SGS Thomson Microelectronics STX817 Datasheet
®
PNP MEDIUM POWER TRANSISTOR
Type Marking
STX817 X817
■ DEVICE SUIT AB LE FO R THRO UG H- HO LE
PCB ASSEMBLY
APPLICATIONS
■ VOLTAGE REGULATION
■ RELAY DRIVER
■ GENERIC SWITCH
DECRIPTION
The STX817 is a PNP transistor manufactured
using Planar Technology resulting in rugged high
performance devices.
STX817
TO-92
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-Base Voltage (IE = 0) -120 V
CBO
Collector-Emitter Voltage (IB = 0) -80 V
CEO
Emitter-Base Voltage (IC = 0) -5 V
EBO
Collector Current -1.5 A
I
C
Collector Peak Current (tp < 5 ms) -2 A
CM
Base Current -0.3 A
I
B
Base Peak Current (tp < 5 ms) -0.6 A
BM
Total Dissipation at T
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
= 25 oC 0.9 W
amb
o
C
o
C
April 2002
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STX817
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
44.6
139
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= -120 V -500 µA
V
CE
= -80 V -1 mA
V
CE
= -5 V -100 µA
V
EB
I
= -10 mA -80 V
C
Sustaining Voltage
(I
= 0)
B
V
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
∗ Collector-Emitter
CE(sat)
Saturation Voltage
∗ Base-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = -100 mA VCE = -2 V
FE
f
Transition Frequency IC = -0.1 A VCE = -10 V 50 MHz
T
IC = -100 mA IB = -10 mA
I
= -1 A IB = -100 mA
C
IC = -100 mA IB = -10 mA
I
= -1 A IB = -100 mA
C
I
= -500 mA VCE = -2 V
C
I
= -1 A VCE = -2 V
C
-0.25
-0.5
-1
-1.1
140
80
40
V
V
V
V
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