Datasheet TC1026CEOA, TC1026 Datasheet (SGS-THOMSON Microelectronics)

A

UA

OA

SOP

C

TC1026

Linear Building Block – Low Power Comparator with

Op Amp and Voltage Reference

Features

• Combines Low-Power OpAmp, Comparator and
Voltage Reference in a Single Package

• Optimized for Single Supply Operation

• SmallPackages:8-PinMSOP,8-PinSOIC,
8-Pin PDI P

• Ultra Low Input Bias Current: Less than 100pA

• Low Quiescent Current: 12µA(Typ.)

• Rail-to-Rail Inputs and Outputs

•OperatesDowntoV

=1.8V,Min

DD

Applications

• Power Management Circuits

• Battery Operated Equipment

• Consumer Products

Device Selection Table

Part Number Package

TC1026CEPA 8-Pin PDIP -40°C to +85°C

TC1026CEUA 8-Pin MSOP -40°C to +85°C
TC1026CEOA 8-Pin SOIC -40°C to +85°C

Temperature

Range

Package Types

General Description

The TC1026 is a mixed-function device combining a
general-purpose op amp, comparator and voltage
reference in a single 8-pin package. This increased
integration allows the user to r eplace two or three
packages, which saves space, lowers supply current
and increases system performance.

Both the op amp and comparatorhaverail-to-rail inputs
and outputs which allows operation from low supply
voltages with large input and output swings. The
TC1026 is optimized for low voltage (V

=1.8V),low

DD

supply current (12µA typ) operation.
Packaged in a space-saving 8-Pin MSOP, the TC1026

consumes half the board area of an 8-Pin SOIC and is
ideal for applications requiring high integration, small
size and low power. It is also available i n 8-Pin SOIC
and 8-Pin PDIP packages.

Functional Block Diagram

AMPOUT

AMPIN-

AMPIN+

-

AMP

TC1026

+

+

CMP

1

2

3

8

V

DD

7

CMPOUT

-

6

REF (CMPIN-)

8-Pin PDIP

-Pin M

4

V

SS

Voltage

Reference

5

CMPIN+

-Pin SOI

V

AMPOUT

AMPIN

AMPIN+

V

SS



2002 Microchip TechnologyInc. DS21725B-page 1

TC1026CEP
TC1026CE
TC1026CE

8

DD

CMPOUT

7

REF (CMPIN)

6

CMPIN+

5

TC1026

1.0 ELECTRICAL
CHARACTERISTICS

*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage......................................................6.0V

operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affectdevice reliability.

Package Power Dissipation:

8-Pin PDIP ...............................................730 mW

8-Pin SOIC...............................................470 mW

8-Pin MSOP .............................................320 mW

Voltage on Any Pin..........(V

– 0.3V) to (VDD+0.3V)

SS

Junction Temperature.......................................+150°C

Operating Temperature Range.............-40°C to +85°C

StorageTemperature Range..............-55°C to +150°C

TC1026 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Typical values apply at 25°C and VDD=3.0V;TA= -40° to +85°C, and VDD= 1.8V to 5.5V,unless

otherwise specified.

Symbol Parameter Min Typ Max Units Test Conditions

V

DD

I

Q

Op Amp

A

VOL

V

ICMR

V

OS

I

B

V

OS (DRIF T)

GBWP Gain-Bandwidth Product — 90 — kHz V

SR Slew Rate — 35 — mV/µsec CL= 100pF

V

OUT

CMRR Common Mode Rejection Ratio 66 — — dB T

PSRR Power Supply Rejection Ratio 80 — — dB TA=25°C,VCM=V

I

SRC

I

SINK

En Input Noise Voltage — 10 — µVpp 0.1Hz to 10Hz
en Input Noise Voltage Density — 125 — nV/√Hz

Comparator

V

IR

V

OS

I

B

V

OH

V

OL

Supply Voltage 1.8 — 5.5 V
Supply Current — 12 18 µA All outputs unloaded

LargeSignal Voltage Gain — 100 — V/mV RL=10kΩ, VDD=5V
CommonModeInputRange VSS–0.2 — VDD+0.2 V
Input Offset Voltage ±100

±0.3

±500
±1.5

µVmVVDD=3V,VCM=1.5V,TA=25°C

T

= -40°C to 85°C

A

Input Bias Current -100 50 100 pA TA=25°C,VCM=VDDto V
Input Offset Voltage Drift — ±4 — µV/°C VDD=3V,VCM=1.5V

= 1.8V to 5.5V;

DD

V

O=VDD

R

L

Gain = 1
V

IN=VSS

to V

SS

=1MΩ to GND

to V

DD

Output Signal Swing VSS+0.05 — VDD–0.05 V RL=10kΩ

=25°C,VDD=5V

A

V

CM=VDD

VDD=1.8Vto5V

Output Source Current 3 — — mA VIN+=VDD,VIN-=V

OutputShorted to V
VDD=1.8V,Gain=1

OutputSInkCurrent — 125 — nV/Hz IN+ = VSS,IN-=V

OutputShorted to V
VDD=1.8V,Gain=1

to V

SS

SS

SS

SS

DD

DD

1kHz

Input Voltage Range VSS–0.2 — VDD+0.2 V
Input Offset Voltage -5

-5

—
—

+5
+5

mV VDD=3V,TA=25°C

T

= -40°C to 85°C

A

Input Bias Current –– — ±100 pA TA=25°C,IN+=VDDto V
OutputHighVoltage VDD–0.3 — — V RL=10kΩ to V
OutputLowVoltage — — 0.3 V RL=10kΩ to V

SS
DD

SS

SS

DS21725B-page 2



2002 Microchip TechnologyInc.

TC1026

TC1026 ELECTRICAL SPECIFICATIONS (C ONTINUED)

Electrical Characteristics: Typical values apply at 25°C and VDD=3.0V;TA= -40° to +85°C, and VDD= 1.8V to 5.5V,unless

otherwise specified.

Symbol Parameter Min Typ Max Units Test Conditions

PSRR Power Supply Rejection Ratio 60 — — dB T

I

SRC

I

SINK

t

PD1

t

PD2

Output Source Current 1 — — mA IN+ = V

OutputSink Current 2 — — mA IN+ = V

Response Time — 4 — µsec 100mV Overdrive, CL= 100pF
Response Time — 6 — µsec 10mV Overdrive, CL= 100pF

Voltage Reference

V

REF

I

REF(SOURCE)

I

REF(SINK)

C

L(REF)

Reference Voltage 1.176 1.200 1.221 V
Source Current 50 — — µA
Sink Current 50 — — µA
Load Capacitance — — 100 pF

=25°C

A

V

=1.8Vto5V

DD

DD

OutputShortedtoV
VDD=1.8V

SS

OutputShortedtoV
VDD=1.8V

SS

DD



2002 Microchip TechnologyInc. DS21725B-page 3

TC1026

2.0 PIN DESCRIPTION

The description of t he pins are listed in Table 2-1.

TABLE 2-1: PIN FUNCTION TABLE

Pin No.

(8-Pin PDIP)

(8-Pin MSOP)

(8-Pin SOIC)

1 AMPOUT Op amp output.
2 AMPIN- Inverting op amp input.
3 AMPIN+ Non-inverting op amp input.
4V
5 CMPIN+ Non-inverting comparator input.
6 REF(CMPIN) Invertingcomparator input and voltage reference output voltage.
7 CMPOUT Comparator output.
8V

Symbol Description

SS

DD

Negative power supply.

Positive power supply.

DS21725B-page 4



2002 Microchip TechnologyInc.

TC1026

3.0 DETAILED DESCRIPTION

The TC1026 i s one of a series of very low power,linear
building block products targeted at low voltage, single
supply applications. The TC1026 minimum operating
voltageis 1.8V, and typicalsupplycurrentis only 12µA.
It combines a comparator, an op amp and a voltage
reference in a single package.

3.1 Comparator

The TC1026 contains one comparator. The compara­tor’s input range extends beyond both supply voltages
by 200mV and the outputs will swing to within several
millivolts of the supplies depending on the load current
beingdriven.Theinvertinginputisinternallyconnected
to the output of the reference.

The c omparator exhibitspropagation delay and supply
current which are largely independent of supply
voltage. The low i nput bias current and offset voltage
make it suitable for high impedance precision
applications.

3.2 Operational Amplifier

The TC1026 contains one rail-to-rail op amp. The
amplifier’s i nput range extends beyond both supplies
by 200mV and the outputs will swing to within several
millivolts of the supplies depending on the load current
being driven.

The amplifier design is such that large signal gain, slew
rate and bandwidth are largely independent of supply
voltage.Thelowinput bias current and offsetvoltageof
the TC1026 make it suitable for precisionapplications.

3.3 Voltage Reference

A 2.0% tolerance, internally biased, 1.20V bandgap
voltage reference is included i n the TC1026. It has a
push-pull output capable of sourcing and sinking at
least 50µA.

4.0 TYPICAL APPLICATIONS

The TC1026 lends itself to a wide variety of
applications,particularlyin battery powered systems. It
typically finds application in power management,
processor supervisory and interface circuitry.

4.1 External Hysteresis (Comparator)

Hysteresis can be set externally with three resistors
using positive f eedback techniques (see Figure 4-1).
The design procedure for setting external comparator
hysteresisis as follows:

1. Choose the feedback resistor R
input bias current of the comparator is at most
100pA, the current through R
100nA (i.e., 1000 times the input bias current)
and retain excellent accuracy. The current
through R
R

where VRis a stable reference voltage.

C

at the comparator’s trip point is VR/

C

2. Determinethehysteresis voltage (V
the upper and lower thresholds.

3. Calculate R

as follows:

A

EQUATION 4-1:

V

HY



=

-----------

C



V

DD

RAR

4. Choose the rising threshold voltage for V
(V

).

THR

5. Calculate R

as follows:

B

EQUATION 4-2:

V

THR

1

1



–

-------



R

-----------------------------------------------------------=

R

B



---------------------



VRRA×

6. Verify the t hreshold voltages with these
formulas:

V

rising:

SRC

.Sincethe

C

canbesetto

C

HY

1

–

------­R

A

C

)between

SRC

EQUATION 4-3:

V

V

SRC

THR

falling:

VR()RA()




------­R

1

A

1



-------

++=



R

B

1



-------



R

C

EQUATION 4-4:

RAVDD×



V



2002 Microchip TechnologyInc. DS21725B-page 5

THF

V

THR

--------- ------------- ---

–=



R

C

TC1026

FIGURE 4-1: CO MPARATOR

EXTERNAL HYSTERESIS
CONFIGURATION

R

C

V

SRC

TC1026

R

A

R

B

V

DD

+

–

TC1026

Comparator

V

R

V

OUT

4.2 Precision Battery Monitor

Figure 4-2 is a precision battery low/battery dead
monitoring circuit. Typically, the battery low output
warns the user that a battery dead condition i s
imminent. Battery dead typically initiates a forced
shutdown to prevent operation at low internal supply
voltages(whichcan cause unstable system operation).

The circuit of Figure 4-2 uses two TC1026 devices and
only six external resistors. AMP 1 is a simple buffer
whileCMPTR1 and CMPTR2 provideprecisionvoltage
detection using V
R4 set the detection threshold for BATT LOW
resistors R1and R3 set the detection threshold for
BATT FAIL

. The component values shown assert
BATT LOW
(typical). Total current consumed by this circuit is
typically 28µA at 3V. Resistors R5 and R6 provide
hysteresis for comparators CMPTR1 and CMPTR2,
respectively.

as a reference. Resistors R2 and

R

while

at 2.2V (typical) and BATT FAIL at 2.0V

4.3 Voice Band Receive Filter

The majority of spectral energy for human voices is in
a 2.7kHz frequency band from 300Hz to 3kHz. To
properly recover a voice signal in applications such as
radios, c ellular phones and voice pagers, a low-power
bandpass filter that is matched to the human voice
spectrum can be implemented using Microchip’s
CMOS op amps. Figure 4-3 shows a unity-gain multi­pole Butterworth filter with ripple less than 0.15dB in
thehumanvoiceband.Thelower3dBcut-off frequency
is 70Hz (single-orderresponse),whilethe upper cut-off
frequency is 3.5kHz (fourth-order response).

4.4 Supervisory Audio Tone (SAT)
Filter for Cellular

Supervisory Audio Tones (SAT) provide a reliable
transmission path between cellular subscriber units
and base stations. The SAT tone functions much like
the current/voltage used in land l ine telephone systems
to indicate that a phone is off the hook. The SAT tone
may be one of three frequencies: 5970, 6000 or
6030Hz. A loss of SAT implies that channel conditions
are impaired, and if SAT is interrupted for more than 5
seconds, a cellular call is terminated.

Figure 4-4 shows a high Q (30) first order SAT
detection bandpass filter using Microchip’s CMOS op
amp architecture. This circuit nulls all frequencies
except the three SAT tones of interest.

DS21725B-page 6



2002 Microchip TechnologyInc.

FIGURE 4-2: PRECISION BATTERY MONITOR

TC1026

3V

Alkaline

+

V

DD

+

AMP1

–

TC1026

Op Amp

To System DC/DC

Converter

R2, 330k, 1%

R1, 270k, 1%

V

R

R4, 470k, 1%

R5, 7.5M

V

DD

+

CMPTR1

–

Comparator

V

DD

–

CMPTR2

R6, 7.5M

R3, 470k, 1%

Comparator

+

BATTLOW

BATTFAIL

FIGURE 4-3: MULTI-POLE BUTTERWORTH VOICE BAND RECEIVE FILTER

Gain = 0dB

Fch = 3.5kHz

-24dB/Octave

Fcl = 70Hz
+6dB/Octave

Passband Ripple
< 0.15dB

0.1µF

22.6k

6800pF

V

DD

+

–

Op Amp

22.6k

750pF

/2

V

DD

TC1026

V

IN

21.0k 21.0k 21.0k

2400pF

470pF

V

DD

Op Amp

+

–

V

OUT



2002 Microchip TechnologyInc. DS21725B-page 7

TC1026

FIGURE 4-4: SE COND ORDER S AT BANDPASS FILTER

Gain = 0dB

Q = 30

Q = F

C

BW (3dB)

FC = 6kHz

V

IN

TC1026

24.3k

11.2

V

DD

.036µF

/2

48.7k

VDD/2

.036µF

–

+

V

DD

Amp.

V

OUT

DS21725B-page 8



2002 Microchip TechnologyInc.

TC1026

5.0 TYPICAL CHARACTERISTICS

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range ( e.g., outside specified power supply range) and therefore outside the warranted range.

Comparator Propagation Delay

vs. Supply Voltage

7

= 25

T

°

C

A

= 100pF

C

L

sec)

µ

6

Overdrive = 10mV

5

4

3.5

4 4.5 5 5.5

3

DELAY TO RISING EDGE (

2

1.5

2

Overdrive = 50mV

2.5 3

SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V)

Comparator Propagation Delay

vs. Temperature

7

Overdrive = 100mV

sec)

µ

6

V

DD

V

5

4

DELAY TO FALLING EDGE (

3

-40°C85°C25°C
TEMPERATURE (°C)

DD

V

DD

V

DD

= 5V

= 4V

= 3V

= 2V

Comparator Propagation Delay

vs. Supply Voltage

7

= 25

T

°

C

A

= 100pF

C

L

sec)

µ

6

Overdrive = 10mV

5

4

Overdrive = 50mV

3

DELAY TO FALLING EDGE (

2

1.5

2

Overdrive = 100mV

2.5 3

3.5

4 4.5 5 5.5

Comparator Output Swing
vs. Output Source Current

2.5

T

= 25

°

C

A

2.0

(V)

OUT

- V

DD

V

1.5

1.0

V

= 1.8V

DD

.5

0

0

12345 6

I

(mA)

SOURCE

V

V

DD

DD

= 3V

= 5.5V

Comparator Propagation Delay

vs. Temperature

7

Overdrive = 100mV

sec)

µ

6

5

4

DELAY TO RISING EDGE (

3

-40°C85°C25°C
TEMPERATURE (°C)

V

V

V

V

Comparator Output Swing

vs. Output Sink Current

2.5

= 25

T

°

C

A

2.0

(V)

1.5

SS

- V

1.0

OUT

V

.5

0

012 345

I

SINK

V

DD

= 1.8V

V

DD

(mA)

V

= 5.5V

DD

DD

DD

DD

DD

= 5V

= 4V

= 2V

= 3V

= 3V

6

Comparator Output Short-Circuit

Current vs. Supply Voltage

60

50

40

30

20

10

Sourcing

0

OUTPUT SHORT-CIRCUIT CURRENT (mA)

0



2002 Microchip TechnologyInc. DS21725B-page 9

T

Sinking

12345 6

SUPPLY VOLTAGE (V)

= 85°C

A

TA = -40°C

TA = 25°C

= -40

A

T

= 85°C

T

A

T

A

C

°

= 25°C

1.240

1.220

1.200

1.180

1.160

REFERENCE VOLTAGE (V)

1.140

Reference Voltage vs.

Load Current

V

V

= 1.8V

DD

V

= 1.8V

DD

0

24

LOAD CURRENT (mA)

DD

= 3V

V

Sinking

Sourcing

V

V

= 3V

DD

6

DD

DD

8

= 5.5V

= 5.5V

4

3

2

1

0

10

0

SUPPLY AND REFERENCE VOLTAGES (V)

Line Transient

Response of V

V

DD

V

REF

100 200

TIME (µsec)

REF

300

400

TC1026

t

ge

)

(

)

p

e

)

5

0

5

0

5

0

0

000

500

000

025

)

(

)

n

ge

0

0

00

0

0

0

e

e

p

e

)

(

(

)

(

)

00

00

507501000

070

50017502000

00

0

000

5V

t

y

n

t

ge

)

(

)

5

0

5

0

5

30

35

0

C

l

e

)

070

(

)

n

y

)

(

)

0K

00

0

0

30

0

50

60

0

00K

5.0 TYPICAL CHARACTERISTICS (CONTINUED)

Op Amp DC Open-Loop Gai

vs. Supply Volta

14

12

dB

1

4

2

DC OPEN-LOOP GAIN

.01.02.0.04.0.0.

SUPPLY VOLTAGE (V

Op Amp Short-Circuit Curren

vs. Supply Volta

-

mA

-1

-1

-2

-2

UTPUT CURRENT

-

R

Op Amp DC Open-Loop Gain

vs. Tem

2

1

1

-4
TEMPERATURE (C

Op Amp Load Resistanc

vs. Load Capacitanc

1

10% Overshoo

1

k

AD

1

Region of Marginal Stabilit

Region of Stable Operatio

eratur

= 1.

Op Amp Short-Circuit Curren

vs. Supply Volta

4

4

mA

2

2

1

UTPUT CURRENT

1

.01.02.0.04.0.0.

I

SINK

SUPPLY VOLTAGE (V

Op Amp Small-Signal

mV

Transient Res

1

NPUT VOLTAGE

mV

1

ons

­.01.02.0.04.0.0.

SUPPLY VOLTAGE (V

Op Amp Large-Signa

mV

NPUT VOLTAGE

DS21725B-page 10

Transient Respons

10204

dB

SRR

TIME (sec

2

12501

Op Amp Power Supply Rejectio

Ratio (PSRR) vs. Frequenc

-1

=

-2

-

-4

-

-

-7
1

FREQUENCY (Hz

1

1

UTPUT VOLTAGE

10204



TIME (sec

2002 Microchip TechnologyInc.

5.0 TYPICAL CHARACTERISTICS (CONTINUED)

TC1026

Reference Voltage

vs. Supply Voltage

1.25

1.20

1.15

1.10

REFERENCE VOLTAGE (V)

1.05
1

23

SUPPLY VOLTAGE (V)

Supply Current vs. Supply Voltage

14

12

A)

µ

(

10

SUPPLY CURRENT

4

5

TA = 85°C

T

= 25°C

= -40°C

T

8

6

4

2

0

A

SUPPLY VOLTAGE (V)

A

645312



2002 Microchip TechnologyInc. DS21725B-page 11

TC1026

6.0 PACKAGING INFORMATION

6.1 Package Marking Information

Package marking data not available at this time.

6.2 Taping Form

Component Taping Orientation for 8-Pin MSOP Devices

PIN 1

User Direction of Feed

W

P

Standard Reel Component Orientation
for TR Suffix Device

Carrier Tape, Number of Components Per Reel and Reel Size

Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size

8-Pin MSOP 12 mm 8 mm 2500 13 in

Component Taping Orientation for 8-Pin SOIC (Narrow) Devices

User Direction of Feed

PIN 1

W

DS21725B-page 12

P

Standard Reel Component Orientation
for TR Suffix Device

Carrier Tape, Number of Components Per Reel and Reel Size

Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size

8-Pin SOIC (N) 12 mm 8 mm 2500 13 in



2002 Microchip TechnologyInc.

6.3 Package Dimensions

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

P

-Pin Plastic DI

TC1026

.260 (6.60
.240 (6.10

.045 (1.14
.030 (0.76

.200 (5.08
.140 (3.56

.150 (3.81
.115 (2.92

8-Pin MSOP

.400 (10.16

.348 (8.84

.110 (2.79
.090 (2.29

.022 (0.56
.015 (0.38

PIN 1

.122 (3.10)
.114 (2.90)

.070 (1.78
.040 (1.02

.197 (5.00)
.189 (4.80)

.040 (1.02
.020 (0.51

.310 (7.87
.290 (7.37

.015 (0.38
.008 (0.20

.400 (10.16

.310 (7.87

Dimensions: inches (mm)

.026 (0.65) TYP.

.122 (3.10)
.114 (2.90)

.043 (1.10)

MAX.

.016 (0.40)
.010 (0.25)



2002 Microchip TechnologyInc. DS21725B-page 13

.006 (0.15)
.002 (0.05)

6° MAX.

.028 (0.70)
.016 (0.40)

Dimensions: inches (mm)

.008 (0.20)
.005 (0.13)

TC1026

.

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

C

6.3 Package Dimensions (Continued)

-Pin SOI

.050 (1.27) TYP

.197 (5.00
.189 (4.80

.020 (0.51
.013 (0.33

.157 (3.99
.150 (3.81

.010 (0.25
.004 (0.10

.244 (6.20
.228 (5.79

.069 (1.75
.053 (1.35

.010 (0.25
.007 (0.18

.050 (1.27
.016 (0.40

Dimensions: inches (mm)

DS21725B-page 14



2002 Microchip TechnologyInc.

TC1026

Sales and Support

Data Sheets

Products supportedby a preliminary Data Sheet may have an erratasheet describingminoroperationaldifferences and recom­mendedworkarounds.To determine if an erratasheetexists for a particulardevice, please contactone of the following:

1. Your local Microchip sales office

2. TheMicrochip Corporate LiteratureCenter U.S. FAX:[phone]

3. The Microchip Worldwide Site (www.microchip.com)
Pleasespecify which device, revision of silicon and Data Sheet (includeLiterature #) you are using.

New Customer Notification System

Register on our web site (www.microchip.com/cn)to receive the most currentinformationon our products.

 2002 Microchip Technology Inc. DS21725B-page15

TC1026

NOTES:

DS21725B-page16  2002 Microchip Technology Inc.

TC1026

Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringementof
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’sproductsascriticalcom­ponents in life support systems is not authorized except with
express written approval by Microchip. No licenses are con­veyed, implicitly or otherwise, under any intellectual property
rights.

Trademarks

The Microchip name and logo, the Microchi p logo, FilterLab,
K

EELOQ,microID,MPLAB,PIC,PICmicro,PICMASTER,

PICSTART, PRO MATE, SEEVAL and The Embedded Control
SolutionsCompany areregiste red trademarksof MicrochipTech­nologyIncorp or ated in the U.S.A. and other countries .

dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, microPort,
Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM,
MXDEV, PICC, PICDEM, PICDEM.net , rfPIC, Select Mode
and Total Enduranceare trademarksof MicrochipTechnology
Incorporated in the U.S.A.

Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.

All other trademarks mentioned herein are property of their
respective companies.

© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.

Printed on recycled paper.

Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its

®

PICmicro
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systemsisISO 9001certified.



2002 Microchip TechnologyInc. DS21725B-page 17

8-bit MCUs, KEELOQ®code hopping

WORLDWIDE SALES AND SERVICE

AMERICAS

Corporate Office

2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: [phone] Fax: [phone]
Technical Support: 480-792-7627
Web Address: http://www.microchip.com

Rocky Mountain

2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: [phone] Fax: [phone]

Atlanta

500 Sugar Mill Road, Suite 200B
Atlanta, GA 30350
Tel: [phone] Fax: [phone]

Boston

2 Lan Drive, Suite 120
Westford, MA 01886
Tel: [phone] Fax: [phone]

Chicago

333 Pierce Road, Suite 180
Itasca, IL 60143
Tel: [phone] Fax: [phone]

Dallas

4570 Westgrove Drive, Suite 160
Addison, TX 75001
Tel: [phone] Fax: [phone]

Detroit

Tri-Atria Office Building
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: [phone] Fax: [phone]

Kokomo

2767 S. Albright Road
Kokomo, Indiana 46902
Tel: [phone] Fax: [phone]

Los Angeles

18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: [phone] Fax: [phone]

New York

150 Motor Parkway, Suite 202
Hauppauge, NY 11788
Tel: [phone] Fax: [phone]

San Jose

Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: [phone] Fax: [phone]

Toro nto

6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: [phone] Fax: [phone]

ASIA/PACIFIC

Australia

Microchip Technology Australia Pty Ltd
Suite 22, 41 Rawson Street
Epping 2121, NSW
Australia
Tel: [phone] Fax: [phone]

China - Beijing

Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
Bei Hai Wan Tai Bldg.
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: [phone] Fax: [phone]

China - Chengdu

Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401, 24th Floor,
Ming Xing Financial Tower
No. 88 TIDU Street
Chengdu 610016, China
Tel: [phone] Fax: [phone]

China - Fuzhou

Microchip Technology Consulting (Shanghai)
Co., Ltd., Fuzhou Liaison Office
Unit 28F, World Trade Plaza
No. 71 Wusi Road
Fuzhou 350001, China
Tel: [phone] Fax: [phone]

China - Shanghai

Microchip Technology Consulting (Shanghai)
Co., Ltd.
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: [phone] Fax: [phone]

China - Shenzh en

Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
Rm. 1315, 13/F , Shenzhen Kerry Centre,
Renminnan Lu
Shenzhen 518001, China
Tel: [phone] Fax: [phone]

Hong Kong

Microchip Technology Hongkong Ltd.
Unit 901-6, Tower2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: [phone] Fax: [phone]

India

Microchip Technology Inc.
India Liaison Office
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: [phone] Fax: [phone]

Japan

Microchip Technology Japan K.K.
Benex S-1 6F
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: [phone] Fax: [phone]

Korea

Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Tel: [phone] Fax: [phone]

Singapore

Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: [phone] Fax: [phone]

Ta iw an

Microchip Technology Taiwan
11F-3, No. 207
Tung Hua North Road
Taipei, 105, Taiwan
Tel: [phone] Fax: [phone]

EUROPE

Denmark

Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: [phone] Fax: [phone]

France

Microchip Technology SARL
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: [phone] Fax: [phone]

Germany

Microchip Technology GmbH
Gustav-Heinemann Ring 125
D-81739 Munich, Germany
Tel: [phone] Fax: [phone]

Italy

Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Milan, Italy
Tel: [phone] Fax: [phone]

United Kingdom

Arizona Microchip Technology Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire,England RG415TU
Tel: [phone] Fax: [phone]

03/01/02

DS21725B-page 18

*DS21725B*



2002 Microchip Technology Inc.