SGS Thomson Microelectronics STX13003 Datasheet
STX13003
HIGH VOLTAGE FAS T-SWITCHING
NPN POWER TRANSISTOR
■ ST13003 SILICON IN TO-92 PACKAGE
■ MEDIUM VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNA M IC PARA ME TERS
■ MINIMUM LO T- TO - LOT SPREAD F O R
RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
APPLICATIONS:
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STX13003 is designed for use in compact
fluorescent lamp application.
®
INTER NAL SCH E M ATI C DIAG RA M
April 2003
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (VBE = 0) 700 V
V
CEO
Collector-Emitter Voltage (IB = 0) 400 V
V
EBO
Emitter-Base Voltage
(I
C
= 0, IB = 0.5 A, tp < 10µs, Tj < 150oC)
V
(BR)EBO
V
I
C
Collector Current 1 A
I
CM
Collector Peak Current (tp < 5 ms) 3 A
I
B
Base Current 0.5 A
I
BM
Base Peak Current (tp < 5 ms) 1.5 A
P
tot
Total Dissipation at TC = 25 oC 1.5 W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
TO-92
1/7
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 83.3
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEV
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
= 700V
V
CE
= 700V T
j
= 125oC
1
5
mA
mA
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= 10 mA 9 18 V
V
CEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 10 mA
L = 25 mH
400 V
V
CE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 0.5 A IB = 0.1 A
I
C
= 1 A IB = 0.25 A
I
C
= 1.5 A IB = 0.5 A
0.5
1
3
V
V
V
V
BE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 0.5 A IB = 0.1 A
I
C
= 1 A IB = 0.25 A
1
1.2
V
V
hFE∗ DC Current Gain IC = 0.5 A V
CE
= 2 V
I
C
= 1 A V
CE
= 2 V
8
5
35
25
t
r
t
s
t
f
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
I
C
= 1 A VCC = 125 V
I
B1
= 0.2 A IB2 = -0.2 A
T
p
= 25 µs
1
4
0.7
µs
µs
µs
t
s
INDUCTIVE LOAD
Storage Time
IC = 1 A IB1 = 0.2 A
V
BE
= -5 V L = 50 mH
V
clamp
= 300 V
0.8 µs
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %.
Safe Operating Are a Output Characteristics
STX13003
2/7
Reverse B iased SOA
DC Current Gain
Collector Emitter Saturation Voltage
Derating Curve
DC Current Gain
Base Emitter Sat uration Volt ag e
STX13003
3/7
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