STW80NF55-06
N-CHANNEL 55V - 0.005Ω - 80A TO-247
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE V
DSS
R
DS(on)
I
D
STW80NF55-06 55 V < 0.0065 Ω 80 A
■ TYPICAL R
■ EXCEPTIONA L dv/dt CAPABILI TY
■ 100% AVALANCHE TESTED
(on) = 0.005Ω
DS
DESCRIPTION
This Power MOSFET is t he latest development of
STMicroelectronics unique "Single Feature Size™"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resistance, rugged avalanche charac teristics and less
critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
■ DC-AC & DC-DC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
(*) Drain Current (continuos) at TC = 25°C
D
I
D
I
DM
P
TOT
E
AS
T
stg
T
j
(●) Pulse width limited by safe operating area
October 2001
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
55 V
55 V
Gate- source Voltage ±20 V
80 A
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 320 A
Total Dissipation at TC = 25°C
80 A
300 W
Derating Factor 2 W/°C
(1)
Single Pulse Avalanche Energy 1 J
Storage Temperature
Max. Operating Junction Temperature
(1) Starting Tj = 25°C, ID = 40A, VDD = 40V
(*) Curren t Li m i ted by wire bonding
– 55 to 175 °C
1/6
STW80NF55-06
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Maximum Lead Temperature For Soldering Purpose 300 °C
Drain-source
ID = 250 µA, VGS = 0 55 V
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
V
= Max Rating
DS
VDS = Max Rating, TC = 125 °C
V
= ±20V ±100 nA
GS
V
= VGS, ID = 250µA
DS
VGS = 10V, ID = 40 A
234V
0.005 0.0065 Ω
1µA
10 µA
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > 15 V, ID = 40 A 50 S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 980 pF
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, VGS = 0
DS
7300 pF
250 pF
2/6
STW80NF55-06
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 240 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
t
d(off)
t
r(Voff)
t
t
f
f
c
Turn-off-Delay Time
Fall Time
Off-voltage Rise Time
Off-voltage Rise Time
Fall Time
Cross-over Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c yc l e 1.5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current 80 A
(2)
Source-drain Current (pulsed) 320 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 27.5 V, ID = 40A
DD
R
= 4.7Ω VGS = 10V
G
(see test circuit, Figure 3)
VDD = 44 V, ID = 80 A,
VGS = 10 V
VDD = 27.5 V, ID = 40A,
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 3)
GS
=80A
D
= 10V
Vclamp = 44 V, I
RG=4.7Ω, V
(see test circuit, Figure 5)
ISD = 80A, VGS = 0
= 80 A, di/dt = 100A/µs,
I
SD
VDD = 20V, Tj = 150°C
(see test circuit, Figure 5)
40 ns
190
230
40
65
260
75
70
185
240
110
1.5 V
90
0.295
6.5
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
µC
A
3/6
STW80NF55-06
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
4/6
TO-247 MECHANICAL DATA
STW80NF55-06
DIM.
A 4.85 5.15 0.19 0.20
D 2.20 2.60 0.08 0.10
E 0.40 0.80 0.015 0.03
F 1 1.40 0.04 0.05
F1 3 0.11
F2 2 0.07
F3 2 2.40 0.07 0.09
F4 3 3.40 0.11 0.13
G 10.90 0.43
H 15.45 15.75 0.60 0.62
L 19.85 20.15 0.78 0.79
L1 3.70 4.30 0.14 0.17
L2 18.50 0.72
L3 14.20 14.80 0.56 0.58
L4 34.60 1.36
L5 5.50 0.21
M 2 3 0.07 0.11
V
V2
Dia 3.55 3.65 0.14 0.143
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
5º5º
60º 60º
5/6
STW80NF55-06
6/6
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of use of such informa tion n or for an y infring ement of patent s or other rig hts of third part ies which may resu lt from its use . No l i cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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