Datasheet T1650-600G, T1635-600G Datasheet (SGS Thomson Microelectronics)

T1635-600G T1650-600G
®
May 1998 - Ed: 2A
HIGH PERFORMANCE TRIAC
Symbol Parameter Value Unit
V
DRM
RRM
Repetitive peak off-state voltage
Tj = 125°C 600 V
I
T(RMS)
RMS on-state current (360° conduction angle)
Tc= 105°C 16 A
I
TSM
Non repetitive surge peak on-state current (Tj initial = 25°C)
tp = 8.3ms 170 A tp = 10 ms 160
I
2
tI
2
t Value for fusing tp = 10 ms 128 A2s
dI/dt
Critical rate of rise of on-state current I
G
= 500 mA dIG /dt = 1 A /µs.
Repetitive
F = 50 H z
20 A/µs
Non Repetitive 100
T
stg
T
j
Storage temperature range Operating junction temperature range
- 40, + 150
- 40, + 125
°
C
T
Maximum temperature for soldering dur ing 10s
260
°
C
ABSOLUTE RATINGS
(limiting values)
D
2
PAK
HIGH COMMUTATION PERFORMANCES SNUBBERLESS
TM
TECHNOLOGY HIGH NOISE I MMUNI TY (dV /dt) HIGH I
TSM
FEATURES
The T1635-600G and T1650-600G triacs are using high performance SNUBBERLESS technology.
They are intended for AC control applications using surface mount technology.
These devices are perfectly suited where high commutation and surge performances are required.
DESCRIPTION
A1
A2
G
A2
1/5
P
G (AV)
= 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs)
GATE CHARACTERISTICS
(maximum values)
Symbol Parameter Value Unit
Rth(j-a) Junction to ambient (S=1cm
2
)45°C/W
Rth(j-c) Junction to case for DC 1.6
°
C/W
Rth(j-c)
Junction to case for AC 360° conduction angle (F=50Hz)
1.2
°
C/W
THERMAL RE SISTA NC ES
Symbol Test Conditions Quadrant T1635 T1650 Unit
I
GT
VD=12V (DC) RL=33
Tj= 25°C I-II-III MIN 2 mA
MAX 35 50
V
GT
VD=12V (DC) RL=33
Tj= 25°CI-II-IIIMAX 1.3 V
V
GD
VD=V
DRM
RL=3.3kΩ Tj= 125°C I-II-III MIN 0.2 V
I
H
*I
T
= 100mA Gate open Tj= 25°C MAX 35 50 mA
I
L
IG = 1.2 I
GT
Tj = 2 5°C I-III MAX 50 60 mA
II MAX 80 120
V
TM *
ITM= 22.5A tp= 380µs Tj= 25°CMAX1.5V
I
DRM
VD = V
DRM
Tj= 25°CMAX5
µ
A
I
RRM
VR = V
RRM
Tj= 125°C MAX 2 mA
dV/dt * Linear slope up to V
D
=67%V
DRM
Gate open
Tj= 125°C MIN 500 1000 V/µs
(dI/dt)c *
Without snubber
Tj= 125°C MIN 8.5 14 A/ms
* For either polarity of electrode A2 voltage with reference to electrode A1.
ELECTRICAL CHARACT E RISTICS
ORDERING INFORMATION
T 16 35 - 600 G
TRIAC
CURRENT
PACKAGE : G = D2PAK
VOLTAGE
SENSITIVITY
Add "-TR" suffix for Tape & Reel shipment
T1635-600G / T1650-600G
2/5
0246810121416
0
5
10
15
20
P(W)
α
=180°
α
=120°
α
=90°
α
=60°
α
=30°
I (A)
T(RMS)
Fig 1:
Maximum power dissipation versus RMS
on-state current.
0 25 50 75 100 125
0
2
4
6
8
10
12
14
16
18
I (A)
T(RMS)
α
=180°
Tcase(°C)
Fig. 3:
RMS on-state current versus case tem-
perature.
-40 -20 0 20 40 60 80 100 120 140
0.0
0.5
1.0
1.5
2.0
2.5
I ,I [Tj]/I ,I [Tj=25°C]
GT H GT H
I
GT
I
H
Tj(°C)
Fig. 5:
Relative variation of gate trigger current and holding current versus junction temperature (typi­cal values).
0 20 40 60 80 100 120 140
0
5
10
15
20
P(W) Tcase (°C)
125
α
=180°
Rth=0°C/W
Rth=1°C/WRth=2°C/W
Rth=4°C/W
105
110
115
120
Tamb(°C)
Fig. 2:
Correlation between maximum power dissi­pation and maximum allowable temperatures (T
amb
and T
case
) for different thermal resistances
heatsink+contact.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.10
1.00
K=[Zth/Rth]
Zth(j-c)
Zth(j-a)
tp(s)
Fig. 4:
Relative variation of thermal impedance
versus pulse duration.
1 10 100 1000
0
20
40
60
80
100
120
140
160
I (A)
TSM
Tj initial=25°C F=50Hz
Number of cycles
Fig. 6:
Non repetitive surge peak on-stat e current
versus number of cycles.
T1635-600G / T1650-600G
3/5
12 510
100
200
500
1000
I (A),I²t(A²s)
TSM
Tj initial=25°C
I
TSM
I²t
tp(ms)
Fig. 7:
Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and cor­responding value of I
2
t.
0 4 8 1216202428323640
0
10
20
30
40
50
60
70
80
Rth(j-a) (°C/W)
S(Cu) (cm²)
Fig. 9:
Thermal resistance junction to ambient ver­sus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm).
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1
10
100
200
I (A)
TM
Tj=25°C
Tj max.: Vto=0.77V Rt=30 m
Tj=Tj max.
V (V)
TM
Fig. 8:
On-state characteristics (maximum values).
0 40 80 120 160 200 240 280 320 360
T (°C)
250
200
150
100
50
0
Epoxy FR4
board
Metal-backed
board
245°C 215°C
t (s)
Fig. 10:
Typical reflow soldering heat profile, either
for mounting on FR4 or metal-backed boards.
T1635-600G / T1650-600G
4/5
PACKAGE MECHANICAL DAT A
D
2
PAK
A
C2
D
R
2.0 MIN. FLA TZONE
A2
V2
C
A1
G
L
L3
L2
B
B2
E
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.30 4.60 0.169 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037 B2 1.25 1.40 0.048 0.055
C 0.45 0.60 0.017 0.024 C2 1.21 1.36 0.047 0.054
D 8.95 9.35 0.352 0.368
E 10.00 10.28 0.393 0.405
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069
R 0.40 0.016
V2
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the conseque nces of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwis e under any patent or patent rights of STMicroelectro nics. Specifications men tioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectro nic s products are not authorized for use as critical components in li fe s upport devices or systems without express w ri tt en ap­proval of STMicroelectronics.
© 1998 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The
Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
FOOT PRINT DIMENSIONS
(in millimeters)
TYPE MARKING
T1635-600G T1635
600G
T1650-600G T1650
600G
MARKING
8.90
3.70
1.30
5.08
16.90
10.30
PACKING
Tube : 50 units Tape and reel : 500 unit s
T1635-600G / T1650-600G
5/5
Loading...