SGS Thomson Microelectronics STY25NA60 Datasheet
STY25NA60
N - CHANNEL 600V - 0.225Ω - 25 A - Max247
EXSTREMELY LOW GATE CHARGE POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST Y25NA60 600 V < 0.24 Ω 25 A
■ TYPICALR
■ EFFICIENTANDRELIABLEMOUNTING
DS(on)
= 0.225 Ω
THROUGHCLIP
■ ± 30VGATETO SOURCEVOLTAGERATING
■ 100%AVALANCHETESTED
■ LOW INTRINSICCAPACITANCE
■ GATECHARGE MINIMIZED
■ REDUCEDVOLTAGESPREAD
DESCRIPTION
The Max247 package is a new high volume
powerpackage exibitingthe same footprintas the
industry standard TO-247, but designed to accomodate much larger silicon chips, normally suppliedin biggerpackages such as TO-264.Theincreaseddie capacity makes the deviceidealto reduce component count in multiple paralleled designsand save board space with respectto larger
packages.
APPLICATIONS
■ HIGHCURRENT, HIGH SPEED SWITCHING
■ SWITCHMODE POWER SUPPLY (SMPS)
■ DC-AC CONVERTERFOR WELDING
EQUIPMENTAND UNINTERRUPTABLE
POWERSUPPLY AND MOTORDRIVE
3
2
1
Max247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
T
(•) Pulse width limitedby safeoperating area
March 1999
Drain-source Volta ge (VGS=0) 600 V
DS
Drain- gate Voltage (RGS=20kΩ)
DGR
Gat e-source V oltage ± 30 V
GS
I
Drain Curre nt (cont in uous) at Tc=25oC25A
D
I
Drain Curre nt (cont in uous) at Tc= 100oC 16.5 A
D
600 V
(•) Drain Current (pulsed) 100 A
Tot al Dissipation at Tc=25oC300W
tot
Derating F act or 2.4 W/
Sto rage Tem peratu r e -55 to 150
stg
T
Max. Operati ng J unction Temperatu r e 150
j
o
C
o
C
o
C
1/8
STY25NA60
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
AVALANCHE CHARACTERISTICS
Symbol Para meter Max Val ue Uni t
I
AR
E
Ther mal Resistanc e Juncti on-case Max
Ther mal Resistanc e Juncti on-amb ient Max
Thermal Resistance Case-Heatsink Typ
with Cond uctive Greas e
Avalanche Cu r rent, Repetit ive or Not- Re petit ive
(pulse width limited by T
Single Pulse Avalanche En ergy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
0.42
40
0.05
25 A
3000 mJ
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-sou rc e
=250µAVGS=0
I
D
600 V
Break d own Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- b ody Le akage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
= Max Rating Tc=125oC
V
DS
= ± 30 V
V
GS
50
500
± 100 nA
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
DS=VGSID
= 250 µ A
345V
Voltage
R
DS(on)
Static Drain-source On
VGS=10V ID= 12 . 5 A 0.225 0. 2 4
Resistance
I
D(on)
On State Drain Cur rent VDS>I
D(on)xRDS(on)max
25 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr anscond uctance
C
C
C
Input Capaci t an c e
iss
Out put Capacitance
oss
Reverse Transf er
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
= 12.5 A 20 S
VDS=25V f=1MHz VGS= 0 6200
690
195
µA
µ
Ω
pF
pF
pF
A
2/8
STY25NA60
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay Time
t
Rise Time
r
VDD= 300 V ID= 12.5 A
=4.7 Ω VGS=10V
R
G
45
70
(see te st circuit, fi gure 3)
Q
Q
Q
Total Gate Charge
g
Gat e- Sour ce Cha rge
gs
Gate-Drain Charge
gd
VDD= 480 V ID=25A VGS=10V 240
25
115
315 nC
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off -voltage Rise T ime
Fall Time
f
Cross-over Ti m e
c
VDD= 480 V ID=25A
=4.7 Ω VGS=10V
R
G
(see te st circuit, fi gure 5)
70
25
105
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
V
I
SDM
SD
Q
I
RRM
SD
t
Source-drain Curr ent
(•)
Source-drain Curr ent
25
100
(pulsed)
(∗) For ward On Volt age ISD=25A VGS=0 2 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
=25A di/dt=100A/µs
I
SD
= 100 V Tj=150oC
V
DD
(see te st circuit, fi gure 5)
840
19.5
Charge
Reverse Recovery
46.5
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
(∗) Pulsed:Pulse duration = 300 µs, duty cycle 1.5%
(•) Pulse width limited by safeoperatingarea
SafeOperating Area ThermalImpedance
3/8
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