SGS Thomson Microelectronics STZT5401 Datasheet
■ SILICON EPI TAX IA L PLANAR PN P
TRANSISTORS
■ MINIATURE PLA STI C PACKA G E FOR
APPLICAT ION IN SURFACE MOUNT ING
CIRCUITS
■ GENERAL PURPOSE MAINLY INTENDED
FOR USE IN MEDIUM PO W ER INDUS T RIA L
APPLICAT ION AND FOR AUDI O AMPLIF IER
OUTPUT STAGE
STZT5401
MEDIUM POWER AMPLIFIER
ADVANCE DATA
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
P
T
Collector-Base Voltage (IE = 0) -180 V
CBO
Collector-Emitter Voltage (IB = 0) -160 V
CEO
Emitter-Base Voltage (IC = 0) -5 V
EBO
Collector Current -0.6 A
I
C
Total Dissipation at Tc = 25 oC -1.5 W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
October 1997
1/4
STZT5401
THERMAL DATA
R
R
• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
thj-amb
thj-tab
•
Thermal Resistance Junction-Ambient Max
•
Thermal Resistance Junction-Collecor Tab Max
62.5
8
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
(BR)CBO
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
E
Collector-Base
= -120 V -50 nA
V
CB
= -3 V -50 nA
V
EB
I
= -100 µA -160 V
C
Breakdown Voltage
(IE = 0)
V
(BR)CEO
∗ Collector-Emitter
= -1 mA -150 V
I
C
Breakdown Voltage
(I
= 0)
B
V
(BR)EBO
Emitter-Base
= -10 µA -5 V
I
C
Breakdown Voltage
(I
= 0)
C
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = -1 mA VCE = -5 V
FE
h
Small Signal Current
fe
IC = -10 mA IB = -1 mA
I
= -50 mA IB = -5 mA
C
IC = -10 mA IB = -1 mA
I
= -50 mA IB = -5 mA
C
-0.2
-0.5
-1
-1
50
I
= -10 mA VCE = -5 V
C
I
= -50 mA VCE = -5 V
C
60
50
240
IC = -1 mA VCE = -10 V f = 1 KHz 40 200
Gain
f
C
CBO
Transition Frequency IC = -10 mA VCE = -10 V f = 1 MHz 100 400 MHz
T
Collector-Base
IE = 0 VCB = -10 V f = 1 MHz 6 pF
Capacitance
F Noise Figure f = 1 KHz ∆F = 200 Hz R
I
= -0.25 mA VCE = -5 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
C
= 1KΩ
G
5dB
V
V
V
V
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