Datasheet T820-800W, T820-700W, T820-600W, T830-800W, T830-700W Datasheet (SGS Thomson Microelectronics)

T820-xxxW

®

FEATURES

I

■

■

■

■

■

=8A

TRMS

V

DRM=VRRM

= 600V to 800V
EXCELLENT SWITCHING PERFORMANCES
INSULATING VOLTAGE = 1500V

(RMS)

U.L. RECOGNIZED : E81734

DESCRIPTION

TheT820/830Wtriacsusehighperformanceglass
passivated chip technology, housed in a fully
molded plastic ISOWATT220AB package.

TM

The SNUBBERLESS

concept offers suppres­sion of R-C network, and is suitable for applica­tions such as phase control and static switch on
inductive and resistive loads.

T830-xxxW

SNUBBERLESS TRIAC

A

2

A

1

G

ISOWATT220AB

(Plastic)

A1

G

A2

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

I

T(RMS)

RMS on-state current

Tc= 95°C 8 A

(360° conduction angle)

I

TSM

Non repetitive surge peak on-state current

initial = 25°C )

(T

j

tp = 16.7 ms

(1 cycle, 60 Hz)

tp=10ms

88 A

100

(1/2 cycle, 50 Hz)

2

t

I

dI/dt

2

I

t Value (half-cycle, 50 Hz)

Critical rate of rise of on-state current
Gate supply : I

= 500 mA dIG/dt=1A/µs.

G

tp=10ms 50 A

Repetitive

20 A/µs

F=50Hz

Non Repetitive 100

T

stg

T

j

Tl

Storage temperature range
Operating junction temperature range

Maximum lead temperature for soldering during 10s at 4.5 mm

-40to+150

-40to+125
260 °C

from case

Symbol Parameter

T820 / T830-xxxW

600 700 800

2

°C

Unit

s

V

DRM

V

RRM

September 2001 - Ed: 1A

Repetitive peak off-state voltage

= 125°C

T

j

600 700 800 V

1/5

T820-xxxW / T830-xxxW

THERMAL RESISTANCES

Symbol Parameter Value Unit

Rth(j-a)
Rth(j-c)

Junction to ambient
Junction to case for A.C (360° conduction angle)

50 °C/W

3.1 °C/W

GATE CHARACTERISTICS (maximum values)
P

=1W PGM=10W(tp=20µs) IGM=4A(tp=20µs

G (AV)

ELECTRICAL CHARACTERISTICS

Symbol Test Conditions Quadrant T820 T830 Unit

I

GT

V

GT

V

GD

tgt

*

I

H

*

V

TM

VD=12V (DC) RL=33Ω
VD=12V (DC) RL=33Ω
VD=V

DRMRL

V

D=VDRMIG

/dt= 3Aµs

dl

G

I

= 100mA Gate open

T

I

= 11A tp= 380µs

TM

=3.3kΩ

=500mA

Tj= 25°C I-II-III MAX 20 30 mA
Tj= 25°C I-II-III MAX 1.5 V

Tj= 125°C I-II-III MIN 0.2 V

Tj= 25°C I-II-III TYP 2 µs

Tj= 25°C MAX 35 50
Tj= 25°C MAX 1.5 V

I

DRM

I

RRM

VDRM rated

rated

V

RRM

Tj= 25°C MAX 10 µA

Tj= 125°C MAX 2 mA

dV/dt *

(dV/dt)c *

* For either polarity of electrode A2 voltage with reference to electrode A1.
Note : Inusualapplicationswhere (dI/dt)c is below 4.5 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary to use

a snuber R-C network accross T820W / T830W triacs.

Linear slope up to

=67%V

V

D

DRM

Gate open

(dI/dt)c = 4.5 A/ms (see note)

Tj= 125°C MIN 200 300 V/µs

Tj= 125°C MIN 10 20 V/µs

2/5

T820-xxxW / T830-xxxW

Fig. 1: Maximum power dissipation versus RMS

on-state current.

P(W)

10

8

6

4

=30

180

=60

o

O

=90

= 120

o

o

=180

o

o

2

I(A)

0

012345678

T(RMS)

Fig. 3: RMS on-state current versus case temper­ature.

I(A)

T(RMS)

10

8

o

6

4

2

0

0 102030405060708090100110120130

=180

o

Tcase( C)

Fig. 2: Correlation between maximum powerdissi­pation and maximum allowable temperature
(Tamband Tcase) fordifferent thermal resistances
heatsink + contact.

o

P(W)

Tcase ( C)

10 -90

8

-95

-100

6

4

o

Rth = 0 C/W

o

2.5 C/W

o

5C/W

o

7.5 C/W

-105

-110

-115

2

o

Tamb(C)

0

0 102030405060708090100110120130

-120

-125

Fig. 4: Thermal transient impedance junction to
case and junction to ambient versus pulse dura­tion.

Zth/Rth

1

Zth(j-c)

0.1

Zth(j-a)

0.01

tp(s)

1E-3

1E-2 1E-1 1E+0

1E+1

1E+2 5E+2

Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature.

Igt[Tj]
Igt[Tj=25 C]

2.6

2.4

2.2

2.0

1.8

1.6

1.4
Ih

1.2

1.0

0.8

0.6

0.4

-40 -20 0 20 40 60 80 100 120 140

o

Igt

Tj( C)

Ih[Tj]
Ih[Tj=25 C]

o

o

Fig. 6: Non repetitive surge peak on-state current
versus number of cycles.

I(A)

TSM

100

80

60

40

20

Number of cycles

0

110100

Tj init ial = 25 C

o

1000

3/5

T820-xxxW / T830-xxxW

Fig. 7: Non repetitive surge peak on-state current

for a sinusoidal pulse with width : tp  10ms, and
corresponding value of I

I(A).I2t(A2s)

TSM

1000

100

10

1

110

2

t.

Tj initial = 25 C

I

TSM

I2t

o

tp(ms)

Fig. 8: On-state characteristics (maximum val­ues).

I(A)

TM

1000

Tj initial

o

100

10

1

0.1

00.511.522.533.544.555.56

25 C

Tj max

Tj max

Vto =0.9V

Rt =0.048

V(V)

TM

4/5

PACKAGE MECHANICAL DATA

ISOWATT220AB

T820-xxxW / T830-xxxW

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181
B 2.50 2.70 0.098 0.106

D 2.50 2.75 0.098 0.108

E 0.40 0.70 0.016 0.028

F 0.75 1.00 0.030 0.039
F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067

G 4.95 5.20 0.195 0.205

G1 2.40 2.70 0.094 0.106

H 10.00 10.40 0.394 0.409
L2 16.00 typ. 0.630 typ.
L3 28.60 30.60 1.125 1.205
L4 9.80 10.60 0.386 0.417
L6 15.90 16.40 0.626 0.646
L7 9.00 9.30 0.354 0.366

Diam 3.00 3.20 0.118 0.126

■

Cooling method : C

■ Marking : Type number

■

Weight : 2.1g

■

Recommended torque value : 0.55 m.N.

■

Maximum torque value : 0.70 m.N.

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change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap­proval of STMicroelectronics.

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