SGS Thomson Microelectronics T1030W, T1020W Datasheet
T1020W
FEATURES
=10A
I
TRMS
V
DRM=VRRM
=400V to 800V
EXCELLENTSWITCHINGPERFORMANCES
INSULATINGVOLTAGE=1500V
(RMS)
U.L. RECOGNIZED: E81734
DESCRIPTION
The T1020/1030W triacs use high performance
glasspassivatedchip technology,housedin a fully
moldedplastic ISOWATT220ABpackage.
TM
The SNUBBERLESS
concept offers suppression of R-C network, and is suitable for applications such as phase control and static switch on
inductiveand resistive loads.
T1030W
SNUBBERLESS TRIAC
A
2
A
1
G
A
1
A
2
G
ISOWATT220AB
(Plastic)
ABSOLUTERATINGS (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
RMS on-statecurrent
Tc= 90°C10A
(360° conductionangle)
I
TSM
Non repetitivesurgepeak on-statecurrent
(T
initial= 25°C)
j
tp = 16.7 ms
(1 cycle, 60 Hz)
tp = 10 ms
110 A
125
(1/2 cycle,50 Hz)
2
tI
I
dI/dt Criticalrate of rise of on-state current
2
t Value(half-cycle,50 Hz) tp = 10 ms 78 A2s
Gate supply : I
=500 mA dIG/dt = 1A/µs.
G
Repetitive
F = 50Hz
20 A/µs
NonRepetitive 100
T
stg
T
j
Storagetemperaturerange
Operatingjunctiontemperature range
Tl Maximumlead temperaturefor soldering during 10s at4.5 mm
- 40 to + 150
- 40 to + 125
260 °C
from case
Symbol Parameter
T1020 / 1030-xxxW
400 600 700 800
°C
Unit
V
DRM
V
RRM
November 1996
Repetitivepeak off-statevoltage
T
=125°C
j
400 600 700 800 V
1/5
T1020W / 1030W
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth(j-a) Junctionto ambient 50 °C/W
Rth(j-c) Junction to case for A.C(360°conductionangle) 3.0 °C/W
GATE CHARACTERISTICS (maximumvalues)
P
=1W PGM=10 W(tp =20 µs) IGM=4A(tp=20µs)
G (AV)
ELECTRICALCHARACTERISTICS
Symbol TestConditions Quadrant T1020 T1030 Unit
I
GT
V
GT
V
GD
tgt V
I
*I
H
V
TM
I
DRM
I
RRM
VD=12V (DC) RL=33Ω
Tj= 25°C I-II-III MAX 20 30 mA
VD=12V (DC) RL=33Ω Tj= 25°C I-II-III MAX 1.5 V
VD=V
DRMRL
D=VDRMIG
/dt= 3Aµs
dl
G
= 100mA Gate open Tj= 25°C MAX 35 50
T
=3.3kΩ Tj= 125°C I-II-III MIN 0.2 V
=500mA
Tj= 25°C I-II-III TYP 2 µs
*ITM= 14A tp=380µs Tj=25°C MAX 1.5 V
V
V
DRM
RRM
rated
rated
Tj= 25°C MAX 10 µA
Tj= 125°C MAX 2 mA
dV/dt* Linearslopeup to
=67%V
V
D
DRM
Gate open
Tj= 125°C MIN 200 300 V/µs
(dV/dt)c* (dI/dt)c= 5.3 A/ms (seenote) Tj= 125°C MIN 10 20 V/µs
* Foreither polarity of electrode A2voltage with reference to electrode A1.
Note : Inusual applications where (dI/dt)c isbelow 5.3 A/ms, the (dV/dt)c is always lowerthan 10V/µs, and, therefore,it isunnecessary touse
a snuberR-C network accross T1020W / T1030W triacs.
2/5
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