Datasheet TDA7376B Datasheet (SGS Thomson Microelectronics)



2 x 35W POWER AMPLIFIER FOR CAR RADIO

HIGHOUTPUTPOWERCAPABILITY:
2 x40W max./4
2 x35W/4ΩEIAJ
2 x25W4Ω @ 14.4V,1KHz, 10%

DIFFERENTIAL INPUTS
MINIMUMEXTERNALCOMPONENT COUNT
INTERNALLYFIXED GAIN (26dB)
MUTEFUNCTION (CMOS COMPATIBLE)
AUTOMUTE AT MINIMUM SUPPLY VOLT-

AGE DETECTION
STAND-BY FUNCTION
NO AUDIBLE POP DURING MUTE AND ST-

BY OPERATIONS
CLIPPING DETECTOR WITH PROGRAMMA-

BLE DISTORTIONTHRESHOLD

PROTECTIONS:

SHORT CIRCUIT (OUT TO GROUND, OUT
TO SUPPLY VOLTAGE, ACROSS THE
LOAD)

OVERRATING CHIP TEMPERATURE WITH
SOFT THERMALLIMITER

LOADDUMP VOLTAGE
FORTUITOUS OPEN GROUND
LOUDSPEAKERDC CURRENT
ESD

Ω

TDA7376B

MULTIWATT15

ORDERING NUMBER: TDA7376B

DESCRIPTION

The TDA7376B is a new technology dual bridge
Audio Amplifier in Multiwatt 15 package designed
for car radioapplications. Thanksto thefully com­plementary PNP/NPN output stage configuration
the TDA7376Bdelivers a rail-to-rail voltage swing
with no need of bootstrap capacitors. Differential
input pairs, that will accept either single ended or
differentialinput signals, guarantee high noise im­munity making thedevice suitablefor both car ra­dio and carboosters applications.

The audio mute control, that attenuates the out­put signal of theaudio amplifiers, suppresses pop
on - off transients and cuts any noises coming
from previous stages. The St-By control, that de­biases the amplifiers, reduces the cost of the
powerswitch. The on-boardprogrammable distor­tion detector allows compression facility when­ever the ampifier is overdriven,so limiting the dis­tortion at anylevels inside the presettablerange.

PIN CONNECTION

September 1998

This is advancedinformation on anew product now in development or undergoingevaluation.Details are subject to change withoutnotice.

(Continued)

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TDA7376B

BLOCK DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

OP

V

S

V

peak

I

O

P

tot

T

stg,Tj

Operating Supply Voltage 18 V
DC Supply Voltage 28 V
Peak Supply Voltage (t= 50ms) 50 V
Output Peak Current(non rep. t = 100µs)

Output Peak Current(rep. f > 10Hz)
Power Dissipation at T

=85°C36W

case

4.5

3.5

Storage and Junction Temperature –40 to150 °C

THERMAL DATA

Symbol Parameter Value Unit

Thermal ResistanceJunction-case max. 1.8

2/9

R

th j-case

C/W

°

A
A

Figure 1: DifferentialInputsTest and ApplicationCircuit

1µF

TDA7376B

Figure 2: SingleEnded Inputs Test and ApplicationCircuit

1µF

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TDA7376B

Figure 3: ApplicationBoardReference Circuit

1µF

Figure 4

: P.C. Boardand ComponentsLayout of the Circuit of Fig.3 (1:1 scale)

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TDA7376B

ELECTRICALCHARACTERISTICS (Refer to thetest fig.1 and 2 circuit, T

f = 1KHz; R

=4Ω; unlessotherwisespecified.)

L

=25°C; VS= 14.4V;

amb

Symbol Parameter Test Condition Min. Typ. Max. Unit

V

S

I

d

V

OS

P

O

P

O max

P

O EIAJ

THD Distortion P

C

T

R

IN

G

V

G

∆

E

N

SVR Supply Voltage Rejection f = 100Hz;Vr = 1Vrms;

Supply Voltage 8 18 V
Total Quiescent Drain Current RL=

∞

Output Offset Voltage 120 mV
Output Power THD = 10% 23 25 W
Max. Output Power (*) VS = 14.4V 36 40 W
EIAJ Output Power(*) VS= 13.7V 32 35 W

= 0.5 to 10W 0.03 0.3 %

O

Cross Talk f = 1KHz;Rg = 0

f = 10KHz;Rg = 0

Input Resistance differential input

single ended input

Voltage Gain differential input

single ended input

Channel Gain Balance 1 dB

V

45
40

25
25

Input Noise Voltage Rg = 600Ω; ”A Weighted”

Rg = 600Ω; 22Hz to 22KHz

80
70

26
26

3
46

45

200 mA

27
27

Rg= 0
f = 10KHz;Vr =1Vrms;

55

Rg= 0

BW Power Bandwidth (–3dB) 75 KHz

CMRR Common ModeRejection Ratio V

A

V

V

sb OUT

A

V

V

M OUT

D

D

DOUT

SB

sb IN

I

sb

M

MIN

I

6

DL

Stand-by Attenuation VSB= 1.5V; P
Stand-by in Threshold 1.5 V
Stand-by out Threshold 3.5 V
Stand-by Current Consumption 100 µA
Mute Attenuation VM= 1.5V; P
Mute in Threshold 1.5 V
Mute out Threshold 3.5 V
Mute pin Current V6 = 0 to VS,;V
Distortion Detection Level (**) 3.5 %
Distortion Detector OutputDC

Current

(*) Saturated square wave output
(**) see figure 5 forTHD setting.

= 1Vrms input referred 60 dB

CM

=1W 80 90 dB

Oref

=1W 85 dB

Oref

= 18V 100 µA

S max.

Output low, sinkedcurrent
(V

= 1.5V)

pin10

Output high, leakage current
(V

pin10=VS

,@V

Smax

= 18V)

1mA

10 µA

dB
dB

K

Ω

K

Ω

dB
dB

V

µ

V

µ

dB
dB

The TDA7376Bis equipped with a programmable
clipping distortion detector circuitry that allows to
signal out the output stage saturation by providing
a current sinking into an open collector output
(DDout) when the total harmonic distortion of the
output signal reaches the preset level. The de­sired thresholdis fixed through an externaldivider
that produces a proper voltage level across the

THD set pin. Fig. 5 shows the THD detection
threshold versus the THD set voltage. Since it is
essentialthat the THD set voltagebe proportional
to the supply voltage, fig. 5 shows its value as a
fraction of V

. The actual voltage can be com-

CC

puted by multiplyingthe fraction corresponding to
the desired THD threshold by the application’s
supplyvoltage.

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TDA7376B

Figure 5: ClipDetectorThreshold vs. THD set.

Voltage.

VS= 14.4V
R

=4Ω

L

f =1KHz

Figure 7: QuiescentCurrent vs. Temperature

Figure6: QuiescentCurrent vs. SupplyVoltage

R

=4

Ω

L

Figure8: OuputPower vs.Supply Voltage

f = 1KHz
THD = 1%

R

=4

Ω

L

V

=0

i

Figure 9: OuputPower vs. Supply Voltage

f = 1KHz
THD =10%

R

= 3.2

Ω

L

R

=4Ω

L

R

= 3.2

Ω

L

R

=4Ω

L

Figure10: EIAJPower vs. SupplyVoltage

f = 1KHz
V

= 2.5Vrms

i

R

= 3.2

Ω

L

=4

R

L

Ω

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TDA7376B

Figure 11: THDvs. Frequency

VS= 14.4V
R

=4

Ω

L

P

= 12W

O

f (Hz)

Figure 13: DissipatedPower &Efficiency vs. Out-

put Power

V

= 14.4V

S

R

=4

Ω

L

f = 1KHz

Figure12: THDvs. Output Power

Figure14: SVRvs. Frequency

R

=0

i

V

S

R

L

= 14.4V

=4Ω

Figure 15: CMRRvs. Frequency

V

= 14.4V

S

R

=4

Ω

L

= 1Vrms

V

i

= 600

V

= 14.4V

S

R

=4

L

= 1Vrms

V

r

R

Ω

Ω

i

f (Hz)

Figure16: Crosstalkvs. Frequency

= 14.4V

V

S

R

=4

Ω

L

P

=1W

O

R

=0

L

f (Hz)

f (Hz)

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TDA7376B

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A5
B 2.65 0.104
C 1.6 0.063
D 1 0.039
E 0.49 0.55 0.019 0.022

F 0.66 0.75 0.026 0.030

G 1.02 1.27 1.52 0.040 0.050 0.060
G1 17.53 17.78 18.03 0.690 0.700 0.710
H1 19.6 0.772
H2 20.2 0.795

L 21.9 22.2 22.5 0.862 0.874 0.886
L1 21.7 22.1 22.5 0.854 0.870
L2 17.65 18.1 0.695
L3 17.25 17.5 17.75 0.679 0.689 0.699
L4 10.3 10.7 10.9 0.406 0.421 0.429
L7 2.65 2.9 0.104 0.114

M 4.25 4.55 4.85 0.167 0.179 0.191

M1 4.63 5.08 5.53 0.182 0.200 0.218

S 1.9 2.6 0.075 0.102

S1 1.9 2.6 0.075 0.102

Dia1 3.65 3.85 0.144 0.152

mm inch

0.197

0.886

0.713

OUTLINE AND

MECHANICAL DATA

Multiwatt15 V

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TDA7376B

Information furnished is believed tobe accurate and reliable. However, STMicroelectronics assumesno responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patentor patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publicationsupersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components inlife support devices or systems without express written approval of STMicroelectronics.

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