SGS Thomson Microelectronics STW8NB90 Datasheet
STW8NB90
N - CHANNEL 900V - 1.1Ω - 8A - TO-247
PowerMESH MOSFET
PRELIMINARY DATA
TYPE V
DSS
R
DS(on)
I
D
STW8NB90 900 V < 1.45 Ω 8 A
■
TYPICAL R
■
EXTREMELY HIGH dv/dt CAPABILITY
■
100% AVALANCHE TESTED
■
VERY LOW INTRINSIC CAPACITANCES
■
GATE CHARGE MINIMIZED
DS(on)
= 1.1
Ω
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
per area, exceptional avalanche
DS(on)
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■
SWITCH MODE POWER SUPPLIES (SMPS)
■
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTI BLE
POWER SUPPLIES AND MOTOR DRIVE
■
HIGH CURRENT, HIGH SPEED SWITCH ING
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt (
T
(•) Pulse width limited by safe operating area (1) ISD
December 1998
Drain-source Voltage (VGS = 0) 900 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc = 25 oC8A
D
I
Drain Current (continuous) at Tc = 100 oC5A
D
900 V
(•) Drain Current (pulsed) 32 A
Total Dissipation at Tc = 25 oC 190 W
tot
Derating Factor 1.52 W/
) Peak Diode Recovery voltage slope 4 V/ns
1
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
≤ 8 Α, ≤
200 A/µs, VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX
o
C
o
C
o
C
1/5
STW8NB90
THERMAL DATA
R
thj-case
Rthj-am b
R
thc-sink
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERIST ICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive 8 A
0.66
30
0.1
300
o
C/W
oC/W
o
C/W
o
C
E
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
ELECTRICAL CHARACTERISTICS
= 50 V)
DD
= 25 oC unless otherwise specified)
(T
case
700 mJ
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
900 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 100 oC
DS
V
= ± 30 V
GS
1
50
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold
V
= VGS ID = 250 µA
DS
Voltage
Static Drain-source On
VGS = 10V ID = 4 A 1.1 1.45 Ω
Resistance
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
345V
8A
µA
µA
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
C
iss
C
oss
C
rss
2/5
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 4 A 1.5 8 S
23
2865
305
31
= 0 2120
GS
225
pF
pF
pF
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