SGS Thomson Microelectronics T2535-600G Datasheet
FEATURES
HIGHCOMMUTATION(dI/dt)c> 13 A/ms
withoutsnubber
HIGHSTATICdV/dt > 500 V/µs
T2535-600G
HIGH PERFORMANCE TRIAC
A2
DESCRIPTION
The T2535-600G triac uses a high performance
SNUBBERLESS
TM
technology.
The part is intended for general purpose
applicationsusing surfacemounttechnology.
D
2
PAK
A1
A2
G
ABSOLUTERATINGS (limitingvalues)
Symbol Parameter Value Unit
V
DRM
V
RRM
I
T(RMS)
Repetitivepeakoff-statevoltage
RMSon-statecurrent
Tj= 125°C 600 V
Tc= 95°C25A
(360°conductionangle)
I
TSM
Non repetitivesurge peak on-statecurrent
tp = 8.3ms 262 A
(Tj initial= 25°C)
tp = 10 ms 250
2
tI
I
2
t Value(half-cycle,50 Hz) tp = 10 ms 312.5 A2s
dI/dt Criticalrate of rise ofon-statecurrent
Repetitive
F = 50 Hz
I
=500 mA dIG/dt = 1 A/µs.
G
Non Repetitive 100
T
stg
T
j
Storagetemperature range
Operatingjunctiontemperaturerange
Tl Maximumtemperaturefor solderingduring 10s 260
May 1998 - Ed:1E
20 A/µs
-40, +150
-40, +125
°C
°
C
1/5
T2535-600G
THERMALRESISTANCES
Symbol Parameter Value Unit
2
Rth(j-a) Junctionto ambiant(S=1cm
Rth(j-c) Junctionto casefor DC 1.4 °C/W
)45°C/W
Rth(j-c)
GATECHARACTERISTICS
P
=1W PGM= 10 W (tp = 20 µs) IGM=4A(tp=20µs)
G (AV)
Junctionto casefor AC 360°conductionangle(F=50Hz)
(maximumvalues)
1.0
ELECTRICALCHARACTERISTICS
Symbol Test Conditions Quadrant Sensitivity Unit
I
GT
VD=12V (DC) RL=33
Ω
Tj= 25°C I-II-III MIN 2 mA
MAX 35
V
GT
V
GD
*I
I
H
I
L
V
TM*
I
DRM
I
RRM
VD=12V (DC) RL=33Ω
VD=V
DRMRL
= 500mA Gateopen Tj= 25°C MAX 50 mA
T
IG=1.2 I
=3.3kΩ Tj= 125°C I-II-III MIN 0.2 V
GT
Tj= 25°C I-II-III MAX 1.3 V
Tj= 25°C I-II-III MAX 80 mA
ITM= 35A tp=380µs Tj= 25°C MAX 1.5 V
VD=V
VR=V
DRM
RRM
Tj= 25°C MAX 5
Tj=125°C MAX 3 mA
°
C/W
µ
A
dV/dt* Linearslope up toV
=67%V
D
DRM
Tj= 125°C MIN 500 V/µs
Gateopen
(dI/dt)c* Withoutsnubber Tj= 125°C MIN 13 A/ms
* For either polarity of electrodeA2 voltagewith referenceto electrode A1.
ORDERINGINFORMATION
Add ”-TR” suffixfor Tape & Reelshipment
T 25 35 - 600 G
PACKAGE:
2
G=D
VOLTAGE
PAK
2/5
TRIAC
CURRENT
SENSITIVITY
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