SGS Thomson Microelectronics STX112 Datasheet
®
■ MONOLI THIC D A RLING TO N
CONFIGU R ATIO N
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The device is a silicon Epitaxial-Base NPN
transistor in monolithic Darlington configuration
mounted in TO-92 plastic package. It is intented
for use in linear and switching applications.
Ordering codes:
STX112 (shipment in bulk)
STX112-AP (shipment in ammopack)
STX112
SILICON NPN POWER
DARLINGTON TRANSISTOR
TO-92
INTER NAL SCH E M ATI C DIAG RA M
R1 Typ.= 7K Ω R2 Typ.= 230
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
October 2000
Collector-Base Voltage (IE = 0) 100 V
CBO
Collector-Emitter Voltage (IB = 0) 100 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 2 A
I
C
Collector Peak Current 4 A
CM
Base Current 50 mA
I
B
Total Dissipation at T
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
= 25 oC 1.2 W
amb
o
C
o
C
1/5
STX112
THERMAL DATA
R
thj-amb
Thermal Resistance Junction-ambient Max 104
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEO
I
CBO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
B
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 50 V 2 mA
V
CE
= 100 V 1 mA
V
CB
= 5 V 2 mA
V
EB
I
= 30 mA 100 V
C
Sustaining Voltage
(I
= 0)
B
∗ Collector-Emitter
V
CE(sat)
IC = 2 A IB = 8 mA 2.5 V
Saturation Voltage
∗ Base-Emitter Voltage IC = 2 A VCE = 4 V 2.8 V
V
BE
hFE∗ DC Current Gain IC = 1 A VCE = 4 V
I
= 2 A VCE = 4 V
C
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
1000
500
Safe Operating Are a Derating Curve
2/5
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