SGS Thomson Microelectronics STW80NF55-06 Datasheet
STW80NF55-06
N-CHANNEL 55V - 0.005Ω - 80A TO-247
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE V
DSS
R
DS(on)
I
D
STW80NF55-06 55 V < 0.0065 Ω 80 A
■ TYPICAL R
■ EXCEPTIONA L dv/dt CAPABILI TY
■ 100% AVALANCHE TESTED
(on) = 0.005Ω
DS
DESCRIPTION
This Power MOSFET is t he latest development of
STMicroelectronics unique "Single Feature Size™"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resistance, rugged avalanche charac teristics and less
critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
■ DC-AC & DC-DC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
(*) Drain Current (continuos) at TC = 25°C
D
I
D
I
DM
P
TOT
E
AS
T
stg
T
j
(●) Pulse width limited by safe operating area
October 2001
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
55 V
55 V
Gate- source Voltage ±20 V
80 A
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 320 A
Total Dissipation at TC = 25°C
80 A
300 W
Derating Factor 2 W/°C
(1)
Single Pulse Avalanche Energy 1 J
Storage Temperature
Max. Operating Junction Temperature
(1) Starting Tj = 25°C, ID = 40A, VDD = 40V
(*) Curren t Li m i ted by wire bonding
– 55 to 175 °C
1/6
STW80NF55-06
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Maximum Lead Temperature For Soldering Purpose 300 °C
Drain-source
ID = 250 µA, VGS = 0 55 V
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
V
= Max Rating
DS
VDS = Max Rating, TC = 125 °C
V
= ±20V ±100 nA
GS
V
= VGS, ID = 250µA
DS
VGS = 10V, ID = 40 A
234V
0.005 0.0065 Ω
1µA
10 µA
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > 15 V, ID = 40 A 50 S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 980 pF
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, VGS = 0
DS
7300 pF
250 pF
2/6
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