and
a dynamic part. The static dissipation varies with
the output voltage and the feedbackresistor. The
dynamicpower dissipationincreaseswiththepixel
frequency.

Fora signalfrequencyof40MHzand40V

PP

output

signal,thetypicalpower dissipationisabout3.0W,

DD

=110V.

for V
In firstapproximation,the dynamicdissipation is :

P

D=VDD*CLOAD

* ∆V

OUT

*f

and the total dissipation is :

P=V

DD*CLOAD

*∆V

+VCC*ICC-(VDD-V

*f+VDD*I

OUT

_____

)

OUT

_____

V

OUT

R

FEEDBACK

DD

with f = pixel frequency

P = 110Vx 10pF x 40V x 40MHz + 110Vx 7mA

+12 x 20mA- 60

2

V/20kΩ= 2.95W

IN

R1

R3

C3

V

IN

Recommendedvalues :
R1 = 1kΩ, R2 = 1.8kΩ,R

=20kΩ,RP= 200Ω,

F

C4 > 10nF, C3 = 10 to 12pFfor C
R3 # 150Ω.

R2

F

# 0.5pF.

C4

C

F

R

F

V

1

3

V

CC

2

DD

D

P

OUT

R

P

C

V

OUT

LOAD

t

9511-04.EPS

7

6

5

4

V

4/5

TDA9511

PACKAGEMECHANICAL DATA :

Dimensions

Min. Typ. Max. Min. Typ. Max.

7 PINS - PLASTICHEPTAWATT

Millimeters Inches

A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110

D1 1.2 1.35 0.047 0.053

E 0.35 0.55 0.014 0.022
F 0.6 08 0.024 0.031

F1 0.9 0.035

G 2.41 2.54 2.67 0.095 0.100 0.105
G1 4.91 5.08 5.21 0.193 0.200 0.205
G2 7.49 7.62 7.8 0.295 0.300 0.307
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409

L 16.97 0.668
L1 14.92 0.587
L2 21.54 0.848
L3 22.62 0.891
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260

M 2.8 0.110

M1 5.08 0.200

Dia. 3.65 3.85 0.144 0.152

Informationfurnished is believed to be accurate and reliable.However,SGS-THOMSONMicroelectronics assumesno responsibility
for the consequences of use of such information nor for any infringement of patentsor other rights of third parties which may result
from itsuse.No licence is grantedby implication orotherwise underany patent or patent rights of SGS-THOMSONMicroelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
informationpreviouslysupplied. SGS-THOMSON Microelectronics products are notauthorized for useas criticalcomponents in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.

PM-HEPTV.EPS

HEPTV.TBL

1998 SGS-THOMSON Microelectronics - AllRights Reserved



Purchase of I

2

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C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips

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