SGS Thomson Microelectronics STX93003 Datasheet
STX93003
HIGH VOLTAGE FAS T-SWITCHING
PNP POWER TRANSISTOR
■ ST93003 SILICON IN TO-92 PACKAGE
■ MEDIUM VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNA M IC PARA ME TERS
■ MINIMUM LO T- TO - LOT SPREAD F O R
RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
APPLICATIONS:
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STX93003 is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the STX83003, its
complementary NPN transistor.
®
INTER NAL SCH E M ATI C DIAG RA M
October 2002
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (VBE = 0) -500 V
V
CEO
Collector-Emitter Voltage (IB = 0) -400 V
V
EBO
Emitter-Base Voltage (IC = 0)
(IC = 0, IB = -0.5 A, tp < 10µs, Tj < 150oC)
V
(BR)EBO
V
I
C
Collector Current -1 A
I
CM
Collector Peak Current (tp < 5 ms) -3 A
I
B
Base Current -0.5 A
I
BM
Base Peak Current (tp < 5 ms) -1.5 A
P
tot
Total Dissipation at TC = 25 oC 1.5 W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
TO-92
1/7
THERMAL DATA
R
thj-case
R
thj-Amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
83.3
200
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= -500V
V
CE
= -500V T
j
= 125oC
-1
-5
mA
mA
V
(BR)EBO
Emitter Base
Breakdown Voltage
(I
C
= 0)
I
E
= -10 mA -5 -10 V
V
CEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= -10 mA
L = 25 mH
-400 V
V
CE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = -0.5 A IB = -0.1 A
I
C
= -0.35 A IB = -50 mA
-0.5
-0.5
V
V
V
BE(sat)
∗ Base-Emitter
Saturation Voltage
IC = -0.5 A IB = -0.1 A -1 V
h
FE
∗ DC Current Gain IC = -10 mA V
CE
= -5 V
I
C
= -0.35 A V
CE
= -5 V
I
C
= -1 A V
CE
= -5 V
10
16
4
25 32
t
r
t
s
t
f
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
I
C
= -0.35 A VCC = 125 V
I
B1
= -70 mA IB2 = 70 mA
T
p
≥ 25 µs (see Figure 2)
1.5
90
2.2
0.1
2.9
ns
µs
µs
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
IC = -0.5 A IB1 = -0.1 A
V
BE(off)
= 5 V L = 10 mH
V
clamp
= 300 V (see Figure 1)
400
40
ns
ns
E
sb
Avalanche Energy L = 4 mH C = 1.8 nF
I
BR
≤ 2.5 A 25oC < TC < 125oC
12 mJ
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %.
STX93003
2/7
Safe Operating Are a
DC Current Gain
Collector Emitter Saturation Voltage
Derating Curve
DC Current Gain
Base Emitter Sat uration Volt ag e
STX93003
3/7
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