SGS Thomson Microelectronics STW8NB100 Datasheet
®
N - CHANNEL 1000V - 1.2Ω - 8A - TO-247
TYPE V
DSS
STW8NB100 1000 V < 1.5 Ω 8 A
■
TYPICAL R
■
EXTREMELY HIGH dv/dt CAPABILITY
■
30V GATE TO SOURCE VOLTAGE RATING
±
■
100% AVALANCHE TESTED
■
LOW INTRINSIC CAPACITANCE
■
GATE CHARGE MINIMIZED
■
REDUCED VOLTAGE SPREAD
DS(on)
= 1.2
R
DS(on)
Ω
STW8NB100
PowerMESH MOSFET
PRELIMINARY DATA
I
D
3
2
1
DESCRIPTION
Using the latest high voltage MESH OVERLAY
TO-247
process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending st rip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
INTERNAL SCHEMATIC DIAGRAM
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCH ING
■
SWITCH MODE POWER SUPPLY (SMPS)
■
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTA BLE
POWER SUPPLY AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt
T
(•) Pulse width limited by safe operating area (1) ISD
March 1999
Drain-source Voltage (VGS = 0) 1000 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc = 25 oC8A
D
I
Drain Current (continuous) at Tc = 100 oC5A
D
1000 V
(•) Drain Current (pulsed) 32 A
Total Dissipation at Tc = 25 oC 190 W
tot
Derating Factor 1.52 W/
Peak Diode Recovery voltage slope 4 V/ns
(1)
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
≤8 Α,
di/dt ≤ 200 A/µs, VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX
o
C
o
C
o
C
1/5
STW8NB100
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERIST ICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
max)
j
DD
= 50 V)
0.66
30
0.1
300
8A
600 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
1000 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125
DS
o
C
V
= ± 30 V
GS
1
50
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
345V
Voltage
R
DS(on)
Static Drain-source On
VGS = 10 V ID = 4 A 1.2 1.5 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
8A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 4 A 8.9 S
= 0 2900
GS
275
27
µA
µA
pF
pF
pF
2/5
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