■ SILICON EPITA X IAL PLANA R NPN
TRANSISTORS
■ MINIATURE PLASTIC PACKAGE FOR
APPLICAT ION IN SURFACE MOUNT ING
CIRCUITS
■ GENERAL P URPOSE MAINLY INT ENDED
FOR USE IN MEDIUM P OWER INDUSTRIA L
APPLICAT ION AND FOR AUDI O AMP LIFIER
OUTPUT STAGE
■ PNP COMPLEMENTS ARE STZT2907 AND
STZT2907A RESPEC TIVE LY
STZT2222
STZT2222A
MEDIUM POWER AMPLIFIER
ADVANCE DATA
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STZT2222 STZT2222A
V
V
V
P
T
Collector-Base Voltage (IE = 0) 60 75 V
CBO
Collector-Emitter Voltage (IB = 0) 30 40 V
CEO
Emitter-Base Voltage (IC = 0) 5 6 V
EBO
Collector Current 0.8 A
I
C
Total Dissipation at Tc = 25 oC 1.5 W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
October 1995
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STZT2222/STZT2222A
THERMAL DATA
R
R
• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
thj-amb
thj-tab
•
Thermal Resistance Junction-Ambient Max
•
Thermal Resistance Junction-Collecor Tab Max
83.3
10
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEX
I
BEX
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
h
FE
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (V
= -3V)
BE
Base Cut-off Current
(V
= -3V)
BE
Emitter Cut-off Current
(I
= 0)
E
= rated V
V
CB
VCB = rated V
= 60 V for STZT2222A 10 nA
V
CE
= 60 V for STZT2222A 20 nA
V
CE
= 3 V
V
EB
CBO
CBO
T
amb
for STZT2222
for STZT2222A
Collector-Base
Breakdown Voltage
(IE = 0)
∗ Collector-Emitter
Breakdown Voltage
(I
= 0)
B
Emitter-Base
Breakdown Voltage
(I
= 0)
C
∗ Collector-Emitter
Saturation Voltage
I
= 10 µA
C
for STZT2222
for STZT2222A
I
= 10 mA
C
for STZT2222
for STZT2222A
I
= 10 µA
E
for STZT2222
for STZT2222
IC = 150 mA IB = 15 mA
for STZT2222
for STZT2222A
I
= 500 mA IB = 50 mA
C
for STZT2222
for STZT2222A
∗ Base-Emitter
Saturation Voltage
IC = 150 mA IB = 15 mA
for STZT2222
for STZT2222A
I
= 500 mA IB = 50 mA
C
for STZT2222
for STZT2222A
∗ DC Current Gain IC = 0.1 mA VCE = 10 V
I
= 1 mA VCE = 10 V
C
I
= 10 mA VCE = 10 V
C
I
= 150 mA VCE = 10 V
C
I
= 150 mA VCE = 1 V
C
I
= 500 mA VCE = 10 V
C
for STZT2222
for STZT2222A
I
= 10 mA VCE = 10 V Tc = -55 oC
C
for STZT2222
= 125 oC
60
75
30
40
5
6
35
50
75
100
50
30
40
35
0.6
10
10
30
15
0.4
0.3
1.6
1
1.3
1.2
2.6
2
300
nA
µA
nA
nA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
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