SGS Thomson Microelectronics STW6NA90 Datasheet
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
DSS
STW6NA90 900 V < 1.9 Ω 6 A
■ TYPICAL R
■ ± 30V GATE TO SOURCE VOLTA GE
DS(on)
= 1.45 Ω
RANTING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVA LANCHE DATA AT 100
■ LOW INTRINSIC CAPACITANCE
■ GATE CHARGE MINIMIZED
■ REDUCED VOLTAGE SPRE AD
R
DS(on)
STW6NA90
PRELIMINARY DATA
I
D
o
C
3
2
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPE ED SWI TCHING
■ SWITCH MODE POWER SUPPLY (SMPS)
■ CONSUMER AND INDU STRI AL LIG HT ING
■ DC-AC CONVERTER FOR WELDING
TO-247
EQUIPMENT AND UNINTERRUPTABLE
POWER SU PP LY (UP S)
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
IDM(•) Drain Current (pulsed) 24 A
P
T
(•) Pulse width limited by safe operating area
Drain-source Voltage (VGS = 0) 900 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc = 25 oC6A
D
I
Drain Current (continuous) at Tc = 100 oC 3.8 A
D
Total Dissipation at Tc = 25 oC 160 W
tot
Derating Factor 1.28 W/
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
900 V
o
C
o
C
o
C
January 1998
1/5
STW6NA90
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-si n k
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
ma x, δ < 1%)
j
DD
= 25 V)
0.78
30
0.1
300
6A
600 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
900 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 100oC
DS
V
= ± 30 V
GS
25
250
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
2.25 3 3.75 V
Voltage
R
DS(on)
Static Drain-source On
VGS = 10 V ID = 3 A 1.45 1.9 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
6A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 3 A 5 6.6 S
50
2480
270
75
= 0 1760
GS
190
µA
µA
pF
pF
pF
2/5
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