SGS Thomson Microelectronics T1030W, T1020W Datasheet

T1020W



FEATURES

=10A

I

TRMS

V

DRM=VRRM

=400V to 800V
EXCELLENTSWITCHINGPERFORMANCES
INSULATINGVOLTAGE=1500V

(RMS)

U.L. RECOGNIZED: E81734

DESCRIPTION

The T1020/1030W triacs use high performance
glasspassivatedchip technology,housedin a fully
moldedplastic ISOWATT220ABpackage.

TM

The SNUBBERLESS

concept offers suppres­sion of R-C network, and is suitable for applica­tions such as phase control and static switch on
inductiveand resistive loads.

T1030W

SNUBBERLESS TRIAC

A

2

A

1

G

A

1

A

2

G

ISOWATT220AB

(Plastic)

ABSOLUTERATINGS (limiting values)

Symbol Parameter Value Unit

I

T(RMS)

RMS on-statecurrent

Tc= 90°C10A

(360° conductionangle)

I

TSM

Non repetitivesurgepeak on-statecurrent
(T

initial= 25°C)

j

tp = 16.7 ms

(1 cycle, 60 Hz)

tp = 10 ms

110 A

125

(1/2 cycle,50 Hz)

2

tI

I

dI/dt Criticalrate of rise of on-state current

2

t Value(half-cycle,50 Hz) tp = 10 ms 78 A2s

Gate supply : I

=500 mA dIG/dt = 1A/µs.

G

Repetitive

F = 50Hz

20 A/µs

NonRepetitive 100

T

stg

T

j

Storagetemperaturerange
Operatingjunctiontemperature range

Tl Maximumlead temperaturefor soldering during 10s at4.5 mm

- 40 to + 150

- 40 to + 125
260 °C

from case

Symbol Parameter

T1020 / 1030-xxxW

400 600 700 800

°C

Unit

V

DRM

V

RRM

November 1996

Repetitivepeak off-statevoltage
T

=125°C

j

400 600 700 800 V

1/5

T1020W / 1030W

THERMAL RESISTANCES

Symbol Parameter Value Unit

Rth(j-a) Junctionto ambient 50 °C/W
Rth(j-c) Junction to case for A.C(360°conductionangle) 3.0 °C/W

GATE CHARACTERISTICS (maximumvalues)
P

=1W PGM=10 W(tp =20 µs) IGM=4A(tp=20µs)

G (AV)

ELECTRICALCHARACTERISTICS

Symbol TestConditions Quadrant T1020 T1030 Unit

I

GT

V

GT

V

GD

tgt V

I

*I

H

V

TM

I

DRM

I

RRM

VD=12V (DC) RL=33Ω

Tj= 25°C I-II-III MAX 20 30 mA
VD=12V (DC) RL=33Ω Tj= 25°C I-II-III MAX 1.5 V
VD=V

DRMRL

D=VDRMIG

/dt= 3Aµs

dl

G

= 100mA Gate open Tj= 25°C MAX 35 50

T

=3.3kΩ Tj= 125°C I-II-III MIN 0.2 V

=500mA

Tj= 25°C I-II-III TYP 2 µs

*ITM= 14A tp=380µs Tj=25°C MAX 1.5 V

V
V

DRM
RRM

rated
rated

Tj= 25°C MAX 10 µA

Tj= 125°C MAX 2 mA

dV/dt* Linearslopeup to

=67%V

V

D

DRM

Gate open

Tj= 125°C MIN 200 300 V/µs

(dV/dt)c* (dI/dt)c= 5.3 A/ms (seenote) Tj= 125°C MIN 10 20 V/µs

* Foreither polarity of electrode A2voltage with reference to electrode A1.
Note : Inusual applications where (dI/dt)c isbelow 5.3 A/ms, the (dV/dt)c is always lowerthan 10V/µs, and, therefore,it isunnecessary touse

a snuberR-C network accross T1020W / T1030W triacs.

2/5



T1020W / 1030W

Fig.1 : Maximum power dissipation versus RMS

on-state current.

P(W)

14
12
10

8
6

=30

4
2
0

012345678910

O

180

=60

o

=90

o

= 120

o

= 180

o

o

I (A)

T(RMS)

Fig.3: RMSon-state currentversuscase tempera-

ture.

I (A)

T(RMS)

12

10

o

8

= 180

Fig.2: Correlationbetweenmaximumpowerdissi­pation and maximum allowable temperature
(TambandTcase)fordifferentthermalresistances
heatsink+ contact.

o

P(W)

14 -85
12
10

Tcase ( C)

o

Rth = 0 C/W

o

2.5 C/W

o

5C/W

o

7C/W

-95

8

-105

6
4
2
0

0 102030405060708090100110120130

o

Tamb ( C)

-115

-125

Fig.4 : Thermal transient impedance junction to

case and junction to ambient versus pulse dura­tion.

Zth/Rth

1

Zth(j-c)

0.1

6

4

2

0

0 102030405060708090100110120130

o

Tcase( C)

Fig.5: Relativevariationofgatetriggercurrentand

holding currentversusjunction temperature.

Igt[Tj]
Igt[Tj=25 C]

2.6

2.4

2.2

2.0

1.8

1.6

1.4
Ih

1.2

1.0

0.8

0.6

0.4

-40 -20 0 20 40 60 80 100 120 140

o

Igt

Tj( C)

Ih[Tj]
Ih[Tj=25 C ]

o

o

Zth( j-a)

0.01

tp(s )

1E-3

1E-2 1E-1 1E+0

1E+1

1E+2 5E+2

Fig.6 : Non repetitivesurge peak on-state current

versusnumber ofcycles.

I (A)

TSM

120

100

80

60

40

20

Number of cycles

0

1101001000

Tj initial = 25 C

o

3/5



T1020W / 1030W

Fig.7 : Non repetitivesurge peak on-statecurrent

for a sinusoidal pulse with width : tp ≤ 10ms, and
correspondingvalueof I

I (A). I2t(A2s)

TSM

1000

100

10

2

t.

Tj initial = 25 C

o

I2t

I

TSM

Fig.8: On-statecharacteristics(maximum values).

I (A)

TM

1000

Tj initial

o

100

10

25 C

Tj max

tp(ms)

1

110

1

00.511.522.533.544.555.56

Tj max

Vto =0.9V

Rt = 0.03 8

V (V)

TM

4/5



PACKAGEMECHANICAL DATA

ISOWATT220AB

T1020W / 1030W

DIMENSIONS

REF.

A 10 10.4 0.393 0.409
B 15.9 16.4 0.626 0.645

B1 9.8 10.6 0.385 0.417

C 28.6 30.6 1.126 1.204
D 16 typ 0.630 typ

E 9 9.3 0.354 0.366

H 4.4 4.6 0.173 0.181

I 3 3.2 0.118 0.126

J 2.5 2.7 0.098 0.106

L 0.4 0.7 0.015 0.027
M 2.5 2.75 0.098 0.108
N 4.95 5.2 0.195 0.204

N1 2.4 2.7 0.094 0.106

O 1.15 1.7 0.045 0.067

P 0.75 1 0.030 0.039

Millimeters Inches

Min. Max. Min. Max.

Cooling method: C
Marking: Typenumber
Weight: 2.1g
Recommendedtorquevalue : 0.55 m.N.
Maximum torque value :0.70 m.N.

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patentsor other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied.
SGS-THOMSON Microelectronics productsare not authorized foruse ascritical componentsinlife support devices orsystemswithout express
written approvalofSGS-THOMSON Microelectronics.

 1996 SGS-THOMSON Microelectronics - Printed in Italy - All rightsreserved.

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