SGS Thomson Microelectronics STW80NF55-08 Datasheet
STW80NF55-08
N-CHANNEL 55V - 0.0065Ω - 80A TO-247
STripFET™ POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
STW80NF55-08 55 V < 0.008 Ω 80 A
■ TYPICAL R
■ EXCEPTIONA L dv/dt CAPABILI TY
■ 100% AVALANCHE TESTED
■ LOW THRESHOLD DRIVE
(on) = 0.0065Ω
DS
DESCRIPTION
This Power MOSFET is t he latest development of
STMicroelectronics unique "Single Feature Size™"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resistance, rugged avalanche charac teristics and less
critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
■ DC-AC & DC-DC CONVERTERS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
(*) Drain Current (continuous) at TC = 25°C
D
I
D
I
DM
P
TOT
E
AS
T
stg
T
j
(●) Pulse width limited by safe operating area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
55 V
55 V
Gate- source Voltage ±20 V
80 A
Drain Current (continuous) at TC = 100°C
(l)
Drain Current (pulsed) 320 A
Total Dissipation at TC = 25°C
80 A
300 W
Derating Factor 2 W/°C
(1)
Single Pulse Avalanche Energy 870 mJ
Storage Temperature –65 to 175 °C
Max. Operating Junction Temperature 175 °C
(1) Starting Tj = 25°C, ID = 40A, VDD = 40V
(*) Curren t Li m i ted by wire bonding
1/8September 2002
STW80NF55-08
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300 °C
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID = 250 µA, VGS = 0 55 V
Breakdown Voltage
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±20V ±100 nA
GS
1µA
10 µA
ON
I
I
GSS
(1)
DSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS, ID = 250µA
DS
VGS = 10V, ID = 40 A
234V
0.0065 0.008 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > 2.5 V, ID=18 A 20 S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 800 pF
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, VGS = 0
DS
3850 pF
250 pF
2/8
STW80NF55-08
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 85 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
d(off)
t
f
t
f
t
c
Turn-off-Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (2)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c ycle 1.5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current 80 A
(1)
Source-drain Current (pulsed) 320 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 27V, ID = 40A
DD
R
= 4.7Ω VGS = 10V
G
(see test circuit, Figure 3)
VDD = 80V, ID = 80A,
VGS = 10V
VDD = 27V, ID = 40A,
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 3)
GS
=80A
D
= 10V
Vclamp =44V, I
R
=4.7Ω, V
G
(see test circuit, Figure 5)
ISD = 80A, VGS = 0
= 80A, di/dt = 100A/µs,
I
SD
VDD = 50V, Tj = 150°C
(see test circuit, Figure 5)
25 ns
115
150
24
46
70
25
85
75
110
1.5 V
80
250
6.4
nC
nC
nC
ns
ns
ns
ns
ns
ns
nC
A
Ther m al Impeda n c eSafe Operating Area
3/8
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