Datasheet STW80NF12, STP80NF12FP, STP80NF12, STB80NF12 Datasheet (SGS Thomson Microelectronics)

1/12March 2003
STB80NF12 STW80NF12
STP80NF12 STP80NF12FP
N-CHANNEL 120V-0.013Ω-80A TO-220/TO-247/TO-2 20FP/D²PAK
STripFET™ II POWER MOSFET
DS
(on) = 0.013
EXCEPTIONAL dv /d t CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
SURFACE-MOUNTING D
²
PAK (TO-263)
POWER PACKAG E IN TU BE (NO SU FFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high­efficiency, high-frequency isolate d DC-DC c onverters for Telecom and Computer a pplications. It is also intended for any applications with low gate drive requirements.
APPLICATIONS
HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL
TYPE
V
DSS
R
DS(on)
I
D
STB80NF12 STP80NF12 STP80NF12FP STW80NF12
120 V 120 V 120 V 120 V
<0.018
<0.018
<0.018
<0.018
80 A(*) 80 A(*) 80 A(*) 80 A(*)
1
2
3
1
3
1
2
3
TO-220
D²PAK
TO-263
(Suffix “T4”)
TO-220FP
TO-247
ABSOLUTE MAXIMUM RATINGS
(
•)
Pulse widt h l i m i ted by safe operating area.
(*) Limited by Package (2) I
SD
≤35A, di/dt ≤300A/ µ s , VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX.
(#) Refer to SOA for the max allovable currente values on FP-type due to thermal resistance value. (1) Starting T
j
= 25 oC, ID = 40A, VDD = 45V
Symbol Parameter Value Unit
STB_P_W80NF12 STP80NF12FP
V
DS
Drain-source Voltage (VGS = 0)
120 V
V
DGR
Drain-gate Voltage (RGS = 20 kΩ)
120 V
V
GS
Gate- source Voltage ± 20 V
I
D
(*) Drain Current (continuous) at TC = 25°C
80 80(#) A
I
D
Drain Current (continuous) at TC = 100°C
60 60(#) A
I
DM
(
•)
Drain Current (pulsed) 320 320(#) A
P
tot
Total Dissipation at TC = 25°C
300 45 W
Derating Factor 2.0 0.3 W/°C
dv/dt
(1)
Peak Diode Recovery voltage slope 10 V/ns
E
AS
(2)
Single Pulse Avalanche Energy 700 mJ
V
ISO
Insulation Withstand Voltage (DC) ------ 2500 V
T
stg
Storage Temperature
-55 to 175 °C
T
j
Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
2/12
THERMA L D ATA
ELECTRICAL CHARACTERISTICS (T
case
= 25 °C unless otherwise specified)
OFF
ON
(1)
DYNAMIC
TO-247
D
2
PAK
TO-220
TO-220FP
Rthj-case Thermal Resistance Junction-case Max 0.5 0.5 3.33 °C/W
Rthj-amb
T
l
Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose
Max 50
300
62.5 300
62.5 300
°C/W
°C
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source Breakdown Voltage
I
D
= 250 µA, VGS = 0
120 V
I
DSS
Zero Gate Voltage Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating TC = 125°C
1
10
µA µA
I
GSS
Gate-body Leakage Current (V
DS
= 0)
V
GS
= ± 20V
±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= VGS I
D
= 250 µA
2V
R
DS(on)
Static Drain-source On Resistance
V
GS
= 10 V ID = 40 A
0.013 0.018
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(*)
Forward Transconductance
V
DS
= 15 V ID = 40 A
80 S
C
iss
C
oss
C
rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
V
DS
= 25V f = 1 MHz VGS = 0
4300
600 230
pF pF pF
3/12
STB80NF12 STW80NF12 STP80N F12 STP80NF12FP
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by saf e operating area.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Delay Time Rise Time
V
DD
= 50 V ID = 40 A
R
G
= 4.7 Ω VGS = 10 V
(Resistive Load, Figure 3)
40
145
ns ns
Q
g
Q
gs
Q
gd
Total Gate Charge Gate-Source Charge Gate-Drain Charge
V
DD
= 80 V ID= 80 A VGS= 10V
140
23 51
189 nC
nC nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off Delay Time Fall Time
V
DD
= 50 V ID = 40 A
R
G
= 4.7Ω, V
GS
= 10 V
(Resistive Load, Figure 3)
134 115
ns ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
(•)
Source-drain Current Source-drain Current (pulsed)
80
320
A A
V
SD
(*)
Forward On Voltage
I
SD
= 80 A VGS = 0
1.3 V
t
rr
Q
rr
I
RRM
Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current
I
SD
= 80 A di/dt = 100A/µs
V
DD
= 35 V Tj = 150°C
(see test circuit, Figure 5)
155
0.85 11
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area Safe Operating Area for TO-220FP
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
4/12
Thermal Impedance Thermal Impedance for TO-220FP
Output Characteristics Transfer Characteristics
Transconductance Static Drain-source On Resistance
5/12
STB80NF12 STW80NF12 STP80N F12 STP80NF12FP
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
6/12
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/12
STB80NF12 STW80NF12 STP80N F12 STP80NF12FP
DIM.
mm. inch.
MIN. TYP. MAX. MIN. TYP. TYP.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098
0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.028 0.037
B2 1.14 1.7 0.045 0.067
C 0.45 0.6 0.018 0.024
C2 1.21 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.394 0.409
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.069
M 2.4 3.2 0.094 0.126
R 0.4 0.016
V2
D²PA K MECHANICAL DATA
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
8/12
DIM.
mm. inch.
MIN. TYP. MAX. MIN. TYP. TYP.
A 4.4 4.6 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409
L2 16.40 0.645 L3 28.90 1.137 L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154
DIA 3.75 3.85 0.147 0.151
TO-220 MECHANICAL DATA
9/12
STB80NF12 STW80NF12 STP80N F12 STP80NF12FP
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
123
F2
F1
L7
L4
TO-220FP MECHANICAL DAT A
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
10/12
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134
G 10.9 0.429 H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.582 L4 34.6 1.362 L5 5.5 0.217
M 2 3 0.079 0.118
P025P
TO-247 MECHANICAL DATA
11/12
STB80NF12 STW80NF12 STP80N F12 STP80NF12FP
DIM.
mm inch
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082
R50 1.574
T0.25 0.35 .0.0098 0.0137
W 23.7 24.3 0.933 0.956
DIM.
mm inch
MIN. MAX. MIN. MAX.
A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 24.4 26.4 0.960 1.039 N 100 3.937
T 30.4 1.197
BASE QTY BULK QTY
1000 1000
REEL MECHANICAL DATA
* on sales type
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
D2PAK FOOTPRINT
TAPE MECHANICAL DATA
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
12/12
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