SGS Thomson Microelectronics STY15NA100 Datasheet
N - CHANNEL 1000V - 0.65 Ω - 15A - Max247
TYPE V
DSS
STY15NA100 1000 V < 0.77 Ω 15 A
R
DS(on)
I
D
STY15NA100
MOSFET
PRELIMINARY DATA
■ TYPICAL R
■ EFFICIENT AND RELIABLE MOUNTING
DS(on)
= 0.65 Ω
THROUGH CLIP
■ ± 30V GATE TO SOURCE VOLTA GE RATING
■ REPETITIVE AVA LANCHE TES TED
■ LOW INTRINSIC CAPACITANCE
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ REDUCED THRESHOLD VO LTA GE SPREA D
DESCRIPTION
The Max247
TM
package is a new high volume
power package exibiting the same footprint as the
industry standard TO-247, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages such as TO-264. The
increased die capacity makes the device ideal to
reduce component count in multiple paralleled
designs and save board space with respect to
larger packages.
APPLICATIONS
■ HIGH CURRENT, HIGH SPE ED SWI TCHING
■ SWITC H MODE POWER SU PPLIES ( SMPS)
■ DC-AC CONVE RTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SU PP LIE S (UPS)
3
2
1
Max247
TM
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
IDM(•) Drain Current (pulsed) 60 A
P
T
(•) Pulse width limited by safe operating area
April 1998
Drain-source Voltage (VGS = 0) 1000 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc = 25 oC15A
D
I
Drain Current (continuous) at Tc = 100 oC 9.5 A
D
Total Dissipation at Tc = 25 oC 300 W
tot
Derating Factor 2.4 W/oC
Storage Temperature -55 to 150
stg
T
Max. Operating Junction Temperature 150
j
1000 V
o
C
o
C
1/5
STY15NA100
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-si n k
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-Heatsink Typ
with Conductive Grease
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
max
j
DD
= 50 V)
0.42
40
0.05
15 A
3000 mJ
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
1000 V
= 0
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating x 0.8 Tc = 125 oC
DS
V
= ± 30 V
GS
50
500
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
2.25 3 3.75 V
Voltage
R
DS(on)
Static Drain-source On
VGS = 10 V ID = 7.5 A 0.65 0.77 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
15 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗) Forward
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 7.5 A 12 S
= 0 7000
GS
600
150
µA
µA
Ω
pF
pF
pF
2/5
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