SGS Thomson Microelectronics T435-800W, T435-800H, T435-800T, T435-700W, T435-700T Datasheet

®

T4 Series

SNUBBERLESS™ & LOGIC LEVEL 4A TRIACS

MAIN FEATURES:

Symbol Value Unit

I

T(RMS)

V

DRM/VRRM

I

GTT (Q1)

4A

600 to 800 V

5 to 35 mA

DESCRIPTION

Based on ST’s Snubberless / Logic level technolo­gy providing h igh comm ut ation perfo rmances , t he
T4 series is suitable for use on AC inductive loads.
They are recommended for applications using

universal motors, electrovalves.... such as kitchen

aid equipments, power tools, dishwashers,...
Available in a fully insulated package, the
T4...-...W version complies with UL standards (ref.
E81734).

A1

A1

A2

G

A2

A2

G

DPAK

(T4-B)

TO-220AB

(T4-T)

A2

A2

G

A1

A2

A1

A2

G

IPAK

(T4-H)

A1

A2

G

ISOWATT 220AB

(T4-W)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

I

T(RMS)

I

TSM

²

I

dI/dt

I

GM

P

G(AV)

T

stg

T

June 2003 - Ed: 5

RMS on-state current (full sine wave) DPAK / IPAK

TO-220AB

Tc = 110°C

ISOWATT 220AB Tc = 105°C

Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)

tI

²

t Value for fusing

Critical rate of rise of on-state current

= 2 x IGT , tr ≤ 100 ns

I

G

F = 50 Hz t = 20 ms 30 A
F = 60 Hz t = 16.7 ms 31

tp = 10 ms 5.1

F = 120 Hz Tj = 125°C 50 A/µs

Peak gate current tp = 20 µs Tj = 125°C 4 A
Average gate power dissipation Tj = 125°C 1 W

Storage junction temperature range
Operating junction temp erature range

j

- 40 to + 150

- 40 to + 125

4

A

A

°C

²

s

1/8

T4 Series

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Symbol Test Conditions Quadrant T4

T405 T410 T435

I

GT

V

V

(1)

GT
GD

= 12 V RL = 30 Ω

V

D

VD = V

RL = 33 kΩ

DRM

I - II - III MAX. 5 10 35
I - II - III MAX. 1.3 V

I - II - III MIN. 0.2

Tj = 125°C

(2)

I

H

I

L

= 100 mA

I

T

IG = 1.2 I

GT

MAX. 10 15 35 mA

I - III MAX. 10 25 50 mA

II 15 30 60

dV/dt (2) V

= 67 %V

D

gate open Tj = 125°C

DRM

MIN. 20 40 400 V/µs

(dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C MIN. 1.8 2.7 - A/ms

(dV/dt)c = 10 V/µs Tj = 125°C 0.9 2.0 ­Without snubber

Tj = 125°C - - 2.5

STATIC CHARACTERISTICS

Symbol Test Conditions Value Unit

I

(2)

V

TM

(2)

V

to

(2)

R

d

I

DRM

I

RRM

Note 1: mi nimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1

= 5.5 A tp = 380 µs

TM

Threshold voltage Tj = 125°C MAX. 0.9 V
Dynamic resistance Tj = 125°C MAX. 120 mΩ
V

= V

DRM

RRM

Tj = 25°C MAX. 1.6 V

Tj = 25°C

Tj = 125°C 1 mA

MAX.

5µA

Unit

mA

V

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th(j-c)

R

th(j-a)

S = Copper surface under tab

T

2/8

Junction to case (AC) DPAK

IPAK

TO-220AB

ISOWATT220AB 4.0

Junction to ambient

S = 0.5 cm

²

DPAK 70

TO-220AB

ISOWATT220AB

IPAK 100

2.6

60

°C/W

°C/W

PRODUCT SELECTOR

T4 Serie s

Part Number

Voltage (xxx)

Sensitivity Type

Package

600 V 700 V 800 V

T405-xxxB X X X 5 mA Logic level DPAK
T405-xxxH X X X 5 mA Logic level IPAK
T405-xxxT X X X 5 mA Logic level TO-220AB
T405-xxxW X X X 5 mA Logic level ISOWATT220AB
T410-xxxB X X X 10 mA Logic level DPAK
T410-xxxH X X X 10 mA Logic level IPAK
T410-xxxT X X X 10 mA Logic level TO-220AB
T410-xxxW X X X 10 mA Logic level ISOWATT220AB
T435-xxxB X X X 35 mA Snubberless DPAK
T435-xxxH X X X 35 mA Snubberle ss IPAK
T435-xxxT X X X 35 mA Snubbe rle ss TO-220AB
T435-xxxW X X X 35 mA Snubberless ISOWATT220AB

ORDERING INFORMA T IO N

T 4 05 - 600 B (-TR)

TRIAC
SERIES

CURRENT:4A

SENSITIVITY:
05: 05mA
10: 10mA
35: 35mA

VOLTAGE:
600: 600V
700: 700V
800: 800V

PACKING MODE:
Blank:Tube

PACKAGE:
B: DPAK
H: IPAK
T:TO-220AB
W: ISOWATT220AB

-TR: DPAK Tape & Reel

OTHER INFORMATION

Part Number Marking Weight

Base

quantity

T4xx-yyyB T4xxyyyB 0.3 g 75 Tube
T4xx-yyyB-TR T4xxyyyB 0.3 g 2500 Tape & reel
T4xx-yyyH T4xxyyy 0.4 g 75 Tube
T4xx-yyyT T4xxyyyT 2.3 g 50 Tube
T4xx-yyyW T4xxyyyW 2.1 g 50 Tube

Note: xx = sensitivity , yyy = voltage

Packing

mode

3/8

T4 Series

Fig. 1: Maximum power dissipation versus RMS

on-state current (full cycle).

P(W)

6
5
4
3
2
1
0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

IT(RMS)(A)

Fig. 2-2: RMS on-state current versus ambient
temperature (printed circuit FR4, copper thick-

ness: 35µm),full cycle.

IT(RMS)(A)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0
0 25 50 75 100 125

Tamb(°C)

DPAK

(S=0.5cm²)

Fig. 2-1: RMS on-state current case versus tem­perature (full cycle).

IT(RMS)(A)

4.5

4.0

3.5

3.0

TO-220AB/DPAK/IPAK

ISOWATT220AB

2.5

2.0

1.5

1.0

0.5

0.0
0 25 50 75 100 125

Tc(°C)

Fig. 3: Relative variation of thermal impedance
versus pulse duration.

K=[Zth/Rth]

1E+0

1E-1

1E-2

1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Rth(j-c)

TO-220AB/DPAK/IPAK

ISOWATT220AB

Rth(j-a)

TO-220AB/ISOWATT220AB

DPAK/IPAK

tp(s)

Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).

IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]

2.5

2.0

1.5

1.0

0.5

0.0

4/8

IGT

IH & IL

Tj(°C)

-40 -20 0 20 40 60 80 100 120 140

Fig. 5: Surge peak on-state current versus
number of cycles.

ITSM(A)

35
30
25

Non repetitive
Tj initial=25°C

20
15
10

5
0

1 10 100 1000

Repetitive

Tc=110°C

Number of cycles

t=20ms

One cycle

T4 Serie s

Fig. 6: Non-repetitive surge peak on-state

current for a sinusoidal pulse with width

tp < 10ms, and corresponding value of I²t.

ITSM (A), I²t (A²s)

500

100

10

dI/dt limitation:

50A/µs

Tj initial=25°C

ITSM

I²t

tp (ms)

1

0.01 0.10 1.00 10.00

Fig. 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.1 1.0 10.0 100.0

(dV/dt)c (V/µs)

T405

T435

T410

Fig. 7: On-state characteristics (maximum
values).

ITM(A)

30.0

10.0

Tj=Tj max.

1.0

Tj max.:

Vto= 0.90 V

Ω

VTM(V)

0.1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Rd= 120 m

Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.

(dI/dt)c [Tj] / (dI/dt)c [Tj specified]

6
5
4
3
2
1
0

0 25 50 75 100 125

Tj(°C)

Fig. 10: DPAK thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35µm).

Rth(j-a) (°C/W)

100

90
80
70
60
50
40
30
20
10

0

0 4 8 1216202428323640

S(cm²)

DPAK

5/8

T4 Series

PACKAGE MECHANICAL DATA

DPAK (Plastic)

DIMENSIONS

R

FOOTPRINT DIMENSIO NS (in millimeters)
DPAK (Plastic)

REF.

A 2.20 2.40 0.086 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.212

C 0.45 0.60 0.017 0.023
C2 0.48 0.60 0.018 0.023

R

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.251 0.259

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.397
L2 0.80 typ. 0.031 typ.
L4 0.60 1.00 0.023 0.039

R 0.2 typ. 0.007 typ.
V2 0° 8° 0° 8°

Millimeters Inches

Min. Max Min. Max.

6.7

6.7

3

3

1.61.6

2.32.3

6/8

PACKAGE MECHANICAL DATA

ISOWATT220AB (Plastic)

T4 Serie s

DIMENSIONS

PACKAGE MECHANICAL DATA

TO-220AB (Plastic)

REF .

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181
B 2.50 2.70 0.098 0.106
D 2.50 2.75 0.098 0.108
E 0.40 0.70 0.016 0.028

F 0.75 1.00 0.030 0.039
F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067

G 4.95 5.20 0.195 0.205

G1 2.40 2.70 0.094 0.106

H 10.00 10.40 0.394 0.409
L2 16.00 typ. 0.630 typ.
L3 28.60 30.60 1.125 1.205
L4 9.80 10.60 0.386 0.417
L6 15.90 16.40 0.626 0.646
L7 9.00 9.30 0.354 0.366

Diam 3.00 3.20 0.118 0.126

DIMENSIONS

B

L

I

A

l4

C

b2

F

REF.

A 15.20 15.90 0.598 0.625
a1 3.75 0.147
a2 13.00 14.00 0.511 0.551

B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051

Millimeters Inches

Min. T yp. Max. Min. Typ. Max.

C 4.40 4.60 0.173 0.181

a1

l3

l2

a2

c2

c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107

e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259

I 3.75 3.85 0.147 0.151

b1

e

M

c1

I4 15.80 16.40 16.80 0.622 0.646 0.661

L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102

7/8

T4 Series

PACKAGE MECHANICAL DATA

IPAK (Plastic)

DIMENSIONS

REF.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A

E

B2

L2

C2

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033

D

B5 0.3 0.035
B6 0.95 0.037

C 0.45 0.6 0.017 0.023

H

L1

L

B6

B3
B

V1

A1

C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

B5

G

C
A3

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
V1 10° 10°

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to change wi t hout notice. T hi s publicati on supersede s and replaces all in formation previously supplied. STM i croelectro ni cs products are not
authori zed for use as cr i tical compo nents in life support devices or systems without express written approval of STMicroelectronics.

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