SGS Thomson Microelectronics STZT2907A Datasheet
■ SILICON EPITA X IAL PLANA R NPN
TRANSISTORS
■ MINIATURE PLASTIC PACKAGE FOR
APPLICAT ION IN SURFACE MOUNT ING
CIRCUITS
■ GENERAL P URPOSE MAINLY INT ENDED
FOR USE IN MEDIUM P OWER INDUSTRIA L
APPLICAT ION AND FOR AUDI O AMP LIFIER
OUTPUT STAGE
■ PNP COMPLEMENTS ARE STZT2222 AND
STZT2222A RESPEC TIVE LY
STZT2907
STZT2907A
MEDIUM POWER AMPLIFIER
ADVANCE DATA
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STZT2907 STZT2907A
V
V
V
P
T
Collector-Base Voltage (IE = 0) -60 -60 V
CBO
Collector-Emitter Voltage (IB = 0) -40 -60 V
CEO
Emitter-Base Voltage (IC = 0) -5 V
EBO
Collector Current -0.8 A
I
C
Total Dissipation at Tc = 25 oC -1.5 W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
October 1995
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STZT2907/STZ T2907A
THERMAL DATA
R
R
• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
thj-amb
thj-tab
•
Thermal Resistance Junction-Ambient Max
•
Thermal Resistance Junction-Collecor Tab Max
83.3
10
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEX
I
BEX
V
(BR)CBO
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (V
= 0.5V)
BE
Base Cut-off Current
(V
= 0.5V)
BE
Collector-Base
= rated V
V
CB
VCB = rated V
= -30 V for STZT2222A -50 nA
V
CE
= -30 V for STZT2222A -50 nA
V
CE
= -10 µA-60V
I
C
CBO
CBO
T
= 125 oC
amb
-20
-10
Breakdown Voltage
(I
= 0)
E
V
∗ Collector-Emitter
(BR)CEO
Breakdown Voltage
(I
= 0)
B
V
(BR)EBO
Emitter-Base
= -10 mA
I
C
for STZT2907
for STZT2907A
I
= -10 µA-5V
E
-40
-60
Breakdown Voltage
(I
= 0)
C
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = -0.1 mA VCE = -10 V
FE
f
C
CBO
Transition Frequency IC = -10 mA VCE = -10 V f = 100 MHz 200 MHz
T
Collector-Base
IC = -150 mA IB = -15 mA
I
= -500 mA IB = -50 mA
C
IC = -150 mA IB = -15 mA
I
= -500 mA IB = -50 mA
C
for STZT2907
for STZT2907A
I
= -1 mA VCE = -10 V
C
for STZT2907
for STZT2907A
I
= -10 mA VCE = -10 V
C
for STZT2907
for STZT2907A
I
= -150 mA VCE = -10 V
C
I
= -500 mA VCE = -10 V
C
for STZT2907
for STZT2907A
35
75
50
100
75
100
100
10
50
-0.4
-1.6
-1.3
-2.6
300
IE = 0 VCB = -10 V f = 1 MHz 8 pF
Capacitance
C
EBO
Emitter-Base
IC = 0 VEB = -2 V f = 1 MHz 30 pF
Capacitance
t
t
t
t
∗ Pulsed: Pulse duration = 300 µs, dut y cycle ≤ 1.5 %
Delay Time IC = -150 mA IB1 = -15 mA
d
t
Rise Time 40 ns
r
Turn-on Time 45 ns
on
Storage Time IC = -150 mA IB1 = -IB1 = -15 mA
s
Fall Time 30 ns
t
f
Turn-off Time 100 ns
off
V
CC
V
CC
= -30 V
= -30 V
10 ns
80 ns
nA
µA
V
V
V
V
V
V
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