SGS Thomson Microelectronics STZTA42 Datasheet
■ SILICON EPITA X IAL PLANA R NPN
TRANSISTORS
■ MINIATURE PLASTIC PACKAGE FOR
APPLICAT ION IN SURFACE MOUNT ING
CIRCUITS
■ GENERAL P URPOSE MAINLY INT ENDED
FOR USE IN MEDIUM P OWER INDUSTRIA L
APPLICAT ION AND FOR AUDI O AMP LIFIER
OUTPUT STAGE
■ PNP COMPLEM ENT IS ST ZTA 92
STZTA42
MEDIUM POWER AMPLIFIER
ADVANCE DATA
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) 300 V
CBO
Collector-Emitter Voltage (IB = 0) 300 V
CEO
Emitter-Base Voltage (IC = 0) 6 V
EBO
Collector Current 0.1 A
I
C
Collector Peak Current 0.3 A
CM
Total Dissipation at Tc = 25 oC2W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
October 1995
1/4
STZTA42
THERMAL DATA
R
R
• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
thj-amb
thj-tab
•
Thermal Resistance Junction-Ambient Max
•
Thermal Resistance Junction-Collecor Tab Max
62.5
8
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
V
(BR)CBO
Collector Cut-off
Current (I
= 0)
E
Collector-Base
= 200 V 100 nA
V
CB
I
= 100 µA 300 V
C
Breakdown Voltage
(IE = 0)
V
(BR)CEO
∗ Collector-Emitter
I
= 1 mA 300 V
C
Breakdown Voltage
(I
= 0)
B
V
(BR)EBO
Emitter-Base
I
= 100 µA 6 V
E
Breakdown Voltage
(I
= 0)
C
V
CE(sat)
∗ Collector-Emitter
IC = 20 mA IB = 2 mA 0.5 V
Saturation Voltage
V
BE(sat)
∗ Base-Emitter
IC = 20 mA IB = 2 mA 0.9 V
Saturation Voltage
h
∗ DC Current Gain IC = 1 mA VCE = 10 V
FE
f
C
CEO
Transition Frequency IC = 10 mA VCE = 20 V f = 50 MHz 50 MHz
T
Collector Emitter
I
= 10 mA VCE = 10 V
C
I
= 30 mA VCE = 10 V
C
VCE = 20 V f = 1 MHz 50 pF
25
40
40
Capacitance
∗ Pulsed: Pulse durat ion = 300 µs, dut y cycl e ≤ 1.5 %
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