SGS Thomson Microelectronics T2550H-600T Datasheet
T2550H-600T
®
June 1999 - Ed: 1
HIGH TEMPERATURE TRIAC FOR HOT APPLIANCE S
Symbol Parameter Value Unit
V
RRM
V
DRM
Repetitive peak-off state voltage
Tj = 150 °C 600 V
I
T(RMS)
RMS on-state current
(360° conducti on angle)
Tc = 120 °C25 A
I
TSM
Non repetitive surge peak on-state current
(Tj initial = 25°C )
tp = 8.3 ms 260 A
tp = 10 ms 250
I
2
t
I2t Value for fusing
tp = 10 ms 310 A2s
dI/dt
Critical rate of rise of on -state curren t
(Tj initial = 25 °C)
I
G
= 60 mA tr ≤100ns
Repetitive
F = 50 H z
20 A/µs
Non
Repetitive
100
T
stg
T
j
Storage and operating j unction tempera ture range
- 40 to + 150
°
C
ABSOL UTE M AXIMU M RA TIN GS
TO-220
HIGH JUNCTION TEMPERATURE :
Tj (MAX) = 150°C
I
T(RMS)
= 25 A
V
DRM/VRRM
= 600 V
SENS IT IVIT Y : IGT (MAX) = 50mA
MAIN FEATURES :
Specifically developed for use in high temperature
and harsh environments, the T2550H-600T triac is
perfectly suited to driving heat ing elements found
in hot appliances such as ovens, electric ranges or
halogen ranges.
The T2550H-600T, which is specified for use in
temperature up to Tj = 150 ° C, of fers the additional
benefit of improved thermal resistance (1 °C/W).
Thanks to this feature, heatsink dim ensionning can
be optimized to suit typical conditions in such
applications. The devices surge features, which
have proven to be highly performing, ensure safe
operation under peak inrush current conditions for example, in halogen ranges.
DESCRIPTION
A1
A2
A1
A2
A2
G
1/5
Symbol Test Conditions Quadrant Value Unit
I
GT
VD=12V (DC) RL=33 Ω
Tj = 25 °C I - II - III MIN 5 mA
MAX 50
V
GT
VD=12V (DC) RL=33 Ω
Tj = 25 °C I - II - III MAX 1.3 V
V
GD
VD=V
DRM RL
=3.3 kΩ
Tj = 150 °C I - II - III MIN 0.15 V
I
H
IT= 500 mA Gate open
Tj = 25 °C MAX 75 mA
I
L
IG = 1.2 I
GT
Tj = 25 °C I - II - III MAX 90 mA
V
TM
ITM = 35 A tp = 380 µs
Tj = 25 °C MAX 1.5 V
I
DRM
VD = V
DRM
Tj = 25 °C MAX 5
µ
A
I
RRM
VR = V
RRM
Tj = 150 °C MAX 8.5 mA
VD / VR = 400 V (operating application
conditions)
Tj = 150 °C MAX 5.5
dV/dt
VD= 67% V
DRM
Gate open
Tj = 150 °C MIN 250 V/µs
(dI/dt)c
(dV/dt)c = 5 V/µs
Tj = 150 °C MIN 10 A/ms
Without snubber
7
Symbol Parameter Value Unit
Rth(j-c)
Junction to case for DC
1.3
°
C/W
Rth(j-c)
Junction to case for AC
360 ° conduction ang le (F = 50 Hz)
1
°
C/W
THERMAL RESISTANCES
P
G(AV)
= 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs)
GATE CHARACTERISTICS
T 25 50 H 600 T-
Triac Current Gate
Sensitivity
Voltage
High
Temperature
Triac
Package
T:TO-220
ORDER INFORMATION
T2550H-600T
2/5
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