SGS Thomson Microelectronics T1030W, T1020W Datasheet

T1020W
FEATURES
=10A
I
TRMS
V
DRM=VRRM
=400V to 800V EXCELLENTSWITCHINGPERFORMANCES INSULATINGVOLTAGE=1500V
(RMS)
U.L. RECOGNIZED: E81734
DESCRIPTION
The T1020/1030W triacs use high performance glasspassivatedchip technology,housedin a fully moldedplastic ISOWATT220ABpackage.
TM
The SNUBBERLESS
concept offers suppres­sion of R-C network, and is suitable for applica­tions such as phase control and static switch on inductiveand resistive loads.
T1030W
SNUBBERLESS TRIAC
A
2
A
1
G
A
1
A
2
G
ISOWATT220AB
(Plastic)
ABSOLUTERATINGS (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
RMS on-statecurrent
Tc= 90°C10A
I
TSM
Non repetitivesurgepeak on-statecurrent (T
initial= 25°C)
j
tp = 16.7 ms
(1 cycle, 60 Hz)
tp = 10 ms
110 A
125
(1/2 cycle,50 Hz)
2
tI
I
dI/dt Criticalrate of rise of on-state current
2
t Value(half-cycle,50 Hz) tp = 10 ms 78 A2s
Gate supply : I
=500 mA dIG/dt = 1A/µs.
G
Repetitive
F = 50Hz
20 A/µs
NonRepetitive 100
T
stg
T
j
Storagetemperaturerange Operatingjunctiontemperature range
Tl Maximumlead temperaturefor soldering during 10s at4.5 mm
- 40 to + 150
- 40 to + 125 260 °C
from case
Symbol Parameter
T1020 / 1030-xxxW
400 600 700 800
°C
Unit
V
DRM
V
RRM
November 1996
Repetitivepeak off-statevoltage T
=125°C
j
400 600 700 800 V
1/5
T1020W / 1030W
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth(j-a) Junctionto ambient 50 °C/W Rth(j-c) Junction to case for A.C(360°conductionangle) 3.0 °C/W
GATE CHARACTERISTICS (maximumvalues) P
=1W PGM=10 W(tp =20 µs) IGM=4A(tp=20µs)
G (AV)
ELECTRICALCHARACTERISTICS
Symbol TestConditions Quadrant T1020 T1030 Unit
I
GT
V
GT
V
GD
tgt V
I
*I
H
V
TM
I
DRM
I
RRM
VD=12V (DC) RL=33
Tj= 25°C I-II-III MAX 20 30 mA VD=12V (DC) RL=33 Tj= 25°C I-II-III MAX 1.5 V VD=V
DRMRL
D=VDRMIG
/dt= 3Aµs
dl
G
= 100mA Gate open Tj= 25°C MAX 35 50
T
=3.3k Tj= 125°C I-II-III MIN 0.2 V
=500mA
Tj= 25°C I-II-III TYP 2 µs
*ITM= 14A tp=380µs Tj=25°C MAX 1.5 V
V V
DRM RRM
rated rated
Tj= 25°C MAX 10 µA
Tj= 125°C MAX 2 mA
dV/dt* Linearslopeup to
=67%V
V
D
DRM
Gate open
Tj= 125°C MIN 200 300 V/µs
(dV/dt)c* (dI/dt)c= 5.3 A/ms (seenote) Tj= 125°C MIN 10 20 V/µs
* Foreither polarity of electrode A2voltage with reference to electrode A1. Note : Inusual applications where (dI/dt)c isbelow 5.3 A/ms, the (dV/dt)c is always lowerthan 10V/µs, and, therefore,it isunnecessary touse
a snuberR-C network accross T1020W / T1030W triacs.
2/5
T1020W / 1030W
Fig.1 : Maximum power dissipation versus RMS
on-state current.
P(W)
14 12 10
8 6
=30
4 2 0
012345678910
O
180
=60
o
=90
o
= 120
o
= 180
o
o
I (A)
T(RMS)
Fig.3: RMSon-state currentversuscase tempera-
ture.
I (A)
T(RMS)
12
10
o
8
= 180
Fig.2: Correlationbetweenmaximumpowerdissi­pation and maximum allowable temperature (TambandTcase)fordifferentthermalresistances heatsink+ contact.
o
P(W)
14 -85 12 10
Tcase ( C)
o
Rth = 0 C/W
o
2.5 C/W
o
5C/W
o
7C/W
-95
8
-105
6 4 2 0
0 102030405060708090100110120130
o
Tamb ( C)
-115
-125
Fig.4 : Thermal transient impedance junction to
case and junction to ambient versus pulse dura­tion.
Zth/Rth
1
Zth(j-c)
0.1
6
4
2
0
0 102030405060708090100110120130
o
Tcase( C)
Fig.5: Relativevariationofgatetriggercurrentand
holding currentversusjunction temperature.
Igt[Tj] Igt[Tj=25 C]
2.6
2.4
2.2
2.0
1.8
1.6
1.4 Ih
1.2
1.0
0.8
0.6
0.4
-40 -20 0 20 40 60 80 100 120 140
o
Igt
Tj( C)
Ih[Tj] Ih[Tj=25 C ]
o
o
Zth( j-a)
0.01
tp(s )
1E-3
1E-2 1E-1 1E+0
1E+1
1E+2 5E+2
Fig.6 : Non repetitivesurge peak on-state current
versusnumber ofcycles.
I (A)
TSM
120
100
80
60
40
20
Number of cycles
0
1101001000
Tj initial = 25 C
o
3/5
T1020W / 1030W
Fig.7 : Non repetitivesurge peak on-statecurrent
for a sinusoidal pulse with width : tp 10ms, and correspondingvalueof I
I (A). I2t(A2s)
TSM
1000
100
10
2
t.
Tj initial = 25 C
o
I2t
I
TSM
Fig.8: On-statecharacteristics(maximum values).
I (A)
TM
1000
Tj initial
o
100
10
25 C
Tj max
tp(ms)
1
110
1
00.511.522.533.544.555.56
Tj max
Vto =0.9V
Rt = 0.03 8
V (V)
TM
4/5
PACKAGEMECHANICAL DATA
ISOWATT220AB
T1020W / 1030W
DIMENSIONS
REF.
A 10 10.4 0.393 0.409 B 15.9 16.4 0.626 0.645
B1 9.8 10.6 0.385 0.417
C 28.6 30.6 1.126 1.204 D 16 typ 0.630 typ
E 9 9.3 0.354 0.366
H 4.4 4.6 0.173 0.181
I 3 3.2 0.118 0.126
J 2.5 2.7 0.098 0.106
L 0.4 0.7 0.015 0.027 M 2.5 2.75 0.098 0.108 N 4.95 5.2 0.195 0.204
N1 2.4 2.7 0.094 0.106
O 1.15 1.7 0.045 0.067
P 0.75 1 0.030 0.039
Millimeters Inches
Min. Max. Min. Max.
Cooling method: C Marking: Typenumber Weight: 2.1g Recommendedtorquevalue : 0.55 m.N. Maximum torque value :0.70 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patentsor other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied. SGS-THOMSON Microelectronics productsare not authorized foruse ascritical componentsinlife support devices orsystemswithout express written approvalofSGS-THOMSON Microelectronics.
1996 SGS-THOMSON Microelectronics - Printed in Italy - All rightsreserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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