SGS Thomson Microelectronics STW80NE06-10 Datasheet
STW80NE06-10
N - CHANNEL 60V - 0.0085Ω - 80A - TO-247
STripFET ” POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
STW80NE06 -1 0 60 V <0. 01 Ω 80 A
■ TYPICALR
■ EXCEPTIONALdv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ APPLICATIONORIENTED
DS(on)
=0.0085 Ω
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is thelatestdevelopment of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
■ SOLENOIDANDRELAY DRIVERS
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ DC-DCCONVERTERS
■ AUTOMOTIVE ENVIRONMENT
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
V
V
V
I
DM
P
dv/ dt Peak Di ode Recovery voltage slope 7 V/ns
T
(•) Pulse width limitedby safe operating area (1)ISD≤ 80 A,di/dt ≤ 300 A/µs, VDD≤ V
July 1998
Drain-source V oltage (VGS=0) 60 V
DS
Drain- gate Voltage (RGS=20kΩ)
DGR
Gat e- source Voltage ± 20 V
GS
I
Drain Current ( continuous) at Tc=25oC80A
D
I
Drain Current ( continuous) at Tc=100oC57A
D
60 V
(•) Dr a in Current (pulsed) 320 A
Tot al D iss ip at i on at Tc=25oC200W
tot
Derating Factor 1.33 W/
Sto rage Temperature -65 to 175
stg
T
Max. O peratin g J u nc tion T e m perature 175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/8
STW80NE06-10
THERMAL DATA
R
thj-case
Rthj-a m b
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Value Unit
I
AR
E
Ther mal Resist ance Junction- case Max
Ther mal Resist ance Junction- ambient Max
Ther mal Resist ance Case-sink Ty p
Maximum Lea d Te mperat ure Fo r S oldering Purpos e
l
Avalanche Current , Repetit i v e or Not -R e petitive
(pulse width limited b y T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=30V)
j
max)
j
0.75
30
0.1
300
80 A
350 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
OFF
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
60 V
Breakdown Volt age
I
DSS
I
GSS
Zer o G at e Volt age
Drain Current ( V
GS
Gat e-body Le aka ge
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
= ± 20 V
V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
234V
Voltage
R
DS(on)
Stati c Drain-so urce On
VGS=10V ID=40A 8.5 10 mΩ
Resistance
I
D(on)
On St at e Dra in Cur rent VDS>I
D(on)xRDS(on)max
80 A
VGS=10V
DYNAMIC
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansconductance
C
C
C
Input Capacit an ce
iss
Out put Capacit ance
oss
Reverse T ransf er
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=40 A 19 38 S
VDS=25V f=1MHz VGS= 0 7600
890
150
10000
1100
200
µA
µA
pF
pF
pF
2/8
STW80NE06-10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Tim e
Rise T ime
VDD=30V ID=40A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 3)
Q
Q
Q
Total Gate Charge
g
Gat e-Sour ce Charge
gs
Gate-Drain Charge
gd
VDD=48V ID=80A VGS= 10 V 140
SWITCHINGOFF
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
t
r(Voff)
t
Of f - voltage Ris e T ime
t
Fall Time
f
Cross-ov er Time
c
VDD=48V ID=40A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) Fo r war d On Voltage ISD=80A VGS=0 1.5 V
Reverse Rec overy
rr
Time
Reverse Rec overy
rr
= 80 A di/dt = 10 0 A /µ s
I
SD
=30V Tj=150oC
V
DD
(see test circuit, figure 5)
Charge
Reverse Rec overy
Current
50
15065200
20
50
45
75
130
60
100
170
80
320
100
0.4
8
ns
ns
nC
nC
nC
ns
ns
ns
A
A
ns
µC
A
Safe Operating Area ThermalImpedance
3/8
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