SGS Thomson Microelectronics T1230W, T1220W Datasheet

T1220W



FEATURES

=12A

I

TRMS

V

DRM=VRRM

=400V to 700V
EXCELLENTSWITCHINGPERFORMANCES
INSULATINGVOLTAGE= 1500V

(RMS)

U.L. RECOGNIZED: E81734

DESCRIPTION

The T1220/1230W triacs use high performance
glasspassivatedchip technology,housedin afully
moldedplasticISOWATT220ABpackage.

TM

The SNUBBERLESS

concept offers suppres­sion of R-C network, and is suitable for applica­tions such as phase control and static switch on
inductiveand resistive loads.

T1230W

SNUBBERLESS TRIAC

A

2

A

1

G

A

1

A

2

G

ISOWATT220AB

(Plastic)

ABSOLUTERATINGS (limiting values)

Symbol Parameter Value Unit

I

T(RMS)

RMS on-statecurrent

Tc=85 °C12A

(360° conductionangle)

I

TSM

Non repetitivesurgepeak on-state current
(T

initial= 25°C)

j

tp = 16.7 ms

(1 cycle, 60 Hz)

tp =10 ms

132 A

155

(1/2 cycle, 50 Hz)

2

tI

I

dI/dt Criticalrateof rise of on-state current

2

t Value(half-cycle,50 Hz) tp =10 ms 120 A2s

Gate supply: I

=500mA dIG/dt =1A/µs.

G

Repetitive

F = 50Hz

20 A/µs

NonRepetitive 100

T

stg

T

j

Storagetemperaturerange
Operatingjunctiontemperature range

Tl Maximumlead temperaturefor soldering during 10s at4.5 mm

- 40to +150

- 40to +125
260 °C

from case

Symbol Parameter

T1220/ 1230-xxxW

400 600 700

°C

Unit

V

DRM

V

RRM

April 1995

Repetitivepeak off-statevoltage
T

=125°C

j

400 600 700 V

1/5

T1220W / 1230W

THERMAL RESISTANCES

Symbol Parameter Value Unit

Rth(j-a) Junctionto ambient 50 °C/W
Rth(j-c) Junction to casefor A.C (360°conductionangle) 2.8 °C/W

GATE CHARACTERISTICS (maximumvalues)
P

=1W PGM=10 W(tp =20 µs) IGM=4A(tp=20µs)

G (AV)

ELECTRICALCHARACTERISTICS

Symbol TestConditions Quadrant T1220 T1230 Unit

I

GT

V

GT

V

GD

tgt V

I

*I

H

V

TM

I

DRM

I

RRM

VD=12V (DC) RL=33Ω

Tj= 25°C I-II-III MAX 20 30 mA
VD=12V (DC) RL=33Ω Tj= 25°C I-II-III MAX 1.5 V
VD=V

DRMRL

D=VDRMIG

/dt= 3Aµs

dl

G

= 100mA Gateopen Tj=25°C MAX 35 50

T

=3.3kΩ Tj= 125°C I-II-III MIN 0.2 V

=500mA

Tj= 25°C I-II-III TYP 2 µs

*ITM= 17A tp= 380µs Tj=25°C MAX 1.5 V

VDRMrated
V

rated

RRM

Tj= 25°C MAX 10 µA

Tj= 125°C MAX 2 mA

dV/dt* Linearslopeup to

=67%V

V

D

DRM

Gate open

Tj= 125°C MIN 200 300 V/µs

(dV/dt)c* (dI/dt)c=6.5 A/ms (seenote) Tj= 125°C MIN 10 20 V/µs

* For either polarity of electrode A2voltage with referenceto electrode A1.
Note : Inusual applications where (dI/dt)c is below 6.5 A/ms,the (dV/dt)c isalways lowerthan10V/µs, and, therefore, it is unnecessary touse

a snuber R-C network accross T1220W / T1230W triacs.

2/5



T1220W / 1230W

Fig.1 : Maximum power dissipation versus RMS

on-state current.

P(W)

16
14
12
10

8
6

=30

O

180

=60

o

=90

o

= 120

o

= 180

o

o

4
2
0

0123456789101112

I (A)

T(RMS)

Fig.3: RMSon-state currentversuscasetempera-

ture.

I (A)

T(RMS)

14
12
10

8
6
4

= 180

o

Fig.2: Correlationbetweenmaximumpower dissi­pation and maximum allowable temperature
(TambandTcase)fordifferentthermal resistances
heatsink+contact.

o

P(W)

16 -80
14
12

Tcase ( C)

o

Rth = 0 C/W

o

2C/W

o

4C/W

o

6C/W

-90

10

8
6

-100

-110

4
2
0

0 102030405060708090100110120130

o

Tamb ( C)

-120

Fig.4 : Thermal transient impedance junction to

case and junction to ambient versus pulse dura­tion.

Zth/Rth

1

Zth(j-c)

0.1

Zth( j-a )

0.01

2
0

0 102030405060708090100110120130

o

Tcase( C)

Fig.5: Relativevariationof gatetriggercurrentand

holding current versus junction temperature.

Igt[Tj]
Igt[Tj=25 C]

2.6

2.4

2.2

2.0

1.8

1.6

1.4
Ih

1.2

1.0

0.8

0.6

0.4

-40 -20 0 20 40 60 80 100 120 140

o

Igt

Tj( C)

Ih[Tj]
Ih[Tj=25 C ]

o

o



tp(s )

1E-3

1E-2 1E-1 1E+0

1E+1

1E+2 5E+2

Fig.6 : Non repetitive surge peak on-state current

versusnumber ofcycles.

I (A)

TSM

140

120

100

80

60

40

20

Number of cycles

0

1 10 100 1000

Tj initial = 25 C

o

3/5

T1220W / 1230W

Fig.7 : Non repetitivesurge peak on-state current

for a sinusoidalpulse with width : tp ≤ 10ms,and
correspondingvalue ofI

I (A). I2t(A2s)

TSM

1000

2

t.

Tj initial = 2 5 C

I

o

TSM

I2t

Fig.8: On-statecharacteristics(maximumvalues).

I (A)

TM

1000

Tj initial

o

100

25 C

100

10

Tj max

tp(ms)

10

110

1

00.511.522.533.544.555.56

Tj max

Vto =0.9V

Rt =0.03 1

V (V)

TM

4/5



PACKAGEMECHANICAL DATA

ISOWATT220AB

T1220W / 1230W

DIMENSIONS

REF.

A 10 10.4 0.393 0.409
B 15.9 16.4 0.626 0.645

B1 9.8 10.6 0.385 0.417

C 28.6 30.6 1.126 1.204
D 16 typ 0.630 typ

E 9 9.3 0.354 0.366

H 4.4 4.6 0.173 0.181

I 3 3.2 0.118 0.126

J 2.5 2.7 0.098 0.106

L 0.4 0.7 0.015 0.027
M 2.5 2.75 0.098 0.108
N 4.95 5.2 0.195 0.204

N1 2.4 2.7 0.094 0.106

O 1.15 1.7 0.045 0.067

P 0.75 1 0.030 0.039

Millimeters Inches

Min. Max. Min. Max.

Cooling method : C
Marking: Typenumber
Weight: 2.1g
Recommendedtorquevalue: 0.55m.N.
Maximum torque value : 0.70 m.N.

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences ofuse of such information nor for any infringement of patentsor other rights ofthird parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSONMicroelectronics productsare not authorized foruse as critical componentsin life supportdevices or systemswithout express
written approval of SGS-THOMSON Microelectronics.

 1995 SGS-THOMSON Microelectronics -Printedin Italy - All rightsreserved.

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