T2550H-600T
®
June 1999 - Ed: 1
HIGH TEMPERATURE TRIAC FOR HOT APPLIANCE S
Symbol Parameter Value Unit
V
RRM
V
DRM
Repetitive peak-off state voltage
Tj = 150 °C 600 V
I
T(RMS)
RMS on-state current
(360° conducti on angle)
Tc = 120 °C25 A
I
TSM
Non repetitive surge peak on-state current
(Tj initial = 25°C )
tp = 8.3 ms 260 A
tp = 10 ms 250
I
2
t
I2t Value for fusing
tp = 10 ms 310 A2s
dI/dt
Critical rate of rise of on -state curren t
(Tj initial = 25 °C)
I
G
= 60 mA tr ≤100ns
Repetitive
F = 50 H z
20 A/µs
Non
Repetitive
100
T
stg
T
j
Storage and operating j unction tempera ture range
- 40 to + 150
°
C
ABSOL UTE M AXIMU M RA TIN GS
TO-220
HIGH JUNCTION TEMPERATURE :
Tj (MAX) = 150°C
I
T(RMS)
= 25 A
V
DRM/VRRM
= 600 V
SENS IT IVIT Y : IGT (MAX) = 50mA
MAIN FEATURES :
Specifically developed for use in high temperature
and harsh environments, the T2550H-600T triac is
perfectly suited to driving heat ing elements found
in hot appliances such as ovens, electric ranges or
halogen ranges.
The T2550H-600T, which is specified for use in
temperature up to Tj = 150 ° C, of fers the additional
benefit of improved thermal resistance (1 °C/W).
Thanks to this feature, heatsink dim ensionning can
be optimized to suit typical conditions in such
applications. The devices surge features, which
have proven to be highly performing, ensure safe
operation under peak inrush current conditions for example, in halogen ranges.
DESCRIPTION
A1
A2
A1
A2
A2
G
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Symbol Test Conditions Quadrant Value Unit
I
GT
VD=12V (DC) RL=33 Ω
Tj = 25 °C I - II - III MIN 5 mA
MAX 50
V
GT
VD=12V (DC) RL=33 Ω
Tj = 25 °C I - II - III MAX 1.3 V
V
GD
VD=V
DRM RL
=3.3 kΩ
Tj = 150 °C I - II - III MIN 0.15 V
I
H
IT= 500 mA Gate open
Tj = 25 °C MAX 75 mA
I
L
IG = 1.2 I
GT
Tj = 25 °C I - II - III MAX 90 mA
V
TM
ITM = 35 A tp = 380 µs
Tj = 25 °C MAX 1.5 V
I
DRM
VD = V
DRM
Tj = 25 °C MAX 5
µ
A
I
RRM
VR = V
RRM
Tj = 150 °C MAX 8.5 mA
VD / VR = 400 V (operating application
conditions)
Tj = 150 °C MAX 5.5
dV/dt
VD= 67% V
DRM
Gate open
Tj = 150 °C MIN 250 V/µs
(dI/dt)c
(dV/dt)c = 5 V/µs
Tj = 150 °C MIN 10 A/ms
Without snubber
7
Symbol Parameter Value Unit
Rth(j-c)
Junction to case for DC
1.3
°
C/W
Rth(j-c)
Junction to case for AC
360 ° conduction ang le (F = 50 Hz)
1
°
C/W
THERMAL RESISTANCES
P
G(AV)
= 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs)
GATE CHARACTERISTICS
T 25 50 H 600 T-
Triac Current Gate
Sensitivity
Voltage
High
Temperature
Triac
Package
T:TO-220
ORDER INFORMATION
T2550H-600T
2/5
0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0
0
5
10
15
20
25
30
35
IT(RMS)(A)
P(W)
α = 30°
α = 60°
α = 90°
α = 120°
α = 180°
Fig. 1:
Maximum power dissipation versus RMS
on-state current.
0 25 50 75 100 125 150
0
5
10
15
20
25
30
35
Tamb(°C)
P(W) Tcase (°C)
150
120
130
140
α = 180°
Rth=3°C/W
Rth=2°C/W
Rth=1°C/W
Rth=0°C/W
Fig. 2:
Correlat i on betw ee n maxim um pow er dissi pation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances
heatsink+contact.
0 25 50 75 100 125 150
0
5
10
15
20
25
30
Tcase(°C)
IT(RMS)(A)
α = 180°
Fig. 3:
RMS on-state current versus case tempera-
ture.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.10
1.00
tp(s)
K=[Zth/Rth]
Zth(j-c)
Zth(j-a)
Fig. 4:
Relative variation of thermal impedance
versus pulse duration.
-40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
Tj(°C)
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]
IGT
IH & IL
Fig. 5:
Relative variation of gate trigger current,
holding current and latching current ver sus junction temperature (typical values).
1 10 100 1000
0
20
40
60
80
100
120
140
160
180
200
220
Number of cycles
ITSM(A)
Tj initial=25°C
F=50Hz
Non repetitive
Repetitive
Fig. 6:
Surge peak on-state current versus number
of cycles.
T2550H-600 T
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0.01 0.10 1.00 10.00
10
100
1000
2000
tp(ms)
ITSM(A),I²t(A²s)
Tj initial=25°C
ITSM
I²t
dI/dt limitation:
100A/µs
Fig. 7:
Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and corresponding value of I
2
t.
25 50 75 100 125 150
0
1
2
3
4
5
6
7
8
Tj(°C)
(dI/dt)c [Tj]/(dI/dt)c [Tj = 150°C]
Fig. 9:
Relative variation of critical rate of decrease
of main current versus junction temperature (typical values).
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1
10
100
300
VTM(V)
ITM(A)
Tj=25°C
Tj max.:
Vto = 0.85 V
Rd = 19 m Ω
Tj=Tj max.
Fig. 8:
On-state characteristics (maximum values).
50 75 100 125 150
1E-3
1E-2
1E-1
1E+0
1E+1
Tj(°C)
IDRM/IRRM(mA)
VD=VR=600V
VD=VR=400V
VD=VR=200V
Fig. 10:
Typical variation of leakage current versus
junction temperature for different v alues of blocking
voltage.
02468101214161820
0
100
200
300
400
500
600
700
800
Rth(c-a)(°C/W)
VDRM/VRRM(V)
Tj=150°C
Rth(j-c)=1°C/W
Fig. 11:
Acc eptab l e re peti tiv e pe ak off s tat e v olta g e
versus thermal resistance case-ambient.
T2550H-600T
4/5
PACKAGE MEC HANICAL DA TA
TO-220 (Plastic)
M
B
l4
C
b2
a2
l2
c2
l3
b1
a1
A
F
L
I
e
c1
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 15.20 15.90 0.598 0.625
a1 3.75 0.147
a2 13.00 14.00 0.511 0.551
B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107
e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259
I 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2 .60 0.102
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwis e under any patent or patent rights of STMicroelec tronics. Specifications menti oned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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T2550H-600 T
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